STT7P2UH7 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STT7P2UH7 is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 20V drain-to-source voltage with 7A continuous drain current in a SOT-23-6 surface mount package. This device is part of the STripFET™ series and is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute components is necessary to maintain design continuity and ensure supply chain availability for new production runs and legacy system support.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	7	A
On-Resistance (Rds On Max) @ Id, Vgs	22.5 mOhm @ 3.5A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	1	V @ 250µA
Gate Charge (Qg Max) @ Vgs	22	nC @ 4.5V
Maximum Gate Voltage (Vgs Max)	±8	V
Input Capacitance (Ciss Max) @ Vds	2390	pF @ 16V
Power Dissipation (Max)	1.6	W
Operating Temperature (TJ)	150	°C
Package Type	SOT-23-6	Surface Mount
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the STT7P2UH7 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 20V minimum
Continuous Drain Current (Id): 7A or greater at 25°C
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package Compatibility: SOT-23-6 or equivalent 6-pin surface mount package

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Within specified range
On-Resistance (Rds On): Must not exceed application requirements
Gate Charge (Qg): Lower values preferred for switching speed
Input Capacitance (Ciss): Lower values preferred for gate drive efficiency
Operating Temperature Range: Must support application thermal requirements
Compliance: RoHS3 and MSL ratings

The SQ3425EV-T1_GE3 from Vishay Siliconix meets the core electrical requirements for substitution, with matching Vdss (20V) and exceeding the continuous drain current specification (7.4A vs. 7A). Both devices are RoHS3 compliant with MSL 1 rating.

Parameter Comparison

Parameter	STT7P2UH7 (Main)	SQ3425EV-T1_GE3 (Substitute)	Unit
Manufacturer	STMicroelectronics	Vishay Siliconix
Product Status	Obsolete	Active
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20	20	V
Continuous Drain Current (Id) @ 25°C	7	7.4	A
On-Resistance (Rds On Max)	22.5 mOhm @ 3.5A, 4.5V	60 mOhm @ 4.7A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	1	1.4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	22	10.3	nC @ 4.5V
Maximum Gate Voltage (Vgs Max)	±8	±12	V
Input Capacitance (Ciss Max) @ Vds	2390 pF @ 16V	840 pF @ 10V	pF
Power Dissipation (Max)	1.6	5	W
Operating Temperature Range (TJ)	150	-55 to 175	°C
Package Type	SOT-23-6	6-TSOP / TSOT-23-6
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
Automotive Qualification	Not specified	AEC-Q101

Engineering Selection Recommendations

STT7P2UH7 (Obsolete Status): The STT7P2UH7 is classified as obsolete and no longer in active production. While 20,524 pieces remain in inventory, this component is not recommended for new designs. Existing designs using this part should transition to active alternatives to ensure long-term supply chain stability.

SQ3425EV-T1_GE3 (Active Substitute): The SQ3425EV-T1_GE3 is an active product from Vishay Siliconix and qualifies as a direct electrical substitute. This device meets or exceeds all critical electrical parameters:

Matches Vdss specification at 20V
Exceeds continuous drain current requirement (7.4A vs. 7A)
Provides wider operating temperature range (-55°C to 175°C vs. 150°C maximum)
Holds AEC-Q101 automotive qualification, providing additional reliability assurance
Maintains RoHS3 compliance and MSL 1 rating

Package Consideration: The SQ3425EV-T1_GE3 is supplied in 6-TSOP (TSOT-23-6) packaging, which is mechanically and electrically compatible with the SOT-23-6 footprint of the STT7P2UH7. Pin configuration alignment must be verified during design transition.

On-Resistance Trade-off: The SQ3425EV-T1_GE3 exhibits higher on-resistance (60 mOhm vs. 22.5 mOhm at rated conditions). Applications sensitive to conduction losses must evaluate thermal performance under actual operating conditions. The higher power dissipation rating (5W vs. 1.6W) of the substitute provides additional thermal margin.

Gate Charge Advantage: The SQ3425EV-T1_GE3 features significantly lower gate charge (10.3 nC vs. 22 nC), resulting in faster switching transitions and reduced gate drive power requirements.

Frequently Asked Questions (FAQ)

Q: Can the SQ3425EV-T1_GE3 directly replace the STT7P2UH7 in existing designs?

A: The SQ3425EV-T1_GE3 is electrically compatible as a substitute, meeting all critical voltage and current specifications. However, the higher on-resistance and different gate charge characteristics require thermal and switching performance validation. Pin-to-pin compatibility must be confirmed for the specific PCB layout.

Q: What is the primary reason for substitution?

A: The STT7P2UH7 is obsolete and no longer manufactured. The SQ3425EV-T1_GE3 is an active product with equivalent electrical performance and superior long-term availability.

Q: Are there package compatibility concerns?

A: Both devices use 6-pin surface mount packages (SOT-23-6 and 6-TSOP/TSOT-23-6). These packages are mechanically compatible, but pin assignment must be verified to ensure correct circuit operation.

Q: How does the on-resistance difference affect circuit performance?

A: The SQ3425EV-T1_GE3 has higher on-resistance (60 mOhm vs. 22.5 mOhm). In applications with high continuous current, this results in increased conduction losses and heat generation. The substitute's higher power dissipation rating (5W vs. 1.6W) accommodates this characteristic. Thermal analysis is required for current-limited or high-frequency switching applications.

Q: What compliance advantages does the SQ3425EV-T1_GE3 offer?

A: The SQ3425EV-T1_GE3 holds AEC-Q101 automotive qualification, indicating compliance with automotive reliability and quality standards. Both devices are RoHS3 compliant with MSL 1 rating, suitable for unlimited moisture exposure during storage and handling.

Q: Is the wider operating temperature range of the substitute beneficial?

A: The SQ3425EV-T1_GE3 operates from -55°C to 175°C, compared to the STT7P2UH7's 150°C maximum. This extended range provides additional thermal margin and supports applications requiring operation at elevated temperatures.

Q: What is the gate charge significance in switching applications?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The SQ3425EV-T1_GE3's lower gate charge (10.3 nC vs. 22 nC) reduces gate drive power consumption and enables faster switching transitions, beneficial for high-frequency applications.

Q: Are there any electrical parameters where the STT7P2UH7 performs better?

A: The STT7P2UH7 exhibits lower on-resistance (22.5 mOhm vs. 60 mOhm) and lower input capacitance (2390 pF vs. 840 pF at different measurement points). Applications prioritizing minimal conduction losses should evaluate whether the substitute's higher on-resistance is acceptable within thermal constraints.

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