STTH302RL Equivalent & Substitute Parts

Part Overview

The STTH302RL is a general-purpose rectifier diode manufactured by STMicroelectronics, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This fast recovery diode features a reverse recovery time of 35 ns and is classified as Active product status with ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design flexibility across multiple suppliers.

Substiute Parts

STTH302RL
STMicroelectronicsIn Stock: 2181STTH302RL Datasheet
STTH302RL
Current Part
STTH302
STMicroelectronicsIn Stock: 1631STTH302 Datasheet
STTH302
Parametric Equivalent
1N5402-G
Comchip TechnologyIn Stock: 9981N5402-G Datasheet
1N5402-G
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1N5402G
Taiwan Semiconductor CorporationIn Stock: 21461N5402G Datasheet
1N5402G
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1N5402RLG
onsemiIn Stock: 37191N5402RLG Datasheet
1N5402RLG
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EGP20A
Fairchild SemiconductorIn Stock: 24889EGP20A Datasheet
EGP20A
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EGP20B
Fairchild SemiconductorIn Stock: 5370EGP20B Datasheet
EGP20B
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EGP20C
Fairchild SemiconductorIn Stock: 4722EGP20C Datasheet
EGP20C
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EGP20D
onsemiIn Stock: 25161EGP20D Datasheet
EGP20D
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EGP30A
Fairchild SemiconductorIn Stock: 4600EGP30A Datasheet
EGP30A
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EGP30B
Fairchild SemiconductorIn Stock: 3473EGP30B Datasheet
EGP30B
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EGP30D
onsemiIn Stock: 25502EGP30D Datasheet
EGP30D
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HER503GP-TP
Micro Commercial CoIn Stock: 5795HER503GP-TP Datasheet
HER503GP-TP
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MUR405G
onsemiIn Stock: 3304MUR405G Datasheet
MUR405G
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MUR420RLG
onsemiIn Stock: 125260MUR420RLG Datasheet
MUR420RLG
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UES1302
Microchip TechnologyIn Stock: 978UES1302 Datasheet
UES1302
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 3 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction (Max) 175 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the STTH302RL are classified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is determined by the following parameters:

Critical Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD or equivalent axial configuration

Secondary Compatibility Factors:

  • Forward voltage drop (Vf) at rated current
  • Recovery speed classification (Fast Recovery vs. Standard Recovery)
  • Reverse recovery time (trr)
  • Reverse leakage current
  • Operating temperature range
  • RoHS and regulatory compliance

Parts are grouped into two categories:

Category 1: Parametric Equivalents — Parts with identical or superior electrical ratings and matching package specifications. These parts satisfy all critical parameters without derating.

Category 2: Similar Substitutes — Parts with matching voltage and current ratings but differing in recovery speed, package variant, or secondary electrical characteristics. These parts require application-level compatibility verification based on circuit requirements.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Speed trr [ns] Ir @ Vr [µA] Package Product Status
STTH302RL STMicroelectronics 200 3 950 @ 3A Fast Recovery ≤ 500ns 35 3 @ 200V DO-201AD Active
STTH302 STMicroelectronics 200 3 950 @ 3A Fast Recovery ≤ 500ns 35 3 @ 200V DO-201AD Active
1N5402-G Comchip Technology 200 3 1000 @ 3A Standard Recovery > 500ns 5 @ 200V DO-201AD Active
1N5402G Taiwan Semiconductor Corporation 200 3 1000 @ 3A Standard Recovery > 500ns 5 @ 200V DO-201AD Active
1N5402RLG onsemi 200 3 1000 @ 3A Standard Recovery > 500ns 10 @ 200V DO-201AA / DO-27 Not For New Designs
EGP20A Fairchild Semiconductor 50 2 950 @ 2A Fast Recovery ≤ 500ns 50 5 @ 50V DO-15 Active
EGP20B Fairchild Semiconductor 100 2 950 @ 2A Fast Recovery ≤ 500ns 50 5 @ 100V DO-15 Active
EGP20C Fairchild Semiconductor 150 2 950 @ 2A Fast Recovery ≤ 500ns 50 5 @ 150V DO-15 Active
EGP20D onsemi 200 2 950 @ 2A Fast Recovery ≤ 500ns 50 5 @ 200V DO-15 Not For New Designs
EGP30A Fairchild Semiconductor 50 3 950 @ 3A Fast Recovery ≤ 500ns 50 5 @ 50V DO-201AD Active
EGP30B Fairchild Semiconductor 100 3 950 @ 3A Fast Recovery ≤ 500ns 50 5 @ 100V DO-201AD Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Substitution):

The STTH302 from STMicroelectronics is a parametric equivalent to STTH302RL, offering identical electrical specifications and package configuration. Both parts maintain Active product status and ROHS3 compliance. This part is suitable for direct substitution without circuit modification.

