STTH30L06G Equivalent & Substitute Parts

Part Overview

The STTH30L06G is a general-purpose rectifier diode manufactured by STMicroelectronics, rated for 600 V DC reverse voltage and 30 A average rectified current in a surface mount D2PAK package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The diode features fast recovery characteristics with a reverse recovery time of 90 ns and operates at junction temperatures up to 175°C.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	30	A
Voltage - Forward (Vf) (Max) @ If	1.55 V @ 30 A	V
Reverse Recovery Time (trr)	90	ns
Current - Reverse Leakage @ Vr	25 µA @ 600 V	µA
Mounting Type	Surface Mount	-
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	-
Operating Temperature - Junction (Max)	175	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the STTH30L06G is determined by the following critical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 600 V minimum
Current - Average Rectified (Io): 30 A minimum
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab) compatible packages
Technology: Standard rectifier diode technology
RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

Reverse Recovery Time (trr): Fast Recovery ≤ 500 ns
Operating Temperature Range: Support for 175°C junction temperature operation
Moisture Sensitivity Level: MSL 1 (Unlimited)

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (600V, 30A): Parts meeting or exceeding the full 30 A current rating with 600 V voltage specification. These parts provide direct functional replacement without circuit redesign.

Category B - Partial Substitutes (600V, Reduced Current): Parts meeting the 600 V voltage specification but with reduced current ratings (10 A or 20 A). These parts require circuit analysis to confirm suitability based on actual application current requirements.

Parameter Comparison

Parameter	STTH30L06G (Main)	DSEP29-06AS-TRL	RFUH10NS6STL	RFUS20NS6STL	SDURB3060CT
Manufacturer	STMicroelectronics	IXYS	Rohm Semiconductor	Rohm Semiconductor	SMC Diode Solutions
Voltage - DC Reverse (Vr) (Max)	600 V	600 V	600 V	600 V	600 V
Current - Average Rectified (Io)	30 A	30 A	10 A	20 A	Per Diode: -
Voltage - Forward (Vf) (Max) @ If	1.55 V @ 30 A	1.61 V @ 30 A	2.8 V @ 10 A	2.8 V @ 20 A	2.03 V @ 15 A
Reverse Recovery Time (trr)	90 ns	35 ns	25 ns	35 ns	50 ns
Current - Reverse Leakage @ Vr	25 µA @ 600 V	250 µA @ 600 V	10 µA @ 600 V	10 µA @ 600 V	100 µA @ 600 V
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Operating Temperature - Junction (Max)	175°C	175°C	150°C	150°C	150°C
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

DSEP29-06AS-TRL (IXYS HiPerFRED™ Series)

The DSEP29-06AS-TRL is the primary equivalent substitute for the STTH30L06G. Both parts share identical voltage (600 V) and current (30 A) ratings with compatible D2PAK packaging. The DSEP29-06AS-TRL is currently in active production status, ensuring long-term availability. Forward voltage is marginally higher (1.61 V vs. 1.55 V at 30 A), representing a 3.9% increase in conduction loss. Reverse recovery time is significantly faster (35 ns vs. 90 ns), providing improved switching performance. The part is ROHS3 compliant with MSL 1 rating. Operating temperature range extends to −55°C, exceeding the STTH30L06G specification. This part is suitable for direct replacement in applications where the higher reverse leakage current (250 µA vs. 25 µA) is acceptable.

RFUS20NS6STL (Rohm Semiconductor LPDS)

The RFUS20NS6STL provides a 20 A rated substitute with 600 V voltage specification. This part is suitable for applications where the actual circuit current requirement does not exceed 20 A. The part is in active production with ROHS3 compliance. Forward voltage at 20 A is 2.8 V, representing higher conduction loss compared to the main part. Reverse recovery time of 35 ns is faster than the STTH30L06G. Operating temperature maximum is 150°C, which is 25°C lower than the main part specification. This part requires circuit analysis to confirm current margin adequacy.

