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STTH802CFP Equivalent & Substitute Parts
Part Overview
The STTH802CFP is a diode array rectifier manufactured by STMicroelectronics, configured as a 1 Pair Common Cathode with 200 V reverse voltage rating and 4 A average rectified current per diode. The device is packaged in TO-220-3 Full Pack through-hole format and features fast recovery characteristics with 20 ns reverse recovery time.
The STTH802CFP is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this diode array configuration.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Diode Configuration | 1 Pair Common Cathode | — |
| Voltage - DC Reverse (Vr) (Max) | 200 | V |
| Current - Average Rectified (Io) (per Diode) | 4 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 4 A | — |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | — |
| Reverse Recovery Time (trr) | 20 | ns |
| Current - Reverse Leakage @ Vr | 4 | µA @ 200 V |
| Operating Temperature - Junction (Max) | 175 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3 Full Pack | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the STTH802CFP is determined by strict adherence to the following electrical and mechanical parameters:
Critical Substitution Parameters:
- Diode Configuration: 1 Pair Common Cathode (mandatory match)
- Voltage - DC Reverse (Vr) (Max): 200 V (mandatory match)
- Mounting Type: Through Hole (mandatory match)
- Package / Case: TO-220-3 Full Pack (mandatory match)
Allowable Variation Parameters:
- Current - Average Rectified (Io) (per Diode): Equal to or greater than 4 A
- Voltage - Forward (Vf) (Max) @ If: Equal to or less than 1.1 V at rated current
- Reverse Recovery Time (trr): Equal to or less than 20 ns
- Current - Reverse Leakage @ Vr: Equal to or less than 4 µA @ 200 V
- Operating Temperature - Junction (Max): Equal to or greater than 175°C
Substitute parts meeting all critical parameters and maintaining allowable variations in electrical characteristics are classified as direct equivalents. Parts exceeding current ratings or improving recovery characteristics provide enhanced performance margins within the same form factor and electrical class.
Parameter Comparison
| Parameter | STTH802CFP | MURF1620CTG | RF1001T2D | RF1601T2D | RF601T2D | SBR10200CTFP | SBR20A200CTFP | FFPF20UP20DNTU |
|---|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | onsemi | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Diodes Incorporated | Diodes Incorporated | onsemi |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) (per Diode) | 4 A | 8 A | 5 A | 8 A | 3 A | 5 A | 10 A | 10 A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 4 A | 975 mV @ 8 A | 930 mV @ 5 A | 930 mV @ 8 A | 930 mV @ 3 A | 900 mV @ 5 A | 860 mV @ 10 A | 1.15 V @ 10 A |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns | 35 ns | 30 ns | 30 ns | 25 ns | 20 ns | 30 ns | 45 ns |
| Current - Reverse Leakage @ Vr | 4 µA @ 200 V | 5 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V | 10 µA @ 200 V | 100 µA @ 200 V | 100 µA @ 200 V | 100 µA @ 200 V |
| Operating Temperature - Junction (Max) | 175°C | 150°C | 150°C | 150°C | 150°C | 150°C | 175°C | 150°C |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active | Obsolete |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Substitutes (Active Product Status):
MURF1620CTG (onsemi) is the preferred substitute for new designs and ongoing production. This part maintains identical voltage and configuration specifications while providing doubled current capacity (8 A versus 4 A) and improved forward voltage characteristics (975 mV @ 8 A). The MURF1620CTG is classified as Active product status and carries SWITCHMODE™ series designation, ensuring long-term availability and supply chain stability.
SBR20A200CTFP (Diodes Incorporated) provides equivalent substitution with enhanced current rating (10 A) and superior forward voltage performance (860 mV @ 10 A). This part maintains the maximum junction temperature of 175°C, matching the STTH802CFP thermal specification. The isolated tab package variant (ITO-220AB) offers additional design flexibility for thermal management applications. Product status is Active.
SBR10200CTFP (Diodes Incorporated) serves as a mid-range substitute with 5 A current capacity and 900 mV forward voltage @ 5 A. This part maintains 20 ns reverse recovery time, matching the STTH802CFP specification exactly. Product status is Active.
Secondary Substitutes (Active Product Status):
RF1001T2D (Rohm Semiconductor) provides 5 A current capacity with 930 mV forward voltage and 30 ns reverse recovery time. Product status is Active.
RF1601T2D (Rohm Semiconductor) offers 8 A current capacity with 930 mV forward voltage and 30 ns reverse recovery time. Product status is Active.
