STW13NB60 N-Channel MOSFET 600V 13A Equivalent & Substitute Parts

Part Overview

The STW13NB60 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 13A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and is designed for high-voltage switching applications requiring 190W maximum power dissipation. The STW13NB60 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

STW13NB60

STMicroelectronicsIn Stock: 1431STW13NB60 Datasheet

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APT15F60B

Microsemi CorporationIn Stock: 772APT15F60B Datasheet

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IRFPC50APBF

Vishay SiliconixIn Stock: 2301IRFPC50APBF Datasheet

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IRFPC50PBF

Vishay SiliconixIn Stock: 2063IRFPC50PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STW13NB60 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 600V
• Continuous Drain Current (Id) must meet or exceed 13A at 25°C
• On-State Resistance (Rds On) must not significantly degrade circuit performance
• Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
• Gate Charge (Qg) and Input Capacitance (Ciss) must be within acceptable switching speed parameters
• Maximum Gate Voltage (Vgs Max) must accommodate the drive circuit voltage range

Mechanical Compatibility Criteria:

• Package type must be TO-247-3 or equivalent TO-247 variant
• Through-hole mounting configuration required
• Thermal characteristics (Power Dissipation Max, Operating Temperature) must support application requirements

Compliance Criteria:

• RoHS and REACH compliance status
• Moisture Sensitivity Level (MSL) rating

The substitute parts listed below meet these criteria within acceptable engineering tolerances for direct circuit substitution.

Parameter Comparison

Engineering Selection Recommendations

APT15F60B (Microsemi Corporation)

The APT15F60B is an active product with ROHS3 compliance, offering superior electrical performance compared to the obsolete STW13NB60. The device provides 16A continuous drain current, exceeding the 13A requirement, with lower on-state resistance (430 mOhm vs. 540 mOhm). Power dissipation capability is increased to 290W, providing additional thermal margin. The APT15F60B operates across an extended temperature range (-55°C to 150°C) and is housed in a TO-247 [B] package compatible with TO-247-3 footprints. This part is recommended for new designs and legacy system upgrades where compliance and long-term availability are required.

IRFPC50APBF (Vishay Siliconix)

The IRFPC50APBF is an active product with ROHS3 compliance, offering a direct functional alternative to the STW13NB60. The device provides 11A continuous drain current, which is below the original 13A specification but remains suitable for applications with reduced current requirements. On-state resistance is 580 mOhm, comparable to the original part. Gate charge is minimized at 70 nC, supporting faster switching characteristics. The IRFPC50APBF operates across an extended temperature range (-55°C to 150°C) and is packaged in TO-247AC format. This part is suitable for applications where the 11A current rating is acceptable and lower gate charge is beneficial.

IRFPC50PBF (Vishay Siliconix)

The IRFPC50PBF is an active product with ROHS3 compliance, functionally equivalent to the IRFPC50APBF with identical electrical ratings. The device provides 11A continuous drain current with 600 mOhm on-state resistance. Gate charge is specified at 140 nC, which is higher than the IRFPC50APBF variant. Maximum gate voltage is limited to ±20V compared to ±30V on other variants. The IRFPC50PBF operates across an extended temperature range (-55°C to 150°C) and is packaged in TO-247AC format. This part is suitable for applications where the 11A current rating is acceptable and gate voltage constraints are not limiting.

Frequently Asked Questions (FAQ)

Q: Can the APT15F60B directly replace the STW13NB60 in existing circuits?

A: The APT15F60B is electrically compatible with the STW13NB60 for direct substitution. Both devices share identical 600V Vdss rating, compatible gate threshold voltage (5V), and similar gate charge characteristics. The APT15F60B provides higher current capability (16A vs. 13A) and improved on-state resistance (430 mOhm vs. 540 mOhm), making it a superior replacement. Package compatibility is maintained through TO-247 [B] to TO-247-3 footprint equivalence. The APT15F60B is recommended for new procurement due to active product status and ROHS3 compliance.

Q: Why do the IRFPC50APBF and IRFPC50PBF have lower current ratings than the STW13NB60?

A: The IRFPC50APBF and IRFPC50PBF are rated for 11A continuous drain current, which is 2A below the STW13NB60 specification of 13A. These devices are suitable for applications where the reduced current rating is acceptable. The lower current rating does not preclude substitution in circuits designed for 11A or less. For applications requiring the full 13A capability, the APT15F60B is the recommended substitute.

Q: Are there package compatibility concerns when substituting these parts?

A: All substitute parts are housed in TO-247 variants (TO-247 [B] or TO-247AC), which are mechanically and electrically compatible with the original TO-247-3 package. Through-hole mounting configuration is maintained across all parts. Pin assignments and thermal characteristics are equivalent, allowing direct PCB footprint compatibility without layout modifications.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The STW13NB60 specifies 82 nC gate charge at 10V. The IRFPC50APBF provides lower gate charge (70 nC), enabling faster switching transitions and reduced gate drive power dissipation. The IRFPC50PBF specifies higher gate charge (140 nC), which may require increased gate drive current but does not preclude substitution in circuits with adequate drive capability. The APT15F60B specifies 72 nC, providing switching characteristics comparable to the IRFPC50APBF.

Q: How do on-state resistance differences impact circuit performance?

A: On-state resistance (Rds On) directly affects conduction losses and heat dissipation. The STW13NB60 specifies 540 mOhm at 6.5A and 10V gate voltage. The APT15F60B provides lower resistance (430 mOhm), reducing conduction losses by approximately 20%. The IRFPC50APBF and IRFPC50PBF specify 580 mOhm and 600 mOhm respectively, which are slightly higher than the original part. For applications sensitive to conduction losses, the APT15F60B is preferred. For applications where the original resistance is acceptable, all substitutes are suitable.

Q: What compliance advantages do the active substitute parts offer?

A: All substitute parts are ROHS3 compliant and carry active product status, ensuring long-term availability and supply chain stability. The STW13NB60 is classified as obsolete and non-compliant with current RoHS regulations. Substitution with active, compliant parts eliminates procurement risk and supports regulatory compliance requirements for new designs and system upgrades.

Q: Can the IRFPC50APBF and IRFPC50PBF be used interchangeably?

A: The IRFPC50APBF and IRFPC50PBF share identical electrical ratings for Vdss, Id, and operating temperature. Key differences include gate charge (70 nC vs. 140 nC) and maximum gate voltage (±30V vs. ±20V). The IRFPC50APBF is preferred for applications requiring faster switching or higher gate voltage tolerance. The IRFPC50PBF is suitable for applications where gate voltage is limited to ±20V and higher gate charge is acceptable. Both parts are functionally interchangeable in circuits designed within these parameter ranges.