STW12NK90Z Equivalent & Substitute Parts

Part Overview

The STW12NK90Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 900V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the SuperMESH™ series and is housed in a TO-247-3 through-hole package. The component is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be achieved within the specified parameter ranges. Alternative devices may be required due to inventory availability, lead time considerations, or application-specific performance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	11	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	880 mOhm @ 5.5A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5	V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	152	nC @ 10V
Power Dissipation (Max)	230	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the STW12NK90Z are identified based on the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V or higher
Continuous Drain Current (Id): Equal to or greater than 11A
Package Type: TO-247-3 or compatible through-hole package
Operating Temperature Range: -55°C to 150°C or wider
Drive Voltage: 10V
RoHS3 Compliance: Required
Moisture Sensitivity Level: MSL 1 (Unlimited)

Substitution Logic: Parts are considered equivalent when they maintain the same voltage rating (900V minimum), support equal or higher current ratings, operate within the same temperature range, and are housed in mechanically compatible packages. Gate charge, input capacitance, and on-resistance characteristics may vary within acceptable engineering tolerances for the application class.

Parameter Comparison

Parameter	STW12NK90Z (Main)	IXFH12N90P	IXFH16N120P
Manufacturer	STMicroelectronics	IXYS	IXYS
Drain to Source Voltage (Vdss)	900V	900V	1200V
Continuous Drain Current (Id) @ 25°C	11A	12A	16A
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	880 mOhm @ 5.5A, 10V	900 mOhm @ 6A, 10V	950 mOhm @ 8A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5V @ 100µA	6.5V @ 1mA	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10V	56 nC @ 10V	120 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 25V	3080 pF @ 25V	6900 pF @ 25V
Power Dissipation (Max)	230W	380W	660W
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-55°C to 150°C
Package Type	TO-247-3	TO-247AD (IXFH)	TO-247AD (IXFH)
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	MSL 1 (Unlimited)	MSL 1 (Unlimited)	MSL 1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXFH12N90P Substitution: The IXFH12N90P is a direct voltage-class equivalent to the STW12NK90Z, maintaining the 900V Vdss rating with a 12A continuous drain current specification. Both devices operate across the identical temperature range (-55°C to 150°C) and are housed in mechanically compatible TO-247 packages. Both parts carry RoHS3 compliance and MSL 1 rating. The IXFH12N90P exhibits lower gate charge (56 nC versus 152 nC) and reduced input capacitance (3080 pF versus 3500 pF), which may provide switching performance advantages in certain circuit topologies. The on-resistance characteristics are comparable (900 mOhm versus 880 mOhm). This substitute is suitable for direct replacement in applications where the 900V voltage class is required.

IXFH16N120P Substitution: The IXFH16N120P represents an upgraded voltage-class device with a 1200V Vdss rating and 16A continuous drain current. This part is applicable in applications where higher voltage margin or increased current capacity is required. The device maintains the same operating temperature range and compliance certifications as the main part. The higher voltage rating and increased power dissipation capability (660W versus 230W) position this device for use in higher-performance or thermally demanding applications. Gate charge and input capacitance are higher due to the increased voltage rating, which may affect switching characteristics. This substitute is suitable for applications that can accommodate the higher voltage specification.

Frequently Asked Questions (FAQ)

Q: Can the IXFH12N90P be used as a direct replacement for the STW12NK90Z?

A: Yes. Both devices share the same 900V drain-to-source voltage rating, operate within the identical temperature range (-55°C to 150°C), and are housed in mechanically compatible TO-247 packages. Both meet RoHS3 compliance and MSL 1 requirements. The IXFH12N90P provides 12A continuous drain current compared to 11A, and exhibits lower gate charge and input capacitance values. Direct substitution is supported from an electrical and mechanical standpoint.

Q: What is the primary difference between the IXFH12N90P and IXFH16N120P?

A: The IXFH16N120P operates at a higher voltage class (1200V versus 900V) and provides increased current capacity (16A versus 12A) and power dissipation capability (660W versus 380W). The higher voltage rating results in increased gate charge (120 nC versus 56 nC) and input capacitance (6900 pF versus 3080 pF). Selection between these devices depends on the application's voltage and current requirements.

Q: Are the TO-247-3 and TO-247AD packages mechanically compatible?

A: The TO-247-3 and TO-247AD packages are mechanically compatible through-hole packages with identical pin configurations and mounting footprints. Both packages support the same PCB layout and thermal management approaches. Substitution between devices using these package variants does not require PCB redesign.

Q: Do all substitute parts meet the same compliance standards as the STW12NK90Z?

A: Yes. Both the IXFH12N90P and IXFH16N120P are RoHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity ratings, and are REACH Unaffected. All parts share the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. The STW12NK90Z specifies 152 nC at 10V, while the IXFH12N90P specifies 56 nC at 10V. Lower gate charge typically results in faster switching transitions and reduced driver power requirements. The IXFH16N120P specifies 120 nC, which is intermediate between the two. Gate charge differences may affect switching frequency capability and thermal performance in high-frequency applications.

Q: What does the on-resistance (Rds On) specification indicate?

A: On-resistance (Rds On) represents the resistance between drain and source when the MOSFET is fully conducting. The STW12NK90Z specifies 880 mOhm at 5.5A and 10V gate voltage, while the IXFH12N90P specifies 900 mOhm at 6A and 10V. Lower on-resistance reduces conduction losses and heat generation. The specifications are measured at different current levels, reflecting the devices' respective current ratings. On-resistance directly impacts power dissipation in the application circuit.

Q: Can the IXFH16N120P be used in a 900V application?

A: Yes. The IXFH16N120P is rated for 1200V operation, which exceeds the 900V requirement. Devices with higher voltage ratings can be used in lower-voltage applications. However, the higher voltage rating results in increased gate charge and input capacitance, which may affect switching performance and driver requirements. Selection should be based on the specific application's voltage, current, and thermal requirements.

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