STW13NK80Z Equivalent & Substitute Parts

Part Overview

The STW13NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 12A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is part of the SuperMESH™ series. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing system support and new design alternatives. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	12	A
On-State Resistance (Rds On) @ 6A, 10V	650	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	155	nC
Power Dissipation (Max)	230	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the STW13NK80Z is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 800V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C
Mounting Type: Through Hole

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 12A
On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

Packaging Consideration:

Primary package: TO-247-3 or equivalent mechanical footprint
Alternative packages: TO-247 variants acceptable with mechanical verification

All substitute parts listed meet the mandatory matching criteria and maintain electrical compatibility within the specified operating envelope.

Parameter Comparison

Parameter	STW13NK80Z (Main)	APT12M80B	FQAF13N80	IXFH12N80P	SPW11N80C3FKSA1
Manufacturer	STMicroelectronics	Microchip Technology	onsemi	IXYS	Infineon Technologies
Vdss (V)	800	800	800	800	800
Id @ 25°C (A)	12	13	8	12	11
Rds On @ 10V (mOhm)	650 @ 6A	800 @ 6A	750 @ 4A	850 @ 500mA	450 @ 7.1A
Vgs(th) (V)	4.5 @ 100µA	5 @ 1mA	5 @ 250µA	5.5 @ 2.5mA	3.9 @ 680µA
Gate Charge Qg @ 10V (nC)	155	80	88	51	85
Power Dissipation (W)	230	335	120	360	156
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247 [B]	TO-3PF	TO-247AD	PG-TO247-3-1
Product Status	Obsolete	Active	Obsolete	Active	Not For New Designs
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

APT12M80B (Microchip Technology)

Product Status: Active
Recommended for new designs requiring 800V, 13A N-Channel MOSFET in TO-247 package
Provides higher current rating (13A vs 12A) and superior power dissipation (335W vs 230W)
On-state resistance slightly higher (800mOhm vs 650mOhm) at specified test conditions
Lower gate charge (80nC vs 155nC) reduces switching losses
RoHS3 compliant; suitable for long-term production support

IXFH12N80P (IXYS)

Product Status: Active
Recommended for applications requiring matched current rating (12A) and enhanced thermal performance (360W)
Lowest gate charge (51nC) among substitutes, minimizing switching losses
Highest power dissipation rating provides thermal margin
RoHS3 compliant; suitable for long-term production support
TO-247AD package maintains mechanical compatibility with TO-247-3 footprint

SPW11N80C3FKSA1 (Infineon Technologies)

Product Status: Not For New Designs
Acceptable for legacy system support and replacement applications only
Lowest on-state resistance (450mOhm @ 7.1A) provides superior efficiency
Current rating slightly lower (11A vs 12A); suitable for applications with reduced current margin
RoHS3 compliant
Not recommended for new design initiation

FQAF13N80 (onsemi)

Product Status: Obsolete
Not recommended for new designs or long-term production support
Current rating reduced to 8A; insufficient for applications requiring 12A continuous drain current
Power dissipation limited to 120W; inadequate thermal performance
TO-3PF package differs from TO-247-3; requires mechanical redesign
Obsolete status limits supply chain availability

Frequently Asked Questions (FAQ)

Q: Can APT12M80B directly replace STW13NK80Z in existing designs?

A: APT12M80B is electrically compatible as a direct replacement. Both devices are rated for 800V Vdss, operate across -55°C to 150°C, and are N-Channel MOSFETs. The APT12M80B provides higher current capacity (13A vs 12A) and superior power dissipation (335W vs 230W). Package compatibility requires verification: APT12M80B uses TO-247 [B] while STW13NK80Z uses TO-247-3. Mechanical footprint compatibility should be confirmed with PCB layout documentation.

Q: Why is FQAF13N80 listed as a substitute if it has lower current rating?

A: FQAF13N80 is listed based on matching the mandatory criteria of 800V Vdss, N-Channel type, and MOSFET technology. However, the 8A continuous drain current is below the 12A requirement of the main part. This substitute is suitable only for applications with reduced current demands or where the 8A rating is sufficient for the specific circuit implementation. The TO-3PF package also requires mechanical redesign.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge directly affects switching speed and switching losses in the gate drive circuit. Lower gate charge (IXFH12N80P at 51nC) reduces energy required per switching cycle and enables faster switching transitions. Higher gate charge (STW13NK80Z at 155nC) requires more gate drive energy but may provide other performance benefits. Selection depends on the specific gate drive circuit design and switching frequency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are RoHS3 compliant. This ensures compatibility with environmental regulations and modern manufacturing standards. All parts also maintain REACH Unaffected status and EAR99 export classification, matching the compliance profile of the original STW13NK80Z.

Q: Which substitute is recommended for new product designs?

A: IXFH12N80P (IXYS) or APT12M80B (Microchip Technology) are recommended for new designs. Both are classified as Active products, ensuring long-term availability and manufacturing support. IXFH12N80P offers the lowest gate charge and highest power dissipation rating. APT12M80B provides the highest current capacity. Selection between these two depends on specific thermal and switching performance requirements of the application.

Q: What is the difference between TO-247-3 and TO-247AD packages?

A: Both TO-247-3 and TO-247AD are through-hole packages with three leads (Gate, Drain, Source). TO-247AD is the IXYS variant designation for the same mechanical footprint. These packages are mechanically compatible and can be used interchangeably in PCB designs. Pin assignment and lead spacing are identical.

Q: Can SPW11N80C3FKSA1 be used in new designs?

A: SPW11N80C3FKSA1 is classified as Not For New Designs by Infineon Technologies. This part is acceptable only for replacement and legacy system support. New product designs should utilize IXFH12N80P or APT12M80B, which are classified as Active products with guaranteed long-term availability.

Q: How do on-state resistance values affect circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses and heat generation during device operation. Lower Rds On values reduce power dissipation and improve efficiency. SPW11N80C3FKSA1 has the lowest Rds On (450mOhm @ 7.1A), while IXFH12N80P has the highest (850mOhm @ 500mA). Selection depends on the application's current levels and thermal management capabilities. Higher current applications benefit from lower Rds On values.

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