STW15NB50 N-Channel 500V 14.6A MOSFET Equivalent & Substitute Parts

Part Overview

The STW15NB50 is an N-Channel 500V 14.6A MOSFET manufactured by STMicroelectronics in the PowerMESH™ series, housed in a TO-247-3 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The part delivers 190W maximum power dissipation at the case temperature and operates at a maximum junction temperature of 150°C. Substitution is necessary to maintain component availability and ensure long-term supply chain reliability for applications utilizing this topology.

Key Parameters

Parameter	STW15NB50 Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	14.6	A
On-State Resistance (Rds On Max) @ 7.5A, 10V	360	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	5	V
Gate Charge (Qg Max) @ 10V	80	nC
Input Capacitance (Ciss Max) @ 25V	3400	pF
Power Dissipation (Max)	190	W
Maximum Junction Temperature	150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STW15NB50 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 14.6A at 25°C
Package Type: Must be TO-247-3 or compatible TO-247 variant
Mounting Type: Must be through-hole
Gate Drive Voltage: Must support 10V operation
Maximum Junction Temperature: Must support 150°C operation

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance but do not disqualify substitution
Gate Charge (Qg): Lower values reduce switching losses but do not disqualify substitution
Input Capacitance (Ciss): Lower values reduce gate drive requirements but do not disqualify substitution
Power Dissipation: Equal or higher ratings ensure thermal compatibility

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with 500V Vdss and ≥14.6A Id) and Functional Alternatives (meeting primary criteria with voltage or current deviations that require application-level verification).

Parameter Comparison

Parameter	STW15NB50	STW20NK50Z	IRFP17N50LPBF	IRFP354	IRFP450PBF	IXFH20N50P3
Manufacturer	STMicroelectronics	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Infineon Technologies	IXYS
Vdss (V)	500	500	500	450	500	500
Id @ 25°C (A)	14.6	17	16	14	14	20
Rds On Max @ 10V (mOhm)	360	270	320	350	400	300
Vgs(th) Max (V)	5	4.5	5	4	4	5
Qg Max @ 10V (nC)	80	119	130	160	150	36
Ciss Max @ 25V (pF)	3400	2600	2760	2700	2600	1800
Power Dissipation Max (W)	190	190	220	190	190	380
Max Junction Temperature (°C)	150	150	150	150	150	150
Package	TO-247-3	TO-247-3	TO-247AC	TO-247AC	TO-247AC	TO-247AD
Product Status	Obsolete	Active	Active	Active	Obsolete	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Recommended Primary Substitute: STW20NK50Z

The STW20NK50Z is the preferred substitute for the STW15NB50. Both devices are manufactured by STMicroelectronics and share identical voltage and thermal specifications (500V Vdss, 150°C maximum junction temperature). The STW20NK50Z provides superior electrical performance with 17A continuous drain current (versus 14.6A), lower on-state resistance (270mOhm versus 360mOhm), and reduced gate charge (119nC versus 80nC). The device is actively produced and ROHS3 compliant, ensuring long-term availability and regulatory compliance. The TO-247-3 package is mechanically and electrically identical to the original part.

Secondary Substitute: IXFH20N50P3

The IXFH20N50P3 manufactured by IXYS meets all primary substitution criteria with 500V Vdss and 20A continuous drain current. This device offers the lowest on-state resistance (300mOhm) and gate charge (36nC) among all substitutes, resulting in superior switching efficiency and reduced gate drive power. Power dissipation capability is doubled (380W versus 190W), providing enhanced thermal margin. The TO-247AD package is mechanically compatible with TO-247-3 applications. The device is actively produced and ROHS3 compliant. Higher gate charge and input capacitance values require verification of gate driver capability in the target application.

Tertiary Substitute: IRFP17N50LPBF

The IRFP17N50LPBF manufactured by Vishay Siliconix provides 500V Vdss and 16A continuous drain current, meeting primary substitution criteria. On-state resistance (320mOhm) and gate charge (130nC) are comparable to the original part. Power dissipation is rated at 220W, providing 15% additional thermal margin. The device is actively produced and ROHS3 compliant. The TO-247AC package is mechanically compatible with TO-247-3 applications.

Not Recommended: IRFP354

The IRFP354 has a reduced drain-source voltage rating of 450V, which falls below the 500V specification of the STW15NB50. This device is suitable only for applications where the 450V rating is acceptable and does not represent a direct equivalent.

Not Recommended: IRFP450PBF

The IRFP450PBF is classified as obsolete, matching the status of the original part. While it meets voltage and current specifications, it does not resolve the supply chain discontinuity issue. The device is not ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can the STW20NK50Z directly replace the STW15NB50 without circuit modifications?

A: Yes. The STW20NK50Z is a direct mechanical and electrical substitute. Both devices share identical voltage ratings (500V Vdss), thermal specifications (150°C maximum junction temperature), and package type (TO-247-3). The higher current rating (17A versus 14.6A) and lower on-state resistance (270mOhm versus 360mOhm) of the STW20NK50Z provide improved performance without requiring circuit changes.

Q: What is the difference between TO-247-3, TO-247AC, and TO-247AD packages?

A: All three variants are mechanically compatible through-hole packages with identical pin configurations and thermal characteristics. TO-247-3 is the original designation, while TO-247AC and TO-247AD are manufacturer-specific variants of the same physical package. Devices in any of these package types can be substituted in applications designed for TO-247-3 mounting.

Q: Why does the IXFH20N50P3 have significantly lower gate charge than other substitutes?

A: The IXFH20N50P3 employs IXYS HiPerFET™ and Polar3™ technology, which reduces gate charge through optimized semiconductor structure. Lower gate charge reduces switching losses and gate driver power consumption. However, the application's gate driver circuit must be verified to ensure it can properly drive the device within the specified gate voltage range (±30V).

Q: Is the IRFP354 suitable as a substitute despite its 450V rating?

A: The IRFP354 does not meet the primary substitution criterion of 500V Vdss. It is suitable only for applications where the reduced voltage rating is acceptable. For designs requiring 500V operation, the IRFP354 is not recommended.

Q: What is the significance of RoHS compliance in selecting a substitute?

A: RoHS3 compliance indicates the device meets current environmental and regulatory standards for lead-free manufacturing and restricted substance limitations. The STW15NB50 is RoHS non-compliant, reflecting its obsolete status. All recommended substitutes (STW20NK50Z, IXFH20N50P3, IRFP17N50LPBF) are ROHS3 compliant, ensuring compatibility with modern procurement and manufacturing requirements.

Q: Can the IRFP450PBF be used as a substitute?

A: The IRFP450PBF meets electrical specifications (500V Vdss, 14A Id) but is classified as obsolete, identical to the original part's status. Using an obsolete substitute does not resolve supply chain continuity. The IRFP450PBF is not ROHS3 compliant. Active substitutes such as STW20NK50Z or IXFH20N50P3 are preferred.

Q: How do I determine which substitute is best for my application?

A: Selection depends on application-specific requirements. For direct replacement with improved performance and active production status, use STW20NK50Z. For maximum efficiency and lowest switching losses, use IXFH20N50P3 (verify gate driver compatibility). For balanced performance with higher thermal margin, use IRFP17N50LPBF. All three devices meet the primary electrical and mechanical criteria of the STW15NB50.

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