STW15NK90Z Equivalent & Substitute Parts

Part Overview

The STW15NK90Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 900V drain-to-source voltage with 15A continuous drain current at 25°C. This device is housed in a TO-247-3 package and is part of the SuperMESH™ series. The component is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, allowing for component interchangeability in circuit designs where the main part becomes unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	15	A
On-State Resistance (Rds On Max) @ Id, Vgs	550 mOhm @ 7.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 150µA
Gate Charge (Qg Max) @ Vgs	256	nC @ 10V
Power Dissipation (Max)	350	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the STW15NK90Z is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss) rating must equal or exceed 900V
Continuous Drain Current (Id) must equal or exceed 15A at 25°C
On-State Resistance (Rds On) must not exceed 550 mOhm at the specified gate voltage
Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must encompass -55°C to 150°C
Package must be through-hole TO-247 variant
FET type must be N-Channel with MOSFET technology

Secondary Compatibility Factors:

Gate Charge (Qg) characteristics affect switching performance
Input Capacitance (Ciss) influences gate drive requirements
Power Dissipation rating provides thermal headroom margin

All identified substitute parts meet the mandatory electrical and mechanical criteria for direct circuit substitution.

Parameter Comparison

Parameter	STW15NK90Z (Main)	IXFH14N85X	IXFH24N90P	IXFR24N100Q3
Manufacturer	STMicroelectronics	IXYS	IXYS	IXYS
Vdss (V)	900	850	900	1000
Id @ 25°C (A)	15	14	24	18
Rds On Max (mOhm)	550 @ 7.5A, 10V	550 @ 500mA, 10V	420 @ 12A, 10V	490 @ 12A, 10V
Vgs(th) Max (V)	4.5 @ 150µA	5.5 @ 1mA	6.5 @ 1mA	6.5 @ 4mA
Qg Max (nC)	256 @ 10V	30 @ 10V	130 @ 10V	140 @ 10V
Ciss Max (pF)	6100 @ 25V	1043 @ 25V	7200 @ 25V	7200 @ 25V
Power Dissipation Max (W)	350	460	660	500
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247 (IXTH)	TO-247AD (IXFH)	ISOPLUS247™
Product Status	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH14N85X (IXYS)

This substitute operates at 850V Vdss with 14A continuous drain current. The lower voltage rating (50V below the main part) restricts application to circuits where maximum system voltage does not exceed 850V. The current rating of 14A is marginally below the 15A specification. This part is suitable for applications with reduced voltage headroom requirements and lower current demands. All compliance certifications match the main part.

IXFH24N90P (IXYS)

This substitute matches the 900V Vdss rating of the main part while providing 24A continuous drain current, representing a 60% increase in current capacity. The on-state resistance of 420 mOhm is lower than the main part's 550 mOhm, indicating improved efficiency. Higher gate charge (130 nC versus 256 nC) and input capacitance (7200 pF versus 6100 pF) require evaluation of gate drive circuit capability. Power dissipation rating of 660W exceeds the main part. This part is suitable for applications requiring higher current handling with equivalent voltage performance. All compliance certifications match the main part.

IXFR24N100Q3 (IXYS)

This substitute provides the highest voltage rating at 1000V Vdss with 18A continuous drain current. The on-state resistance of 490 mOhm is lower than the main part. The higher voltage rating provides additional system margin for transient overvoltage conditions. Gate charge and input capacitance are comparable to IXFH24N90P. Power dissipation rating of 500W is adequate for the specified current levels. This part is suitable for applications requiring higher voltage margin with moderate current increase. All compliance certifications match the main part.

All substitute parts are Active in product status, RoHS3 compliant, and carry unlimited moisture sensitivity rating (MSL 1), matching the main part's compliance profile.

Frequently Asked Questions (FAQ)

Q: Can IXFH14N85X be used as a direct replacement for STW15NK90Z?

A: IXFH14N85X operates at 850V Vdss, which is 50V below the main part's 900V rating. Direct substitution is limited to applications where the maximum system voltage does not exceed 850V. The 14A current rating is also marginally below the 15A specification. Circuit voltage and current requirements must be verified before substitution.

Q: What are the advantages of IXFH24N90P over the STW15NK90Z?

A: IXFH24N90P maintains the 900V Vdss rating while providing 24A continuous drain current (60% higher than the main part). On-state resistance is reduced to 420 mOhm, improving efficiency. Power dissipation capability increases to 660W. These characteristics make it suitable for higher-current applications with equivalent voltage performance. Gate drive circuit compatibility must be confirmed due to higher gate charge.

Q: Is IXFR24N100Q3 suitable for all applications using STW15NK90Z?

A: IXFR24N100Q3 provides higher voltage rating (1000V) and current capacity (18A) compared to the main part. The ISOPLUS247™ package is mechanically compatible with TO-247-3 applications. This part is suitable for applications requiring higher voltage margin and moderate current increase. Gate drive circuit requirements should be evaluated due to comparable gate charge characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts (IXFH14N85X, IXFH24N90P, and IXFR24N100Q3) are RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1), matching the compliance profile of the STW15NK90Z.

Q: What is the primary difference between TO-247-3 and ISOPLUS247™ packages?

A: Both are through-hole packages with mechanical compatibility for circuit board mounting. ISOPLUS247™ is an IXYS variant of the TO-247 standard. Pin configuration and thermal characteristics are compatible for direct substitution in existing PCB layouts.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. STW15NK90Z requires 256 nC, while IXFH14N85X requires only 30 nC. Higher gate charge in IXFH24N90P (130 nC) and IXFR24N100Q3 (140 nC) may require gate drive circuit adjustment to maintain switching speed and efficiency. Gate driver current capability and timing must be verified for each substitute.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Input capacitance (Ciss) and gate charge characteristics affect high-frequency performance. STW15NK90Z has Ciss of 6100 pF, while IXFH14N85X has 1043 pF, and both IXFH24N90P and IXFR24N100Q3 have 7200 pF. These differences influence switching losses and gate drive requirements. Circuit performance at target frequency must be evaluated for each substitute.

Q: What inventory availability exists for these parts?

A: STW15NK90Z has 3507 pieces in stock. IXFH14N85X has 1086 pieces, IXFH24N90P has 1454 pieces, and IXFR24N100Q3 has 951 pieces available. Inventory levels should be confirmed for production requirements.

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