STW18NK60Z N-Channel 600V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The STW18NK60Z is an N-Channel 600V 16A MOSFET manufactured by STMicroelectronics in the SuperMESH™ series. This device is rated for 230W power dissipation and is housed in a TO-247-3 through-hole package. The part is currently obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The STW18NK60Z serves in high-voltage switching applications requiring 600V drain-to-source voltage capability with moderate current handling at 16A continuous drain current.

Substiute Parts

STW18NK60Z
STMicroelectronicsIn Stock: 3452STW18NK60Z Datasheet
STW18NK60Z
Current Part
AOK20N60L
Alpha & Omega Semiconductor Inc.In Stock: 8108AOK20N60L Datasheet
AOK20N60L
Similar
APT24M80B
Microchip TechnologyIn Stock: 1157APT24M80B Datasheet
APT24M80B
Similar
IRFP21N60LPBF
Vishay SiliconixIn Stock: 2972IRFP21N60LPBF Datasheet
IRFP21N60LPBF
Similar
IRFPC60
Vishay SiliconixIn Stock: 1482IRFPC60 Datasheet
IRFPC60
Similar
IRFPC60LCPBF
Vishay SiliconixIn Stock: 1539IRFPC60LCPBF Datasheet
IRFPC60LCPBF
Similar
IRFPC60PBF
Vishay SiliconixIn Stock: 1326IRFPC60PBF Datasheet
IRFPC60PBF
Similar
IXFH18N60P
IXYSIn Stock: 5583IXFH18N60P Datasheet
IXFH18N60P
Similar
IXTH12N65X2
IXYSIn Stock: 1330IXTH12N65X2 Datasheet
IXTH12N65X2
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 16 A
Power Dissipation (Max) 230 W
Rds On (Max) @ 8A, 10V 360 mOhm
Gate Charge (Qg) @ 10V 170 nC
Input Capacitance (Ciss) @ 25V 3540 pF
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the STW18NK60Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id): Must equal or exceed 16A at 25°C
  • Package Type: Must be TO-247-3 or compatible TO-247 variant
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Operating Temperature Range: Must support -55°C to 150°C

Secondary Compatibility Parameters:

  • Gate Charge (Qg): Lower values indicate faster switching
  • On-State Resistance (Rds On): Lower values reduce conduction losses
  • Input Capacitance (Ciss): Affects gate drive requirements
  • Power Dissipation: Higher ratings provide design margin

Substitute parts are grouped into two categories: Direct Equivalents (matching 600V/16A specifications) and Enhanced Alternatives (higher voltage or current ratings that maintain backward compatibility).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Ciss (pF) Power Diss. (W) Package Status
STW18NK60Z STMicroelectronics 600 16 360 @ 8A 170 3540 230 TO-247-3 Obsolete
AOK20N60L Alpha & Omega Semiconductor 600 20 370 @ 10A 74 3680 417 TO-247-3 Obsolete
IRFP21N60LPBF Vishay Siliconix 600 21 320 @ 13A 150 4000 330 TO-247-3 Active
IRFPC60LCPBF Vishay Siliconix 600 16 400 @ 9.6A 120 3500 280 TO-247-3 Active
IRFPC60PBF Vishay Siliconix 600 16 400 @ 9.6A 210 3900 280 TO-247-3 Active
IXFH18N60P IXYS 600 18 400 @ 500mA 50 2500 360 TO-247-3 Active
APT24M80B Microchip Technology 800 25 390 @ 12A 150 4595 625 TO-247-3 Active
IXTH12N65X2 IXYS 650 12 300 @ 6A 17 1100 180 TO-247-3 Active

Engineering Selection Recommendations

Direct Equivalents (600V, 16A Class):

IRFPC60LCPBF and IRFPC60PBF are pin-compatible direct substitutes for the STW18NK60Z. Both are manufactured by Vishay Siliconix, maintain identical 600V/16A ratings, and are housed in TO-247-3 packages. IRFPC60LCPBF is ROHS3 compliant with lower gate charge (120 nC), while IRFPC60PBF offers ROHS3 compliance with standard gate charge (210 nC). Both parts are currently in active production status.

Enhanced Current Rating (600V, 20A+):

AOK20N60L (Alpha & Omega Semiconductor) and IRFP21N60LPBF (Vishay Siliconix) provide higher continuous drain current ratings (20A and 21A respectively) while maintaining 600V voltage rating. These parts offer improved thermal performance and design margin. IRFP21N60LPBF is currently active and ROHS3 compliant. AOK20N60L is obsolete but remains in inventory. Both are suitable for applications where higher current capacity is beneficial.

