STW13NK60Z N-Channel 600V 13A MOSFET Equivalent & Substitute Parts

Part Overview

The STW13NK60Z is an N-Channel 600V 13A MOSFET manufactured by STMicroelectronics in the SuperMESH™ series. This through-hole TO-247-3 package device is rated for 150W power dissipation and operates across a temperature range of -55°C to 150°C. The part is Active in product status and fully RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, supply chain considerations, or application-specific performance needs within the allowed parameter specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	13	A
Power Dissipation (Max)	150	W
Rds On (Max) @ 10V	550	mOhm
Gate Charge (Qg) @ 10V	92	nC
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the STW13NK60Z is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Package Type: TO-247-3 mechanical compatibility
Mounting Type: Through Hole
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Secondary Performance Criteria:

Continuous Drain Current (Id): Equal to or greater than 13A
Power Dissipation: Equal to or greater than 150W
Gate Charge (Qg): Lower values preferred for switching efficiency
On-State Resistance (Rds On): Lower values preferred for thermal performance

Substitute parts are grouped into two categories based on voltage rating alignment:

Group 1 (600V Rating): IRFPC50APBF, IRFPC60LCPBF, IRFPC60PBF, IXFH14N60P These parts maintain the 600V Vdss specification and are direct voltage-class equivalents.

Group 2 (800V Rating): IXFH16N80P This part exceeds the voltage specification and operates in a higher voltage class. Substitution is valid for applications where higher voltage margin is acceptable.

Parameter Comparison

Parameter	STW13NK60Z	IRFPC50APBF	IRFPC60LCPBF	IRFPC60PBF	IXFH14N60P	IXFH16N80P
Manufacturer	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	IXYS	IXYS
Vdss (V)	600	600	600	600	600	800
Id @ 25°C (A)	13	11	16	16	14	16
Power Dissipation (W)	150	180	280	280	300	460
Rds On @ 10V (mOhm)	550	580	400	400	550	600
Gate Charge @ 10V (nC)	92	70	120	210	36	71
Input Capacitance @ 25V (pF)	2030	2100	3500	3900	2500	4600
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247AC	TO-247AC	TO-247AC	TO-247AD (IXFH)	TO-247AD (IXFH)
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes
REACH Unaffected	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IRFPC50APBF (Vishay Siliconix) This substitute operates at 600V with 11A continuous drain current. The part meets the voltage specification but falls below the 13A current rating of the STW13NK60Z. Selection is appropriate for applications where the actual operating current does not exceed 11A. The 180W power dissipation rating exceeds the original 150W specification. RoHS3 compliance and REACH unaffected status are confirmed.

IRFPC60LCPBF (Vishay Siliconix) This substitute operates at 600V with 16A continuous drain current and 280W power dissipation, both exceeding the STW13NK60Z specifications. The on-state resistance of 400mOhm is lower than the original 550mOhm, providing improved thermal performance. Gate charge of 120nC is higher than the original 92nC. RoHS3 compliance and REACH unaffected status are confirmed.

IRFPC60PBF (Vishay Siliconix) This substitute operates at 600V with 16A continuous drain current and 280W power dissipation. The on-state resistance of 400mOhm is lower than the original specification. Gate charge of 210nC is significantly higher than the original 92nC, which may impact switching frequency performance. Maximum gate voltage is ±20V compared to the original ±30V. RoHS3 compliance and REACH unaffected status are confirmed.

IXFH14N60P (IXYS) This substitute operates at 600V with 14A continuous drain current and 300W power dissipation, both exceeding the STW13NK60Z specifications. The on-state resistance of 550mOhm matches the original specification. Gate charge of 36nC is significantly lower than the original 92nC, providing improved switching efficiency. RoHS3 compliance and REACH unaffected status are confirmed.

IXFH16N80P (IXYS) This substitute operates at 800V with 16A continuous drain current and 460W power dissipation. The higher voltage rating provides additional design margin for applications subject to voltage transients or overvoltage conditions. The on-state resistance of 600mOhm is higher than the original specification. Gate charge of 71nC is lower than the original 92nC. RoHS3 compliance and REACH unaffected status are confirmed.

Frequently Asked Questions (FAQ)

Q: Can IRFPC50APBF replace STW13NK60Z in all applications? A: IRFPC50APBF is rated for 11A continuous drain current, which is below the 13A specification of STW13NK60Z. Substitution is valid only when the actual operating current does not exceed 11A at 25°C.

Q: What is the difference between TO-247-3, TO-247AC, and TO-247AD packages? A: All three variants are mechanically compatible TO-247 through-hole packages with three leads. TO-247AC and TO-247AD are manufacturer-specific designations for the same mechanical footprint. PCB layout and mounting procedures remain identical across these variants.

Q: Why does IXFH16N80P have a higher voltage rating than STW13NK60Z? A: IXFH16N80P is rated for 800V Vdss compared to 600V for STW13NK60Z. This higher voltage rating does not prevent substitution; it provides additional voltage margin. The part is suitable for applications where the circuit voltage does not exceed 600V.

Q: How does gate charge affect circuit performance? A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows higher switching frequencies. IXFH14N60P has the lowest gate charge at 36nC, while IRFPC60PBF has the highest at 210nC.

Q: Is on-state resistance (Rds On) critical for substitution? A: On-state resistance affects conduction losses and thermal performance. Lower Rds On values reduce power dissipation during conduction. IRFPC60LCPBF and IRFPC60PBF offer 400mOhm compared to the original 550mOhm, providing improved efficiency.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the environmental compliance status of STW13NK60Z.

Q: Can IRFPC60PBF be used if the circuit operates at ±25V gate voltage? A: IRFPC60PBF is rated for maximum gate voltage of ±20V, compared to ±30V for STW13NK60Z. If the circuit requires ±25V gate drive, IRFPC60PBF is not suitable. Alternative substitutes with ±30V rating are IRFPC50APBF, IXFH14N60P, or IXFH16N80P.

Q: What is the inventory status of substitute parts? A: IXFH16N80P has the highest inventory at 20,326 pieces. IRFPC50APBF has 2,225 pieces, IRFPC60LCPBF has 1,432 pieces, IRFPC60PBF has 1,260 pieces, and IXFH14N60P has 1,007 pieces. All parts are listed as new original stock.

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