STW12NK95Z N-Channel 950V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The STW12NK95Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 950V drain-to-source voltage with 10A continuous drain current at 25°C. This device features the SuperMESH™ series technology and is housed in a TO-247-3 through-hole package with a maximum power dissipation of 230W. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, and thermal characteristics while accommodating packaging and performance variations.

Key Parameters

Parameter	STW12NK95Z	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	950	V
Continuous Drain Current (Id) @ 25°C	10	A
Rds On (Max) @ 5A, 10V	900	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4.5	V
Gate Charge (Qg) @ 10V	113	nC
Input Capacitance (Ciss) @ 25V	3500	pF
Maximum Gate Voltage (Vgs)	±30	V
Power Dissipation (Max)	230	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Product Status	Obsolete	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STW12NK95Z is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Vdss rating equal to or greater than 950V to ensure safe operation under maximum voltage stress. Parts rated at 800V fall below this threshold and are suitable only for applications with reduced voltage headroom. Parts rated at 1000V or higher provide direct voltage compatibility.

Current Rating Compatibility: The 10A continuous drain current specification establishes a minimum current capacity requirement. Substitute parts rated at 10A or higher maintain functional equivalence. Parts rated below 10A are not suitable for direct replacement.

On-Resistance (Rds On) Characteristics: The STW12NK95Z specifies 900mOhm maximum at 5A and 10V gate voltage. Substitute parts with lower Rds On values provide improved efficiency and reduced power dissipation. Higher Rds On values may result in excessive heat generation and are not recommended.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters affect switching speed and gate drive requirements. Variations in these values indicate different switching characteristics and may require gate driver adjustments.

Power Dissipation Rating: The 230W maximum power dissipation establishes thermal management requirements. Substitute parts with equal or higher power ratings ensure adequate thermal performance.

Package and Mounting: All substitute parts utilize TO-247-3 or TO-247AD through-hole packaging, maintaining mechanical and thermal interface compatibility.

Gate Voltage Rating (Vgs): The STW12NK95Z supports ±30V maximum gate voltage. Substitute parts with ±20V or ±30V ratings are compatible; lower ratings may limit gate drive flexibility.

Parameter Comparison

Parameter	STW12NK95Z	IXFH10N100Q	IXFH10N80P	IXFH11N80	IXFH12N100	IXFH12N100F	IXFH12N100P	IXFH12N100Q	IXFH12N90P	IXFH15N100Q3	IXFH16N120P	Unit
Manufacturer	STMicroelectronics	IXYS	IXYS	IXYS	IXYS	IXYS	IXYS	IXYS	IXYS	IXYS	IXYS	—
Vdss	950	1000	800	800	1000	1000	1000	1000	900	1000	1200	V
Id @ 25°C	10	10	10	11	12	12	12	12	12	15	16	A
Rds On (Max)	900	1200	1100	950	1050	1050	1050	1050	900	1050	950	mOhm
Vgs(th) (Max)	4.5	4.5	5.5	4.5	4.5	5.5	5.0	5.5	6.5	6.5	6.5	V
Qg (Max) @ 10V	113	155	40	155	155	77	80	90	56	64	120	nC
Ciss (Max) @ 25V	3500	4000	2050	4200	4000	2700	4080	2900	3080	3250	6900	pF
Vgs (Max)	±30	±20	±30	±20	±20	±20	±30	±20	±30	±30	±30	V
Power Dissipation (Max)	230	300	300	300	300	300	463	300	380	690	660	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	—
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Substitutes (Voltage and Current Matched):

The IXFH12N100Q, IXFH12N100F, IXFH12N100P, and IXFH12N100 represent the closest functional equivalents to the STW12NK95Z. These parts maintain 1000V Vdss rating (exceeding the 950V requirement), 12A continuous drain current (exceeding the 10A requirement), and TO-247-3 package compatibility. All four variants are classified as active products with ROHS3 compliance, ensuring long-term availability and regulatory compliance. The IXFH12N100P variant offers the highest power dissipation rating at 463W, providing superior thermal performance compared to the original 230W specification.

Secondary Substitutes (Voltage Matched, Current Exceeded):

The IXFH15N100Q3 and IXFH10N100Q provide 1000V Vdss compatibility with current ratings of 15A and 10A respectively. The IXFH15N100Q3 delivers significantly higher power dissipation (690W) and current capacity, suitable for applications requiring thermal margin. The IXFH10N100Q maintains exact 10A current matching with 1000V voltage rating and active product status.