Enhanced Voltage Rating (800V, 25A):

APT24M80B (Microchip Technology, POWER MOS 8™ series) provides higher voltage (800V) and current (25A) ratings in an active product status. This part is suitable for designs requiring additional voltage margin or higher power dissipation capability (625W). The higher Vdss rating ensures compatibility with applications subject to voltage transients.

Lower Current Alternative (650V, 12A):

IXTH12N65X2 (IXYS, Ultra X2 series) offers a 650V rating with reduced current capability (12A). This part is not recommended as a direct substitute due to lower current rating but may be considered for applications with reduced current requirements.

Compliance and Availability:

IRFPC60LCPBF, IRFPC60PBF, IRFP21N60LPBF, IXFH18N60P, and APT24M80B are all ROHS3 compliant and currently in active production. These parts are preferred for new designs and ongoing production support. All substitute parts maintain the same operating temperature range (-55°C to 150°C) and through-hole TO-247-3 mounting configuration.

Frequently Asked Questions (FAQ)

Q: Can IRFPC60LCPBF directly replace STW18NK60Z in existing designs?

A: Yes. IRFPC60LCPBF is a direct pin-compatible substitute with identical 600V/16A ratings, TO-247-3 package, and operating temperature range. The lower gate charge (120 nC vs. 170 nC) may improve switching speed in gate-drive-limited applications.

Q: What is the difference between IRFPC60LCPBF and IRFPC60PBF?

A: Both parts are 600V/16A MOSFETs in TO-247-3 packages with identical electrical ratings. IRFPC60LCPBF features lower gate charge (120 nC) and input capacitance (3500 pF), while IRFPC60PBF has higher gate charge (210 nC) and input capacitance (3900 pF). Both are ROHS3 compliant and active products.

Q: Is IRFP21N60LPBF suitable as a substitute?

A: Yes. IRFP21N60LPBF maintains the 600V voltage rating and TO-247-3 package while providing higher continuous drain current (21A vs. 16A). This part offers improved thermal performance and is currently in active production with ROHS3 compliance.

Q: Why is APT24M80B listed as a substitute if it has 800V rating?

A: APT24M80B is listed as an enhanced alternative for applications where higher voltage margin is required. The 800V rating provides protection against voltage transients while maintaining backward compatibility. The higher current rating (25A) and power dissipation (625W) offer additional design margin. This part is suitable only if the application circuit can accommodate the higher voltage rating.

Q: Can I use IXFH18N60P as a substitute?

A: Yes. IXFH18N60P is a 600V/18A MOSFET in TO-247-3 package with active product status and ROHS3 compliance. The slightly higher current rating (18A vs. 16A) and significantly lower gate charge (50 nC vs. 170 nC) make it suitable for applications where faster switching is beneficial.

Q: What does the TO-247-3 package designation mean?

A: TO-247-3 is a through-hole package with three leads (Gate, Drain, Source) commonly used for power MOSFETs. All substitute parts listed maintain this package type, ensuring mechanical and electrical compatibility with existing PCB layouts and socket designs.

Q: Are all substitute parts ROHS3 compliant?

A: IRFPC60LCPBF, IRFPC60PBF, IRFP21N60LPBF, IXFH18N60P, and APT24M80B are all ROHS3 compliant. AOK20N60L is ROHS3 compliant but obsolete. IXTH12N65X2 is ROHS3 compliant but not recommended as a direct substitute due to lower current rating.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (IXFH18N60P at 50 nC) enables faster switching and reduced gate drive power. Higher gate charge (STW18NK60Z at 170 nC) requires more gate drive energy but may offer other performance benefits. Selection depends on gate driver capability and switching frequency requirements.

Q: Can I use a higher-rated part in place of the STW18NK60Z?

A: Yes, provided the higher-rated part maintains the same or lower on-state resistance and is compatible with the gate drive circuit. Parts with higher current ratings (AOK20N60L, IRFP21N60LPBF) or voltage ratings (APT24M80B) are backward compatible and provide additional design margin.

Q: What is the difference between obsolete and active product status?

A: Active products are currently manufactured and supported by the supplier with guaranteed availability. Obsolete products are no longer manufactured but may remain in inventory. For new designs and long-term production, active products (IRFPC60LCPBF, IRFPC60PBF, IRFP21N60LPBF, IXFH18N60P, APT24M80B) are recommended.

Request Quote (Ships tomorrow)