STTH1R02RL Equivalent & Substitute Parts

Part Overview

The STTH1R02RL is a general-purpose rectifier diode manufactured by STMicroelectronics, rated for 200 V DC reverse voltage and 1.5 A average rectified current in a through-hole DO-41 package. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and production continuity. Active alternatives with identical or compatible electrical characteristics are available from STMicroelectronics and other manufacturers.

Substiute Parts

STTH1R02RL
STMicroelectronicsIn Stock: 10168STTH1R02RL Datasheet
STTH1R02RL
Current Part
STTH1R02
STMicroelectronicsIn Stock: 1241STTH1R02 Datasheet
STTH1R02
Parametric Equivalent
EGP10D
Fairchild SemiconductorIn Stock: 1448EGP10D Datasheet
EGP10D
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1.5 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1.5 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V
Mounting Type Through Hole -
Package / Case DO-204AL, DO-41, Axial -
Operating Temperature - Junction (Max) 175 °C
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the STTH1R02RL is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V minimum
  • Current - Average Rectified (Io): 1.5 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-41 or DO-204AL compatible
  • Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Parametric Equivalent Classification: The STTH1R02 from STMicroelectronics is a parametric equivalent, sharing identical voltage, current, speed, and package specifications with the obsolete STTH1R02RL. This part maintains full compatibility with the original design.

Similar Manufacturer Classification: The EGP10D from Fairchild Semiconductor is classified as a similar manufacturer substitute. While it meets the 200 V reverse voltage and through-hole DO-41 package requirements, it operates at a reduced average rectified current of 1 A (versus 1.5 A) and exhibits different forward voltage and reverse recovery time characteristics. This part is suitable for applications where the 1.5 A current rating is not required.

Parameter Comparison

Parameter STTH1R02RL (Main) STTH1R02 (Parametric Equivalent) EGP10D (Similar Manufacturer)
Manufacturer STMicroelectronics STMicroelectronics Fairchild Semiconductor
Product Status Obsolete Active Active
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) 1.5 A 1.5 A 1 A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1.5 A 1 V @ 1.5 A 950 mV @ 1 A
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 50 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 3 µA @ 200 V 5 µA @ 200 V
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Operating Temperature - Junction (Max) 175°C 175°C 150°C
RoHS Status ROHS3 Compliant ROHS3 Compliant Not specified

Engineering Selection Recommendations

For Direct Replacement (Parametric Equivalent): The STTH1R02 is the primary substitute for the obsolete STTH1R02RL. This part is manufactured by the same supplier (STMicroelectronics), maintains active product status, and provides identical electrical specifications and package configuration. The STTH1R02 carries ROHS3 compliance and is suitable for direct substitution in all applications originally designed for the STTH1R02RL.

For Current-Reduced Applications (Similar Manufacturer): The EGP10D from Fairchild Semiconductor is applicable in designs where the average rectified current requirement does not exceed 1 A. This part meets the 200 V reverse voltage and through-hole DO-41 package requirements. The EGP10D exhibits a longer reverse recovery time (50 ns versus 30 ns) and higher reverse leakage current (5 µA versus 3 µA), with a maximum junction temperature of 150°C. Selection of the EGP10D requires confirmation that the application current demand does not exceed 1 A and that the thermal operating range is compatible with the 150°C maximum junction temperature.

Frequently Asked Questions (FAQ)

Q: Can the STTH1R02 be used as a direct replacement for the STTH1R02RL?

A: Yes. The STTH1R02 is a parametric equivalent with identical voltage rating (200 V), current rating (1.5 A), forward voltage (1 V @ 1.5 A), reverse recovery time (30 ns), and package configuration (DO-41). The STTH1R02 is manufactured by STMicroelectronics and maintains active product status, making it suitable for direct substitution.

Q: What are the limitations of using the EGP10D as a substitute?

A: The EGP10D is rated for 1 A average rectified current, compared to the 1.5 A rating of the STTH1R02RL. Applications requiring the full 1.5 A current capacity cannot use the EGP10D. Additionally, the EGP10D exhibits a reverse recovery time of 50 ns (versus 30 ns) and a maximum junction temperature of 150°C (versus 175°C), which may affect performance in high-frequency switching or high-temperature environments.

Q: Are all substitute parts compatible with the DO-41 package footprint?

A: Yes. Both the STTH1R02 and EGP10D are specified for DO-204AL, DO-41, and Axial package configurations, ensuring mechanical and electrical compatibility with through-hole PCB designs originally specified for the STTH1R02RL.

Q: Does the EGP10D meet RoHS compliance requirements?

A: RoHS status is not specified in the available technical data for the EGP10D. The STTH1R02 is confirmed as ROHS3 compliant. Verification of RoHS compliance for the EGP10D should be obtained from the manufacturer or supplier if regulatory compliance is a design requirement.

Q: What is the difference in reverse leakage current between the main part and substitutes?

A: The STTH1R02RL and STTH1R02 both specify 3 µA reverse leakage current at 200 V. The EGP10D specifies 5 µA reverse leakage current at 200 V. This difference may be significant in precision analog circuits or high-impedance applications where leakage current affects circuit performance.

Request Quote (Ships tomorrow)