Equivalent & Substitute Parts Reference for STU60N55F3

Part Overview

The STU60N55F3 is an N-Channel MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage (Vdss) of 55V, a continuous drain current (Id) of 80A at 25°C, and a maximum power dissipation of 110W (Tc), with a TO-251AA I-PAK through-hole package. This device is part of the STripFET™ III series and is designated as obsolete. Due to its product status, it is necessary to identify alternative model numbers that meet the required specifications for ongoing designs or replacement needs.

Key Parameters

Parameter	STU60N55F3
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 25 V
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitutability is determined strictly based on the following allowed electrical and mechanical parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, package/case, RoHS status, moisture sensitivity level, REACH status, and ECCN. Only substitute models matching these criteria, as provided, are included.

Parameter Comparison

Parameter	STU60N55F3 (Main)	IRFU3607PBF (Substitute)
Manufacturer	STMicroelectronics	Infineon Technologies
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	75 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 32A, 10V	9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V	84 nC @ 10 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 25 V	3070 pF @ 50 V
Power Dissipation (Max)	110W (Tc)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole
Supplier Device Package	I-PAK	IPAK (TO-251AA)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99

Engineering Selection Recommendations

Due to the obsolete status of STU60N55F3, substitute part IRFU3607PBF is identified based on compliance with ROHS3, REACH unaffected status, ECCN EAR99, and equivalent moisture sensitivity level (MSL: 1). Package/case and mounting type parameters match exactly and both are suitable for through-hole assembly. Engineering selection should strictly follow provided certifications and compliance data.

Frequently Asked Questions (FAQ)

Q1: What parameters dictate allowable substitution for the STU60N55F3 MOSFET?
A1: Key substitution parameters are FET type, technology, drain-to-source voltage (Vdss), current rating (Id), drive voltage, Rds On, threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), power dissipation, operating temperature, mounting type, package/case, RoHS status, MSL, REACH status, and ECCN.

Q2: Are package/case specifications matched between STU60N55F3 and IRFU3607PBF?
A2: Both parts employ the TO-251AA (IPAK) through-hole package/case type, ensuring mechanical compatibility.

Q3: Is compliance (RoHS, REACH, ECCN, MSL) maintained for substitute parts?
A3: Both STU60N55F3 and IRFU3607PBF are ROHS3 compliant, REACH unaffected, have MSL 1 (Unlimited), and assigned ECCN EAR99.

Q4: Are there differences in electrical parameters between the main and substitute parts?
A4: Differences exist in Vdss, Id, Rds On, gate charge, and input capacitance. All values are listed in the comparison table for direct engineering evaluation.

Q5: What mounting options are available for the substitute model?
A5: IRFU3607PBF utilizes a through-hole mounting type, consistent with the STU60N55F3.

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