STW11NK100Z Equivalent & Substitute Parts

Part Overview

The STW11NK100Z is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 1000V drain-to-source voltage with a continuous drain current of 8.3A at 25°C. This device is housed in a TO-247-3 through-hole package and is part of the SuperMESH™ series. The component is currently in active production status with 2416 units available in stock.

Equivalent and substitute parts are identified when alternative components meet the same electrical and mechanical specifications, allowing for design flexibility, supply chain alternatives, or inventory management across manufacturing environments.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	8.3	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.38	Ohm @ 4.15A, 10V
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STW11NK100Z is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

FET Type: N-Channel topology
Drain to Source Voltage (Vdss): 1000V rating
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C
RoHS Compliance: ROHS3 Compliant status

Performance Parameters for Substitution Consideration:

Continuous Drain Current (Id): Minimum 6.1A at 25°C
On-State Resistance (Rds On): Maximum 2.0 Ohm at specified conditions
Power Dissipation: Minimum 190W capability
Gate Charge (Qg): Maximum 190 nC at 10V

The IRFPG50PBF from Vishay Siliconix meets the critical matching parameters and operates within the allowed electrical performance envelope for this product category.

Parameter Comparison

Parameter	STW11NK100Z (STMicroelectronics)	IRFPG50PBF (Vishay Siliconix)	Unit
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	1000	1000	V
Current - Continuous Drain (Id) @ 25°C	8.3	6.1	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	1.38 @ 4.15A, 10V	2.0 @ 3.6A, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	162	190	nC @ 10V
Power Dissipation (Max)	230	190	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-247AC	Through Hole
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

Both the STW11NK100Z and IRFPG50PBF are active production components with ROHS3 compliance and REACH unaffected status, meeting current regulatory requirements for electronic component manufacturing and distribution.

The STW11NK100Z provides higher continuous drain current (8.3A versus 6.1A) and lower on-state resistance (1.38 Ohm versus 2.0 Ohm), resulting in superior current handling and reduced conduction losses. The STW11NK100Z also offers higher maximum power dissipation (230W versus 190W).

The IRFPG50PBF operates within the same voltage class (1000V) and temperature range (-55°C to 150°C), with compatible gate charge characteristics (190 nC versus 162 nC). Both devices are housed in TO-247 through-hole packages suitable for high-power applications.

Selection between these components depends on application current requirements, thermal management capabilities, and performance specifications. The STW11NK100Z is preferred for applications requiring maximum current capacity and efficiency. The IRFPG50PBF serves as an alternative when supply constraints or design flexibility necessitate component substitution within the 1000V N-Channel MOSFET category.

Frequently Asked Questions (FAQ)

Q: Can the IRFPG50PBF directly replace the STW11NK100Z in all applications?

A: The IRFPG50PBF is electrically compatible for applications operating at or below 6.1A continuous drain current. Applications requiring the full 8.3A rating of the STW11NK100Z require design verification. Both devices share identical voltage ratings (1000V), temperature ranges (-55°C to 150°C), and regulatory compliance status.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are continuous drain current (STW11NK100Z: 8.3A; IRFPG50PBF: 6.1A), on-state resistance (STW11NK100Z: 1.38 Ohm; IRFPG50PBF: 2.0 Ohm), and maximum power dissipation (STW11NK100Z: 230W; IRFPG50PBF: 190W). Both devices operate at 1000V and share compatible gate charge and input capacitance characteristics.

Q: Are the TO-247-3 and TO-247AC packages mechanically interchangeable?

A: Both packages are TO-247 through-hole configurations with compatible pin layouts for high-power applications. Physical dimensions and mounting characteristics are equivalent for PCB assembly and thermal management purposes.

Q: Do both components meet current regulatory compliance requirements?

A: Yes. Both the STW11NK100Z and IRFPG50PBF are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings, meeting current electronic component manufacturing and distribution standards.

Q: What is the impact of the higher on-state resistance in the IRFPG50PBF?

A: The IRFPG50PBF exhibits 2.0 Ohm on-state resistance compared to 1.38 Ohm in the STW11NK100Z. This results in increased conduction losses and heat generation at equivalent current levels. Thermal design and heat dissipation capacity must account for this difference in applications operating near maximum current ratings.

Q: Can these devices be used interchangeably in switching power supply designs?

A: Interchangeability depends on circuit current requirements and thermal management. The STW11NK100Z is suitable for designs requiring full 8.3A capacity. The IRFPG50PBF is suitable for designs operating at 6.1A or below. Both devices share identical switching characteristics and gate drive requirements at 10V.

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