STU6N60M2 Equivalent & Substitute Parts

Part Overview

The STU6N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 600V drain-to-source voltage with 4.5A continuous drain current at 25°C. This device is packaged in TO-251 (IPAK) through-hole configuration and is part of the MDmesh™ II Plus series. The component is currently in Active product status with 1500 pieces available in stock.

Substitute parts become necessary when the primary component reaches end-of-life status, inventory constraints occur, or design flexibility is required across multiple qualified suppliers. The STU6N60M2 has one identified equivalent substitute that maintains functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

STU6N60M2

STMicroelectronicsIn Stock: 1558STU6N60M2 Datasheet

Current PartRFQ

FCU900N60Z

onsemiIn Stock: 22951FCU900N60Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the STU6N60M2 is determined by strict alignment of the following critical parameters:

Voltage Rating: Drain-to-source voltage (Vdss) must equal 600V to ensure safe operation within the same circuit topology.

Current Rating: Continuous drain current (Id) at 25°C must equal or exceed 4.5A to support the same load conditions.

Package Type: Through-hole TO-251 (IPAK) configuration is mandatory for mechanical and thermal compatibility with existing PCB layouts.

FET Technology: N-Channel MOSFET topology must be maintained.

Operating Temperature Range: Must support the full -55°C to 150°C junction temperature range.

The FCU900N60Z manufactured by onsemi meets all substitution criteria. This device maintains identical voltage and current ratings, uses the same TO-251 (IPAK) through-hole package, and operates across the required temperature range. Electrical parameter variations within the substitute part remain within acceptable design margins for most applications.

Parameter Comparison

Engineering Selection Recommendations

STU6N60M2 (Primary Selection): This component is in Active product status with 1500 pieces currently in stock. It is the preferred choice for new designs and applications requiring long-term availability. Full RoHS3 compliance and REACH unaffected status confirm regulatory alignment. The device offers superior on-state resistance (1.2Ohm) and lower gate charge (13.5nC), resulting in improved efficiency and faster switching characteristics.

FCU900N60Z (Substitute Selection): This onsemi equivalent is available with significantly higher inventory (22900 pieces) but carries Last Time Buy product status. Selection of this substitute is appropriate when STU6N60M2 availability is constrained or when design flexibility across multiple suppliers is required. The substitute maintains full voltage and current ratings with identical operating temperature range. RoHS3 and REACH compliance certifications match the primary part. The FCU900N60Z exhibits lower on-state resistance (0.9Ohm) but higher gate charge (17nC) and input capacitance (710pF), which may affect switching speed and gate drive requirements in high-frequency applications.

Both parts carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming equivalent export and tariff treatment.

Frequently Asked Questions (FAQ)

Q: Can the FCU900N60Z directly replace the STU6N60M2 in existing designs?

A: Yes. Both devices maintain identical 600V drain-to-source voltage, 4.5A continuous drain current, and TO-251 (IPAK) through-hole package configuration. The operating temperature range (-55°C to 150°C) is identical. PCB layout and thermal management requirements remain unchanged. However, the FCU900N60Z exhibits different on-state resistance (0.9Ohm vs. 1.2Ohm) and gate charge (17nC vs. 13.5nC) characteristics, which may require gate drive circuit evaluation in applications with tight switching speed or power dissipation margins.

Q: What are the key electrical differences between these parts?

A: The FCU900N60Z offers lower on-state resistance (0.9Ohm) compared to the STU6N60M2 (1.2Ohm), reducing conduction losses. However, the FCU900N60Z has higher gate charge (17nC vs. 13.5nC) and significantly higher input capacitance (710pF vs. 232pF), which increases gate drive power requirements and may slow switching transitions. The FCU900N60Z also has a lower maximum gate voltage rating (±20V vs. ±25V).

Q: Are both parts RoHS and REACH compliant?

A: Yes. Both the STU6N60M2 and FCU900N60Z are RoHS3 compliant and REACH unaffected, confirming compliance with current environmental and chemical restriction regulations.

Q: Why is the FCU900N60Z marked as Last Time Buy?

A: Last Time Buy status indicates that onsemi has announced end-of-life for this product line. While inventory is currently available (22900 pieces), future availability is not guaranteed. This status does not affect the technical suitability of the part for substitution but should be considered for long-term supply chain planning.

Q: What package variations exist between these parts?

A: Both parts use TO-251 (IPAK) through-hole packaging. The STU6N60M2 specifies TO-251-3 Short Leads configuration, while the FCU900N60Z uses TO-251-3 Stub Leads configuration. These lead length variations are minor and do not affect PCB compatibility for standard through-hole designs, though thermal and mechanical stress characteristics may differ slightly.

Q: Which part should be selected for new product designs?

A: The STU6N60M2 is the recommended choice for new designs due to its Active product status and confirmed long-term availability. The FCU900N60Z is suitable as a secondary source or for designs where the lower on-state resistance provides measurable performance benefits and gate drive circuit modifications are acceptable.