STW12NK60Z Equivalent & Substitute Parts

Part Overview

The STW12NK60Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 10A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is designed for high-voltage switching applications. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	10	A
Power Dissipation (Max)	150	W
Rds On (Max) @ 5A, 10V	640	mOhm
Gate Charge (Qg) @ 10V	59	nC
Input Capacitance (Ciss) @ 25V	1740	pF
Vgs(th) @ 100µA	4.5	V
Operating Temperature (TJ)	150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the STW12NK60Z is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 600V Vdss specification to ensure safe operation in the intended application circuit.

Current Rating: Substitute parts must support a minimum continuous drain current of 10A at 25°C. Parts with higher current ratings (11A or 14A) are acceptable as they provide additional design margin.

Package Compatibility: All substitute parts must use the TO-247-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting.

Technology: All parts are N-Channel MOSFETs using metal-oxide semiconductor technology, ensuring functional equivalence.

Compliance: All substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original part.

The three substitute parts listed—IRFPC50APBF, IRFPC50PBF, and IXFH14N60P—meet these core substitution criteria while offering improved or equivalent electrical performance characteristics.

Parameter Comparison

Parameter	STW12NK60Z	IRFPC50APBF	IRFPC50PBF	IXFH14N60P
Manufacturer	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	IXYS
Vdss (V)	600	600	600	600
Id @ 25°C (A)	10	11	11	14
Power Dissipation (W)	150	180	180	300
Rds On (Max) @ 10V (mOhm)	640 @ 5A	580 @ 6A	600 @ 6A	550 @ 7A
Gate Charge (Qg) @ 10V (nC)	59	70	140	36
Input Capacitance (Ciss) @ 25V (pF)	1740	2100	2700	2500
Vgs(th) (V)	4.5 @ 100µA	4 @ 250µA	4 @ 250µA	5.5 @ 2.5mA
Vgs (Max) (V)	±30	±30	±20	±30
Operating Temperature (°C)	150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247AC	TO-247AC	TO-247AD
Product Status	Obsolete	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IRFPC50APBF is suitable for direct substitution where the original STW12NK60Z is no longer available. This part maintains the 600V voltage rating and exceeds the 10A current requirement with 11A capability. The active product status ensures long-term availability. The lower on-resistance (580mOhm vs. 640mOhm) and extended operating temperature range (-55°C to 150°C) provide improved thermal performance. RoHS3 compliance and REACH unaffected status match the original part's regulatory standing.

IRFPC50PBF provides equivalent voltage and current specifications to IRFPC50APBF with active product status. This variant exhibits slightly higher on-resistance (600mOhm) and gate charge (140nC), which may impact switching efficiency in high-frequency applications. The maximum gate voltage is limited to ±20V compared to ±30V on the original part. This part is suitable for applications where the reduced gate voltage specification does not conflict with circuit design requirements.

IXFH14N60P offers the highest current rating (14A) and power dissipation capability (300W) among the substitute options. The significantly lower gate charge (36nC) enables faster switching transitions. The higher input capacitance (2500pF) and threshold voltage (5.5V) differ from the original part. This device is appropriate for applications requiring enhanced thermal headroom and improved switching performance, provided that gate drive circuitry can accommodate the higher threshold voltage.

All three substitute parts are active products with confirmed inventory availability and full RoHS3 compliance, ensuring regulatory compliance and procurement continuity.

Frequently Asked Questions (FAQ)

Q: Can IRFPC50APBF directly replace STW12NK60Z in existing designs?

A: Yes. Both parts share the same 600V voltage rating, TO-247-3 package footprint, and through-hole mounting configuration. The IRFPC50APBF exceeds the 10A current requirement and provides lower on-resistance, making it a direct functional substitute. No PCB layout modifications are required.

Q: What is the difference between IRFPC50APBF and IRFPC50PBF?

A: Both parts have identical voltage and current ratings. The primary differences are gate charge (70nC vs. 140nC), input capacitance (2100pF vs. 2700pF), and maximum gate voltage (±30V vs. ±20V). IRFPC50APBF is preferred for applications requiring lower gate charge and higher gate voltage tolerance.

Q: Why does IXFH14N60P have a higher gate charge specification than IRFPC50APBF despite lower measured gate charge?

A: The IXFH14N60P specifies gate charge at 36nC, which is lower than both Vishay parts. This reflects the device's superior switching characteristics. The higher current rating (14A) and power dissipation (300W) indicate a larger die, which typically results in lower gate charge density.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. IRFPC50APBF, IRFPC50PBF, and IXFH14N60P are all RoHS3 compliant and REACH unaffected, matching the regulatory status of the original STW12NK60Z.

Q: Can IRFPC50PBF be used in high-frequency switching applications?

A: IRFPC50PBF can be used in high-frequency applications, but the higher gate charge (140nC) compared to IRFPC50APBF (70nC) will result in increased switching losses. For frequency-sensitive designs, IRFPC50APBF or IXFH14N60P are preferred options.

Q: What is the impact of the ±20V gate voltage limit on IRFPC50PBF?

A: The ±20V limit is sufficient for standard gate drive circuits operating at ±15V or lower. If the application requires ±30V gate drive capability, IRFPC50APBF or IXFH14N60P must be selected instead.

Q: Are the TO-247AC and TO-247AD packages mechanically compatible with TO-247-3?

A: Yes. TO-247AC and TO-247AD are mechanical variants of the TO-247-3 package family. All three use identical lead spacing and heatsink mounting configurations, ensuring compatibility with existing PCB layouts and thermal management solutions.

Q: Which substitute part offers the best thermal performance?

A: IXFH14N60P provides the highest power dissipation rating (300W) and lowest on-resistance (550mOhm @ 7A), making it the optimal choice for thermally demanding applications. However, this part requires verification that gate drive circuitry can accommodate the 5.5V threshold voltage.

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