Similar Substitutes (Application-Dependent Selection):

1N5402-G (Comchip Technology) and 1N5402G (Taiwan Semiconductor Corporation) satisfy the 200 V / 3 A electrical requirements with DO-201AD axial packaging. Both maintain Active product status and ROHS3 compliance. These parts operate with Standard Recovery characteristics (>500ns) compared to the Fast Recovery specification of STTH302RL. Forward voltage is 1000 mV at 3 A versus 950 mV for the main part. Selection is appropriate for applications where recovery speed is not a critical performance parameter.

1N5402RLG (onsemi) meets voltage and current specifications but carries "Not For New Designs" product status. This part exhibits higher reverse leakage current (10 µA @ 200 V) and Standard Recovery characteristics. Use is restricted to legacy system maintenance or replacement applications only.

EGP20D (onsemi) provides 200 V rating with Fast Recovery characteristics matching STTH302RL speed performance. However, current rating is limited to 2 A, requiring circuit derating if 3 A operation is required. Product status is "Not For New Designs." Package is DO-15 (smaller form factor) rather than DO-201AD. This part is not suitable for direct substitution in 3 A applications.

EGP30A and EGP30B (Fairchild Semiconductor) provide 3 A current rating in DO-201AD package with Fast Recovery characteristics. Voltage ratings are 50 V and 100 V respectively, both below the 200 V requirement of STTH302RL. These parts are not suitable for 200 V applications.

EGP20A, EGP20B, EGP20C (Fairchild Semiconductor) provide voltage ratings from 50 V to 150 V with 2 A current rating in DO-15 package. These parts do not meet the 200 V / 3 A specification and are not suitable substitutes.

Recommended Selection Priority:

  1. STTH302 (STMicroelectronics) — Parametric equivalent, Active status
  2. 1N5402G (Taiwan Semiconductor Corporation) — Active status, 200 V / 3 A, DO-201AD package
  3. 1N5402-G (Comchip Technology) — Active status, 200 V / 3 A, DO-201AD package

Frequently Asked Questions (FAQ)

Q: Can STTH302 be used as a direct replacement for STTH302RL?

A: Yes. STTH302 is a parametric equivalent with identical voltage, current, and package specifications. Both parts are Active status with ROHS3 compliance and can be substituted without circuit modification.

Q: What is the difference between Fast Recovery and Standard Recovery diodes?

A: Fast Recovery diodes have reverse recovery time ≤ 500 ns, enabling faster switching and reduced switching losses in high-frequency applications. Standard Recovery diodes have reverse recovery time > 500 ns and are suitable for lower-frequency rectification. STTH302RL is Fast Recovery (35 ns trr), while 1N5402-G and 1N5402G are Standard Recovery. Selection depends on circuit switching frequency requirements.

Q: Can 1N5402-G or 1N5402G replace STTH302RL in all applications?

A: Both parts meet the 200 V / 3 A electrical specification and use DO-201AD axial packaging. However, they operate with Standard Recovery characteristics versus the Fast Recovery specification of STTH302RL. In applications where switching speed is not critical (low-frequency rectification), these parts are compatible. In high-frequency switching circuits, Fast Recovery characteristics may be required for proper operation.

Q: Why is 1N5402RLG marked "Not For New Designs"?

A: Parts with "Not For New Designs" status indicate manufacturer discontinuation or transition to newer alternatives. While 1N5402RLG meets electrical specifications, it should not be selected for new circuit designs. Use is limited to legacy system maintenance or replacement applications where the part is already in service.

Q: Can EGP20D replace STTH302RL?

A: EGP20D provides 200 V rating with Fast Recovery characteristics matching STTH302RL performance. However, current rating is 2 A versus 3 A for STTH302RL. EGP20D is not suitable for applications requiring 3 A operation. Additionally, EGP20D carries "Not For New Designs" status and uses DO-15 package rather than DO-201AD. This part is not recommended as a substitute.

Q: What does "Do-201AD" package mean?

A: DO-201AD is an axial through-hole package with leads extending from both ends of the component body. This package is suitable for insertion into through-hole PCB designs and is mechanically compatible with standard axial component mounting. DO-15 is a smaller axial package variant. Parts must use matching package types for mechanical compatibility.

Q: Are all substitute parts ROHS3 compliant?

A: All listed substitute parts carry ROHS3 Compliant status, meeting European Union Restriction of Hazardous Substances requirements. Compliance is maintained across all recommended substitutes.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current (Ir) represents the small current flowing through the diode in reverse bias condition. STTH302RL specifies 3 µA @ 200 V, while 1N5402-G and 1N5402G specify 5 µA, and 1N5402RLG specifies 10 µA. Higher leakage current increases power dissipation and heat generation in reverse bias operation. For most general-purpose rectification applications, these differences are negligible. High-precision analog circuits or low-power applications may require lower leakage specifications.

Q: Can parts with different forward voltage drops be substituted?

A: STTH302RL specifies 950 mV forward voltage at 3 A, while 1N5402-G and 1N5402G specify 1000 mV. The 50 mV difference represents approximately 5% variation. In power supply rectification, this difference results in slightly higher power dissipation and heat generation. For most applications, this variation is acceptable. Precision analog circuits or high-efficiency designs may require matching forward voltage specifications.

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