STTA812DIRG Equivalent & Substitute Parts

Part Overview

The STTA812DIRG is a general-purpose rectifier diode manufactured by STMicroelectronics, rated for 1200 V DC reverse voltage and 8 A average rectified current. This device features fast recovery characteristics with a reverse recovery time of 100 ns and is housed in a TO-220AC insulated through-hole package. The STTA812DIRG is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical performance specifications and mechanical compatibility while offering current availability and active product status.

Substiute Parts

STTA812DIRG

STMicroelectronicsIn Stock: 1140STTA812DIRG Datasheet

Current PartRFQ

STTH812DI

STMicroelectronicsIn Stock: 7154STTH812DI Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STTA812DIRG is determined by equivalence in the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 8 A
• Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
• Reverse Recovery Time (trr): 100 ns
• Speed Classification: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-220-2 Insulated, TO-220AC

Compliance Criteria:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The STTH812DI meets all electrical and mechanical equivalence requirements and is classified as an active product, making it a direct substitute for the obsolete STTA812DIRG.

Parameter Comparison

Engineering Selection Recommendations

The STTH812DI is a direct electrical and mechanical equivalent to the STTA812DIRG and is the appropriate substitute for applications requiring this rectifier diode specification. The STTH812DI offers the following advantages:

Product Status: The STTH812DI maintains active product status with STMicroelectronics, ensuring continued availability and supply chain reliability. The STTA812DIRG is obsolete and no longer recommended for new designs.

Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for electronic component procurement.

Electrical Performance: The STTH812DI delivers identical electrical specifications across all critical parameters: 1200 V reverse voltage rating, 8 A average rectified current, 2.2 V forward voltage drop at 8 A, and 100 ns reverse recovery time. The substitute exhibits lower reverse leakage current (8 µA versus 100 µA at 1200 V), representing improved performance characteristics.

Thermal Performance: The STTH812DI supports a maximum junction operating temperature of 175°C, compared to 150°C for the STTA812DIRG, providing enhanced thermal margin in high-temperature applications.

Mechanical Compatibility: Both devices utilize identical TO-220AC insulated through-hole packaging, ensuring direct mechanical compatibility in existing circuit board layouts and thermal management designs.

Frequently Asked Questions (FAQ)

Q: Can the STTH812DI be used as a direct replacement for the STTA812DIRG in existing designs?

A: Yes. The STTH812DI is electrically and mechanically equivalent to the STTA812DIRG. Both devices share identical voltage ratings (1200 V), current ratings (8 A), forward voltage characteristics (2.2 V @ 8 A), reverse recovery time (100 ns), and TO-220AC package configuration. Direct substitution is supported without circuit modification.

Q: What are the key differences between the STTA812DIRG and STTH812DI?

A: The primary differences are product status and performance enhancements. The STTA812DIRG is obsolete, while the STTH812DI is active. The STTH812DI exhibits lower reverse leakage current (8 µA versus 100 µA at 1200 V) and higher maximum junction temperature (175°C versus 150°C). These differences represent improved performance characteristics with no negative impact on compatibility.

Q: Are there packaging differences between these devices?

A: No. Both the STTA812DIRG and STTH812DI are supplied in TO-220-2 insulated, TO-220AC through-hole packages. Mechanical dimensions, pin configuration, and mounting requirements are identical.

Q: What is the reverse recovery time specification, and why is it important?

A: Both devices specify a reverse recovery time (trr) of 100 ns, classifying them as fast recovery diodes. This parameter defines the time required for the diode to transition from forward conduction to reverse blocking when the applied voltage reverses. Fast recovery characteristics minimize switching losses in high-frequency rectification circuits.

Q: Do both devices meet current regulatory compliance requirements?

A: Yes. Both the STTA812DIRG and STTH812DI are ROHS3 compliant and REACH unaffected, satisfying current regulatory requirements for electronic component procurement in regulated markets.

Q: What is the significance of the reverse leakage current difference?

A: The STTH812DI exhibits reverse leakage current of 8 µA at 1200 V, compared to 100 µA for the STTA812DIRG. Lower reverse leakage current reduces standby power dissipation and improves circuit efficiency in applications where the diode operates in reverse bias conditions for extended periods.

Q: Can the STTH812DI be used in applications requiring the full 150°C junction temperature rating of the STTA812DIRG?

A: Yes. The STTH812DI supports a maximum junction temperature of 175°C, which exceeds the 150°C requirement of the STTA812DIRG. Applications designed for the STTA812DIRG thermal specifications operate within the STTH812DI thermal envelope.