RF601T2D (Rohm Semiconductor) provides 3 A current capacity, suitable for applications with reduced current requirements. Forward voltage is 930 mV @ 3 A with 25 ns reverse recovery time. Product status is Active.
Compliance Considerations:
All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, consistent with the STTH802CFP regulatory classification. All parts are classified under HTSUS code 8541.10.0080 and ECCN EAR99.
Frequently Asked Questions (FAQ)
Q: Can MURF1620CTG directly replace STTH802CFP in existing designs?
A: MURF1620CTG meets all critical substitution parameters: identical 200 V reverse voltage rating, 1 Pair Common Cathode configuration, TO-220-3 Full Pack through-hole package, and fast recovery characteristics. The 8 A current rating exceeds the 4 A requirement, providing design margin. Forward voltage is 975 mV @ 8 A, which is lower than the STTH802CFP specification of 1.1 V @ 4 A. Reverse recovery time is 35 ns, which exceeds the 20 ns specification but remains within fast recovery classification. MURF1620CTG is Active product status, ensuring supply availability.
Q: What is the difference between standard TO-220-3 Full Pack and isolated tab variants?
A: SBR10200CTFP and SBR20A200CTFP are supplied in ITO-220AB package format, which includes an isolated tab. This variant provides electrical isolation between the mounting tab and the diode circuit, enabling direct mounting to a common heat sink without additional isolation hardware. Standard TO-220-3 Full Pack variants (STTH802CFP, MURF1620CTG, RF series) require isolation hardware if the tab must be electrically isolated from the heat sink. Both package variants maintain identical electrical performance and footprint compatibility.
Q: Are there current rating limitations when substituting with higher-rated parts?
A: Substitute parts with current ratings exceeding 4 A (such as MURF1620CTG at 8 A or SBR20A200CTFP at 10 A) are fully compatible with applications designed for the STTH802CFP. Higher current ratings provide additional design margin and do not create compatibility issues. The application circuit determines actual current flow; the diode rating establishes the maximum allowable current. Lower-rated substitutes (such as RF601T2D at 3 A) are not suitable for applications requiring 4 A operation.
Q: How do forward voltage differences affect circuit performance?
A: Forward voltage variations between substitute parts affect power dissipation and voltage drop across the diode. STTH802CFP specifies 1.1 V @ 4 A. Substitute parts with lower forward voltage (such as SBR20A200CTFP at 860 mV @ 10 A or SBR10200CTFP at 900 mV @ 5 A) reduce power dissipation and heat generation. Substitute parts with comparable or slightly higher forward voltage (such as FFPF20UP20DNTU at 1.15 V @ 10 A) maintain similar thermal characteristics. Circuit designs with tight voltage margin specifications require forward voltage verification at the actual operating current.
Q: What is the significance of reverse recovery time differences?
A: STTH802CFP specifies 20 ns reverse recovery time. Substitute parts with equal or lower reverse recovery time (SBR10200CTFP at 20 ns) provide identical switching performance. Parts with higher reverse recovery time (MURF1620CTG at 35 ns, RF series at 25-30 ns, FFPF20UP20DNTU at 45 ns) exhibit slightly slower switching transitions. All listed substitutes maintain fast recovery classification (≤ 500 ns). Applications with stringent EMI requirements or high-frequency switching may require verification of reverse recovery time impact on circuit performance.
Q: Why is product status relevant for component selection?
A: STTH802CFP is classified as Obsolete, indicating discontinued manufacturing and limited supply availability. Active product status substitutes (MURF1620CTG, SBR series, RF series) ensure long-term supply chain continuity, ongoing manufacturing support, and stable pricing. FFPF20UP20DNTU, while listed as a substitute, is also Obsolete and should not be selected for new designs requiring long-term availability.
Q: Are there thermal performance differences between substitute parts?
A: STTH802CFP specifies maximum junction temperature of 175°C. SBR20A200CTFP maintains this 175°C specification. MURF1620CTG, RF series, SBR10200CTFP, and FFPF20UP20DNTU specify 150°C maximum junction temperature. Applications operating near thermal limits require verification that the 25°C difference does not impact thermal margin. Higher current-rated substitutes (8 A and 10 A) may generate increased heat at equivalent current levels due to forward voltage characteristics; thermal design review is necessary for applications with constrained thermal environments.
Q: Can RF601T2D substitute for STTH802CFP in 4 A applications?
A: RF601T2D is rated for 3 A maximum current, which is below the STTH802CFP 4 A specification. This part is not suitable for applications requiring 4 A operation. RF601T2D is appropriate only for applications with reduced current requirements (3 A or less).
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