STW12NK80Z Equivalent & Substitute Parts

Part Overview

The STW12NK80Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 800V drain-to-source voltage with 10.5A continuous drain current at 25°C. This device is part of the SuperMESH™ series and is housed in a TO-247-3 through-hole package. The component is currently in active production status with 1530 units in stock.

Equivalent and substitute parts are identified when applications require alternative sourcing, inventory availability, or when design specifications allow for components with comparable or enhanced electrical characteristics within the same voltage and package class. The substitute parts listed maintain the critical 800V voltage rating and through-hole TO-247 package format while offering variations in current handling, on-resistance, and power dissipation characteristics.

Substiute Parts

STW12NK80Z

STMicroelectronicsIn Stock: 1574STW12NK80Z Datasheet

Current PartRFQ

IXFH14N80P

IXYSIn Stock: 5983IXFH14N80P Datasheet

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IXFH16N80P

IXYSIn Stock: 20405IXFH16N80P Datasheet

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SPW11N80C3FKSA1

Infineon TechnologiesIn Stock: 3410SPW11N80C3FKSA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STW12NK80Z is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 800V (exact match required)
• Package Type: TO-247-3 or TO-247AD (mechanically compatible through-hole packages)
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Operating Temperature Range: -55°C to 150°C (minimum requirement)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 10.5A
• On-Resistance (Rds On): Equal to or lower than 750mOhm (lower values indicate improved performance)
• Gate Charge (Qg): Variation permitted; lower values reduce switching losses
• Power Dissipation: Equal to or greater than 190W (higher values indicate improved thermal capability)
• Input Capacitance (Ciss): Variation permitted; affects switching characteristics

The three substitute parts listed (IXFH14N80P, IXFH16N80P, and SPW11N80C3FKSA1) meet all mandatory criteria and provide enhanced or equivalent performance in current handling and thermal management while maintaining the same voltage class and package compatibility.

Parameter Comparison

Engineering Selection Recommendations

STW12NK80Z (Primary Component)

The STW12NK80Z remains the primary selection for new designs. This component is in active production status with established supply chain availability (1530 units in stock). It meets all ROHS3 compliance requirements and carries REACH unaffected status. The SuperMESH™ series technology provides optimized performance for the specified 800V/10.5A operating point.

IXFH14N80P (IXYS)

The IXFH14N80P is suitable as a direct substitute when higher current capacity is required or when IXYS component qualification is mandated. This device offers 14A continuous drain current with improved on-resistance (720mOhm versus 750mOhm) and significantly higher power dissipation capability (400W versus 190W). The component is in active production status with superior inventory availability (5910 units). The TO-247AD package is mechanically compatible with TO-247-3 footprints. Gate charge is reduced to 61nC, resulting in lower switching losses.

IXFH16N80P (IXYS)

The IXFH16N80P provides the highest current rating (16A) and lowest on-resistance (600mOhm) among the substitute options, with the highest power dissipation rating (460W). This component is in active production status with the largest inventory availability (20326 units). Selection of this part is appropriate when thermal margin or current headroom is a design priority. The TO-247AD package maintains mechanical compatibility.

SPW11N80C3FKSA1 (Infineon Technologies)

The SPW11N80C3FKSA1 is designated as "Not For New Designs" and should not be selected for new product development. This component is included in the substitute list for reference in legacy system maintenance or repair applications only. While it offers the lowest on-resistance (450mOhm) and uses the CoolMOS™ technology platform, its discontinued design status and lower power dissipation rating (156W) make it unsuitable for new implementations. The maximum gate voltage is limited to ±20V compared to ±30V for other options.

Frequently Asked Questions (FAQ)

Q: Can I use IXFH14N80P or IXFH16N80P as direct replacements for STW12NK80Z in existing PCB layouts?

A: The IXFH14N80P and IXFH16N80P use the TO-247AD package variant, which is mechanically compatible with TO-247-3 footprints. Pin assignments and lead spacing are identical. However, verify that your PCB layout accommodates the slightly different package outline dimensions. Electrical substitution is valid; the higher current ratings and lower on-resistance values provide equivalent or improved performance.

Q: What is the significance of the on-resistance (Rds On) difference between these parts?

A: On-resistance directly affects power dissipation during conduction. Lower Rds On values reduce I²R losses. The STW12NK80Z has 750mOhm Rds On, while IXFH16N80P has 600mOhm. In applications operating at or near the 10.5A rating, the IXFH16N80P dissipates less heat. SPW11N80C3FKSA1 has the lowest Rds On at 450mOhm but is not recommended for new designs.

Q: Why does SPW11N80C3FKSA1 show "Not For New Designs" status?

A: This designation indicates that Infineon Technologies has discontinued this product line for new applications. While the component may still be available in inventory, the manufacturer does not recommend its use in new product development. Existing systems using this part may continue to source it for maintenance, but new designs should select from active production alternatives.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four components listed (STW12NK80Z, IXFH14N80P, IXFH16N80P, and SPW11N80C3FKSA1) are ROHS3 compliant and carry REACH unaffected status. They are suitable for applications requiring environmental compliance certification.

Q: What is the difference between TO-247-3 and TO-247AD packages?

A: Both are through-hole packages with identical pin assignments and lead spacing. TO-247AD is the IXYS designation for their variant of the TO-247-3 package. The packages are mechanically and electrically interchangeable on standard PCB layouts. Verify specific package outline dimensions in component datasheets if tight mechanical tolerances are critical.

Q: Which substitute part should I select if thermal management is a primary concern?

A: The IXFH16N80P offers the highest power dissipation rating at 460W and the lowest on-resistance at 600mOhm, making it the optimal choice for applications requiring maximum thermal headroom. The IXFH14N80P provides 400W dissipation as a secondary option. Both are in active production status.

Q: Can I use these parts interchangeably in high-frequency switching applications?

A: Gate charge (Qg) affects switching speed and losses. The STW12NK80Z has 87nC gate charge, while IXFH14N80P has 61nC (lower is faster). SPW11N80C3FKSA1 has 85nC. Lower gate charge reduces switching losses and allows higher switching frequencies. Verify that your gate driver circuit can supply the required gate current for your target switching frequency with the selected component.

Q: What inventory considerations should influence my part selection?

A: IXFH16N80P has the highest inventory availability at 20,326 units, followed by IXFH14N80P at 5,910 units. STW12NK80Z has 1,530 units available. If supply chain continuity is critical, IXFH16N80P offers the best long-term availability. SPW11N80C3FKSA1 inventory (3,312 units) should not be considered for new designs due to its discontinued status.