STULED656 N-Channel MOSFET 650V 6A Equivalent & Substitute Parts

Part Overview

The STULED656 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in a Through Hole TO-251 (IPAK) configuration and is designed for high-voltage switching applications requiring 70W maximum power dissipation.

The STULED656 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	6	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 2.7A, 10V	Ohm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5	V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	34	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	895	pF @ 100V
Power Dissipation (Max)	70	W
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the STULED656 is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following parameters establish the substitution criteria:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 650V minimum
Mounting Type: Through Hole
Package Family: TO-251 (IPAK) configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Functional Compatibility Parameters:

Continuous Drain Current (Id): Must support application requirements
Drive Voltage: 10V gate drive compatibility
Gate Threshold Voltage (Vgs(th)): Operating range compatibility
Power Dissipation: Thermal management capability
RoHS and REACH Compliance: Regulatory alignment

The IPS65R950C6AKMA1 from Infineon Technologies meets the voltage and package requirements. However, substitution analysis must account for differences in continuous drain current rating, on-resistance characteristics, and gate charge specifications.

Parameter Comparison

Parameter	STULED656 (STMicroelectronics)	IPS65R950C6AKMA1 (Infineon Technologies)	Unit
Drain to Source Voltage (Vdss)	650	650	V
Continuous Drain Current (Id) @ 25°C	6	4.5	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	1.3 @ 2.7A, 10V	0.95 @ 1.5A, 10V	Ohm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5 @ 50µA	3.5 @ 200µA	V
Gate Charge (Qg) (Max) @ Vgs	34 @ 10V	15.3 @ 10V	nC
Maximum Gate Voltage (Vgs Max)	±30	±20	V
Input Capacitance (Ciss) (Max) @ Vds	895 @ 100V	328 @ 100V	pF
Power Dissipation (Max)	70	37	W
Operating Temperature (TJ)	150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak	TO-251-3 Stub Leads, IPak	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

STULED656 (STMicroelectronics) — Primary Reference

The STULED656 is the original component specification. Both the main part and identified substitute carry Obsolete product status, indicating end-of-life designation from manufacturers. Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for new designs or legacy system support.

IPS65R950C6AKMA1 (Infineon Technologies) — Substitute Consideration

The IPS65R950C6AKMA1 shares identical voltage rating (650V Vdss) and Through Hole TO-251 package family, establishing mechanical and electrical compatibility at the system level. However, the following parameter differences require evaluation:

Continuous Drain Current: The IPS65R950C6AKMA1 is rated for 4.5A continuous drain current, compared to 6A for the STULED656. Applications requiring the full 6A rating cannot use this substitute without thermal or circuit redesign.
Power Dissipation: Maximum power dissipation is 37W for the IPS65R950C6AKMA1 versus 70W for the STULED656, reflecting reduced thermal capacity.
On-Resistance (Rds On): The IPS65R950C6AKMA1 exhibits lower on-resistance (0.95 Ohm @ 1.5A, 10V) compared to the STULED656 (1.3 Ohm @ 2.7A, 10V), providing improved efficiency at lower current levels.
Gate Charge: The IPS65R950C6AKMA1 has significantly lower gate charge (15.3 nC @ 10V) versus 34 nC @ 10V for the STULED656, enabling faster switching characteristics.
Maximum Gate Voltage: The IPS65R950C6AKMA1 is rated for ±20V maximum gate voltage, compared to ±30V for the STULED656. Gate drive circuits must operate within the lower voltage range.

Substitution is applicable only to applications where continuous drain current requirements do not exceed 4.5A and thermal dissipation does not exceed 37W. Both devices maintain identical regulatory compliance status.

Frequently Asked Questions (FAQ)

Q: Can the IPS65R950C6AKMA1 directly replace the STULED656 in all applications?

A: No. The IPS65R950C6AKMA1 has a lower continuous drain current rating (4.5A versus 6A) and reduced maximum power dissipation (37W versus 70W). Direct substitution is limited to applications operating within these reduced specifications. Applications requiring the full 6A rating or 70W dissipation capability require alternative solutions.

Q: What is the significance of the different lead styles (Short Leads versus Stub Leads) in the TO-251 package?

A: Both devices use the TO-251-3 (IPAK) package family with Through Hole mounting. The lead style difference (Short Leads for STULED656 versus Stub Leads for IPS65R950C6AKMA1) affects PCB layout and thermal interface characteristics. Mechanical compatibility with existing PCB designs must be verified before substitution.

Q: Are both parts RoHS compliant?

A: Yes. Both the STULED656 and IPS65R950C6AKMA1 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: What does Obsolete product status mean for component selection?

A: Obsolete status indicates that the manufacturer has discontinued production and support for the component. Both the STULED656 and IPS65R950C6AKMA1 carry this designation. Component selection must account for limited availability and the necessity of identifying alternatives for future production requirements.

Q: How do the gate charge differences affect circuit design?

A: The IPS65R950C6AKMA1 has significantly lower gate charge (15.3 nC @ 10V) compared to the STULED656 (34 nC @ 10V). Lower gate charge enables faster switching transitions and reduces gate drive power requirements. Gate drive circuits designed for the STULED656 will operate with improved performance characteristics when driving the IPS65R950C6AKMA1, but no circuit modification is required for basic functionality.

Q: What is the maximum gate voltage difference between these parts?

A: The STULED656 supports ±30V maximum gate voltage, while the IPS65R950C6AKMA1 is rated for ±20V. Gate drive circuits must be designed to operate within the lower ±20V limit when using the IPS65R950C6AKMA1 as a substitute.

Q: Can the IPS65R950C6AKMA1 be used in high-temperature applications?

A: Both devices support operating junction temperatures up to 150°C. The IPS65R950C6AKMA1 additionally specifies a minimum operating temperature of -55°C, providing extended low-temperature capability compared to the STULED656.

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