Reduced Voltage Substitutes (800V to 900V Vdss):

The IXFH10N80P, IXFH11N80, and IXFH12N90P are suitable only for applications where the maximum operating voltage does not exceed 800V or 900V respectively. These parts offer improved on-resistance characteristics and reduced gate charge, enabling faster switching performance. The IXFH10N80P provides the lowest gate charge (40nC) among all substitutes, beneficial for high-frequency switching applications.

Higher Voltage Substitute (1200V Vdss):

The IXFH16N120P accommodates applications requiring voltage headroom beyond 950V, with 1200V Vdss rating and 16A current capacity. This part is suitable for high-voltage power conversion circuits and provides the highest power dissipation rating (660W) among all substitutes.

Compliance and Availability:

All substitute parts maintain ROHS3 compliance and active product status, ensuring regulatory alignment and long-term supply chain stability. Inventory availability ranges from 963 to 5525 units across the substitute portfolio, supporting both prototype development and production deployment.

Frequently Asked Questions (FAQ)

Q: Can the IXFH10N80P directly replace the STW12NK95Z?

A: The IXFH10N80P is not a direct replacement due to its 800V Vdss rating, which is 150V below the STW12NK95Z specification. This part is suitable only for applications where the maximum operating voltage does not exceed 800V. If your circuit operates at or near 950V, this substitute will not provide adequate voltage margin and may result in device failure.

Q: What is the difference between IXFH12N100P and IXFH12N100Q?

A: Both parts share identical electrical specifications (1000V, 12A, 1.05Ohm Rds On) and package compatibility. The primary differences are gate threshold voltage (5V for P-class versus 5.5V for Q-class), gate charge (80nC versus 90nC), and input capacitance (4080pF versus 2900pF). The Q-class variant exhibits lower input capacitance and higher gate threshold, resulting in different gate drive characteristics. The P-class variant supports ±30V gate voltage compared to ±20V for Q-class, providing greater gate drive flexibility.

Q: Is the IXFH12N100F suitable for high-frequency switching applications?

A: The IXFH12N100F exhibits lower gate charge (77nC) and reduced input capacitance (2700pF) compared to the STW12NK95Z (113nC and 3500pF respectively), making it suitable for high-frequency switching. The reduced capacitance and charge values enable faster switching transitions and lower gate drive power consumption.

Q: Can I use the IXFH15N100Q3 in place of the STW12NK95Z?

A: Yes, the IXFH15N100Q3 is a suitable substitute. It exceeds the STW12NK95Z specifications in voltage (1000V versus 950V), current (15A versus 10A), and power dissipation (690W versus 230W). The higher current and power ratings provide design margin for thermal and electrical stress. Gate threshold voltage is higher (6.5V versus 4.5V), requiring verification of gate drive circuit compatibility.

Q: What are the packaging differences between TO-247-3 and TO-247AD?

A: TO-247-3 and TO-247AD are mechanically and thermally compatible through-hole packages. Both accommodate three leads (Gate, Drain, Source) with identical pin spacing and mounting hole patterns. The primary distinction is in internal lead frame design and thermal interface characteristics. All substitute parts listed maintain TO-247-3 package designation, ensuring direct mechanical compatibility with existing PCB layouts.

Q: Does the STW12NK95Z obsolescence affect long-term availability of substitute parts?

A: All recommended substitute parts are classified as active products with current production status. Inventory levels range from 963 to 5525 units across the substitute portfolio, supporting both immediate and long-term supply requirements. ROHS3 compliance and active manufacturer support ensure regulatory alignment and continued availability throughout the product lifecycle.

Q: How do I select between multiple substitute options?

A: Selection depends on application-specific requirements. For direct voltage and current matching, choose IXFH12N100 variants (Q, F, or P class). For applications requiring thermal margin, select IXFH15N100Q3 or IXFH12N100P. For high-frequency switching, prioritize IXFH12N100F or IXFH10N80P due to lower gate charge. For reduced voltage applications (≤800V), IXFH10N80P or IXFH11N80 offer improved switching performance. Verify gate drive circuit compatibility with selected gate threshold voltage and maximum gate voltage ratings.

Q: What is the impact of higher Rds On values on circuit performance?

A: Higher on-resistance increases conduction losses and heat generation. The STW12NK95Z specifies 900mOhm at 5A and 10V. Substitute parts with 1050mOhm or higher Rds On values will generate proportionally more heat at equivalent current levels. For thermal-sensitive applications, prioritize substitutes with equal or lower Rds On values, such as IXFH12N90P (900mOhm) or IXFH16N120P (950mOhm).

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message