STU6N65M2-S N-Channel 650V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The STU6N65M2-S is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 650V drain-to-source voltage with 4A continuous drain current at 25°C. This device is part of the MDmesh™ M2 series and is housed in a Through Hole I-PAK (TO-251-3) package. The component is currently in active production status with 783 pieces available in new original inventory.

Identifying equivalent and substitute parts is necessary when primary inventory is depleted, when supply chain constraints affect availability, or when design flexibility permits selection from qualified alternatives that maintain identical electrical and mechanical performance characteristics.

Substiute Parts

STU6N65M2-S

STMicroelectronicsIn Stock: 846STU6N65M2-S Datasheet

Current PartRFQ

STU6N65M2

STMicroelectronicsIn Stock: 3944STU6N65M2 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STU6N65M2-S is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): 650V
• Continuous Drain Current (Id) @ 25°C: 4A (Tc)
• On-State Resistance (Rds On Max): 1.35 Ohm @ 2A, 10V
• Gate Threshold Voltage (Vgs(th) Max): 4V @ 250µA
• Gate Charge (Qg Max): 9.8 nC @ 10V
• Input Capacitance (Ciss Max): 226 pF @ 100V
• Power Dissipation (Max): 60W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Equivalence Criteria:

• Package Type: TO-251-3 (I-PAK) Through Hole
• Mounting Type: Through Hole
• Lead Configuration: Short Leads

Compliance Equivalence Criteria:

• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected
• Technology: N-Channel MOSFET (Metal Oxide)

Parts meeting all electrical, mechanical, and compliance parameters are classified as parametric equivalents and direct substitutes.

Parameter Comparison

Engineering Selection Recommendations

STU6N65M2 as Direct Substitute:

The STU6N65M2 is a parametric equivalent to the STU6N65M2-S. Both devices are manufactured by STMicroelectronics and share identical electrical specifications across all critical parameters: 650V Vdss, 4A continuous drain current, 1.35 Ohm Rds On, and 60W power dissipation. Both components are housed in the TO-251-3 (I-PAK) Through Hole package with identical lead configuration.

Both parts maintain active product status and carry ROHS3 compliance certification with REACH Unaffected status. The operating temperature range of -55°C to 150°C (TJ) is identical for both devices. Gate charge, input capacitance, and threshold voltage specifications are equivalent across both part numbers.

The STU6N65M2 is available with higher inventory (3925 pieces) compared to the STU6N65M2-S (783 pieces), making it a viable alternative when supply constraints affect primary part availability. No design modifications, circuit adjustments, or thermal management changes are required when substituting between these two part numbers.

Frequently Asked Questions (FAQ)

Q: Can the STU6N65M2 be used as a direct replacement for the STU6N65M2-S in existing designs?

A: Yes. The STU6N65M2 is a parametric equivalent with identical electrical and mechanical specifications. No circuit modifications are required. Both devices are pin-compatible in the TO-251-3 (I-PAK) Through Hole package and share identical performance characteristics across all rated parameters.

Q: Are there differences in the series designation between STU6N65M2-S and STU6N65M2?

A: The STU6N65M2-S is designated as part of the MDmesh™ M2 series, while the STU6N65M2 is designated as part of the MDmesh™ series. Despite this series designation difference, both devices maintain identical electrical specifications and are manufactured by STMicroelectronics using the same MOSFET (Metal Oxide) technology.

Q: What are the key parameters that determine substitution eligibility for this MOSFET?

A: Substitution eligibility is determined by equivalence in: Drain to Source Voltage (650V), Continuous Drain Current (4A @ 25°C), On-State Resistance (1.35 Ohm @ 2A, 10V), Gate Threshold Voltage (4V @ 250µA), Gate Charge (9.8 nC @ 10V), Input Capacitance (226 pF @ 100V), Power Dissipation (60W), Operating Temperature Range (-55°C to 150°C), and package type (TO-251-3 Through Hole).

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the STU6N65M2-S and STU6N65M2 are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: What is the difference in available inventory between these two parts?

A: The STU6N65M2-S has 783 pieces in new original inventory, while the STU6N65M2 has 3925 pieces available. The higher inventory level of the STU6N65M2 makes it a practical alternative when supply availability is a consideration.

Q: Are the package dimensions and lead configurations identical?

A: Yes. Both devices use the TO-251-3 (I-PAK) Through Hole package with short leads. The mechanical footprint, lead spacing, and mounting requirements are identical, allowing direct board-level substitution without PCB redesign.