RFUH10NS6STL (Rohm Semiconductor LPDS)

The RFUH10NS6STL is a 10 A rated substitute with 600 V voltage specification. This part is suitable only for applications where circuit current does not exceed 10 A. The part is in active production with ROHS3 compliance. Forward voltage at 10 A is 2.8 V. Reverse recovery time of 25 ns is faster than the main part. Operating temperature maximum is 150°C. This part requires detailed circuit analysis to confirm current margin adequacy.

SDURB3060CT (SMC Diode Solutions)

The SDURB3060CT is a diode array configuration (1 Pair Common Cathode) with 600 V rating. This part is structurally different from the single-diode STTH30L06G and is not a direct functional equivalent. Substitution requires circuit redesign to accommodate the common cathode configuration. The part is in active production with ROHS3 compliance. REACH status is listed as affected, requiring compliance verification for specific applications. This part is suitable only for applications designed for dual-diode common cathode topology.

Frequently Asked Questions (FAQ)

Q: Can the DSEP29-06AS-TRL directly replace the STTH30L06G without circuit modification?

A: Yes. Both parts share identical voltage (600 V) and current (30 A) ratings with compatible D2PAK packaging. Pin configuration and thermal characteristics are compatible. The DSEP29-06AS-TRL is the primary direct equivalent. Forward voltage difference (1.61 V vs. 1.55 V) results in approximately 3.9% higher conduction loss, which is acceptable in most applications. Reverse leakage current is higher (250 µA vs. 25 µA), which may affect applications with stringent leakage specifications.

Q: Why is the RFUS20NS6STL listed as a substitute if it has only 20 A rating versus 30 A?

A: The RFUS20NS6STL is listed as a partial substitute for applications where the actual circuit current requirement does not exceed 20 A. Substitution requires verification that the application current does not exceed the 20 A rating. This part is not suitable for circuits designed to operate at the full 30 A specification of the STTH30L06G.

Q: What is the difference between the RFUH10NS6STL and RFUS20NS6STL?

A: Both parts are Rohm Semiconductor LPDS package diodes with 600 V rating. The primary difference is current rating: RFUH10NS6STL is rated for 10 A, while RFUS20NS6STL is rated for 20 A. Both have identical forward voltage (2.8 V) and similar reverse recovery times (25 ns and 35 ns respectively). Selection between these parts depends on the actual circuit current requirement.

Q: Is the SDURB3060CT a suitable substitute for the STTH30L06G?

A: The SDURB3060CT is not a direct functional equivalent. It is a diode array with 1 Pair Common Cathode configuration, whereas the STTH30L06G is a single diode. Substitution requires circuit redesign to accommodate the dual-diode common cathode topology. This part is suitable only for applications specifically designed for common cathode diode pair operation.

Q: What is the impact of the lower operating temperature maximum (150°C) on the Rohm parts?

A: The RFUH10NS6STL and RFUS20NS6STL have maximum junction temperature ratings of 150°C, compared to 175°C for the STTH30L06G. In applications where the junction temperature approaches or exceeds 150°C, these parts may not be suitable. Circuit thermal analysis is required to confirm that junction temperature remains below 150°C under worst-case operating conditions.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts (DSEP29-06AS-TRL, RFUH10NS6STL, RFUS20NS6STL, and SDURB3060CT) are ROHS3 compliant. The SDURB3060CT has REACH status listed as affected, requiring compliance verification for specific applications or regions.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates that all listed parts meet fast recovery diode classification with reverse recovery time not exceeding 500 ns at forward currents greater than 200 mA. The STTH30L06G has a reverse recovery time of 90 ns, while substitute parts range from 25 ns to 50 ns, all meeting this fast recovery criterion.

Q: Can I use the DSEP29-06AS-TRL in a circuit designed for the STTH30L06G if the application requires low reverse leakage?

A: The DSEP29-06AS-TRL has reverse leakage current of 250 µA at 600 V, compared to 25 µA for the STTH30L06G. If the application has stringent leakage specifications, the higher leakage of the DSEP29-06AS-TRL may not be acceptable. Circuit analysis is required to determine if the 10-fold increase in leakage current affects application performance.

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