STW150NF55 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STW150NF55 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 55V drain-to-source voltage with 120A continuous drain current at 25°C. This device is packaged in TO-247-3 through-hole configuration and is part of the STripFET™ II series. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	120	A
On-State Resistance (Rds On Max) @ 60A, 10V	6	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	190	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STW150NF55 is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 55V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package/Case: TO-247-3 or TO-247AC (mechanically compatible through-hole packages)
Gate Threshold Voltage: 4V @ 250µA (exact match)
Maximum Gate Voltage: ±20V (exact match)
Operating Temperature Range: -55°C to 175°C (exact match)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 120A requirement
On-State Resistance (Rds On): Lower values indicate improved performance
Power Dissipation: Substitute must support thermal requirements of application
Gate Charge (Qg): Affects switching speed and driver requirements
Input Capacitance (Ciss): Influences gate drive circuit design

All substitute parts listed maintain identical voltage ratings, temperature ranges, and gate characteristics while offering variations in current handling, on-state resistance, and power dissipation capabilities.

Parameter Comparison

Parameter	STW150NF55	HUF75344G3	HUF75345G3	IRFP064NPBF	IRFP1405PBF
Manufacturer	STMicroelectronics	onsemi	onsemi	Infineon Technologies	Infineon Technologies
Vdss (V)	55	55	55	55	55
Id @ 25°C (A)	120	75	75	110	95
Rds On Max (mOhm)	6 @ 60A, 10V	8 @ 75A, 10V	7 @ 75A, 10V	8 @ 59A, 10V	5.3 @ 95A, 10V
Vgs(th) Max @ 250µA (V)	4	4	4	4	4
Qg Max @ Vgs (nC)	190 @ 10V	210 @ 20V	275 @ 20V	170 @ 10V	180 @ 10V
Vgs Max (V)	±20	±20	±20	±20	±20
Ciss Max @ 25V (pF)	4400	3200	4000	4000	5600
Power Dissipation Max (W)	300	285	325	200	310
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-247-3	TO-247-3	TO-247-3	TO-247AC	TO-247AC
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFP1405PBF (Infineon Technologies)

The IRFP1405PBF is the primary substitute for the STW150NF55. This part maintains all critical electrical specifications including 55V Vdss, 4V gate threshold voltage, and ±20V maximum gate voltage. The IRFP1405PBF delivers 95A continuous drain current, which approaches the original 120A specification. The on-state resistance of 5.3 mOhm at 95A, 10V is superior to the original 6 mOhm specification, providing improved efficiency. Power dissipation capability of 310W exceeds the original 300W rating. The device is classified as Active product status with full ROHS3 compliance and REACH unaffected certification. TO-247AC packaging is mechanically compatible with TO-247-3 through-hole mounting.

IRFP064NPBF (Infineon Technologies)

The IRFP064NPBF provides an alternative with 110A continuous drain current, closely matching the original 120A specification. This part maintains identical voltage ratings and gate characteristics. On-state resistance of 8 mOhm at 59A, 10V is higher than the original specification. Power dissipation of 200W is lower than the original 300W rating, which may limit thermal performance in high-power applications. This device is Active status with ROHS3 compliance. TO-247AC packaging is mechanically compatible.

HUF75345G3 (onsemi)

The HUF75345G3 offers 75A continuous drain current with superior on-state resistance of 7 mOhm at 75A, 10V. Power dissipation of 325W exceeds the original specification. This part is Active status with ROHS3 compliance. The lower current rating of 75A represents a significant reduction from the original 120A specification and is suitable only for applications with reduced current requirements. TO-247-3 packaging provides direct mechanical compatibility.

HUF75344G3 (onsemi)

The HUF75344G3 is rated for 75A continuous drain current with on-state resistance of 8 mOhm at 75A, 10V. Power dissipation of 285W is slightly below the original specification. This part is Active status with ROHS3 compliance. The 75A current rating represents a significant reduction from the original 120A specification. TO-247-3 packaging provides direct mechanical compatibility.

Frequently Asked Questions (FAQ)

Q: Can the HUF75344G3 or HUF75345G3 directly replace the STW150NF55 in all applications?

A: These onsemi parts are electrically compatible in terms of voltage ratings and gate characteristics but are rated for 75A continuous drain current compared to the original 120A specification. Substitution is valid only for applications where the actual drain current requirement does not exceed 75A. Circuit redesign or thermal analysis may be required to confirm suitability.

Q: What is the difference between TO-247-3 and TO-247AC packaging?

A: Both packages are through-hole mounted with identical pin configurations and mechanical footprints. TO-247AC is a variant designation used by some manufacturers. The packages are mechanically and electrically interchangeable for PCB mounting purposes.

Q: Why does the IRFP1405PBF have higher gate charge than the original STW150NF55?

A: Gate charge is measured at different gate voltage levels (IRFP1405PBF at 20V versus STW150NF55 at 10V). Higher measurement voltage results in higher gate charge values. The gate charge at 10V for the IRFP1405PBF is 180 nC, which is comparable to the original 190 nC specification.

Q: Is the lower power dissipation rating of the IRFP064NPBF a concern?

A: The IRFP064NPBF is rated for 200W maximum power dissipation compared to the original 300W. This specification reflects the device's thermal characteristics under specific test conditions. Application suitability depends on actual power dissipation in the circuit, which is determined by on-state resistance and current levels. Thermal analysis of the specific application is required.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed are ROHS3 compliant and REACH unaffected, matching the compliance status of the original STW150NF55.

Q: Which substitute part offers the best on-state resistance performance?

A: The IRFP1405PBF provides the lowest on-state resistance at 5.3 mOhm at 95A, 10V, offering superior efficiency compared to the original 6 mOhm specification at 60A, 10V.

Q: Can I use the HUF75345G3 in a 120A application?

A: No. The HUF75345G3 is rated for maximum 75A continuous drain current. Using this part in a 120A application would exceed its current rating and result in device failure or reduced reliability.

Q: What is the inventory status of these substitute parts?

A: IRFP1405PBF has 37,370 pieces in stock, IRFP064NPBF has 65,100 pieces in stock, HUF75345G3 has 1,810 pieces in stock, and HUF75344G3 has 1,240 pieces in stock. All parts are available as new original stock.

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