STSJ100NH3LL N-Channel MOSFET 30V 100A Equivalent & Substitute Parts

Part Overview

The STSJ100NH3LL is an N-Channel MOSFET manufactured by STMicroelectronics, part of the STripFET™ III series. This device is rated for 30V drain-to-source voltage with a continuous drain current of 100A at 25°C and maximum power dissipation of 70W (Tc). The component is housed in an 8-SOIC package with exposed pad for surface mount applications.

The STSJ100NH3LL is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET specification.

Substiute Parts

STSJ100NH3LL

STMicroelectronicsIn Stock: 1496STSJ100NH3LL Datasheet

Current PartRFQ

SI4842BDY-T1-GE3

Vishay SiliconixIn Stock: 7837SI4842BDY-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STSJ100NH3LL is determined by alignment of the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• FET Type: N-Channel MOSFET technology
• Package Type: 8-SOIC surface mount configuration
• Gate voltage compatibility: Vgs(Max) must accommodate circuit drive requirements
• On-resistance characteristics: Rds On must support application current and thermal requirements

Mechanical Compatibility Criteria:

• Package footprint: 8-SOIC (0.154", 3.90mm Width)
• Mounting type: Surface Mount
• Exposed pad configuration for thermal management

Regulatory Compliance:

• RoHS3 compliance required
• MSL rating of 1 (Unlimited) for handling and storage

The SI4842BDY-T1-GE3 substitute part meets the voltage rating, package type, and regulatory requirements. However, the continuous drain current rating of 28A (Tc) is significantly lower than the 100A specification of the STSJ100NH3LL. This substitute is suitable only for applications where the actual operating current does not exceed the SI4842BDY-T1-GE3 current rating.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The STSJ100NH3LL is classified as obsolete. The SI4842BDY-T1-GE3 is an active product from a major manufacturer, ensuring ongoing availability and supply chain stability.

Compliance and Certification: Both parts are ROHS3 compliant and carry MSL rating 1 (Unlimited), meeting regulatory requirements for manufacturing and storage. Both are assigned ECCN EAR99 and HTSUS 8541.29.0095 classifications.

Current Rating Limitation: The primary constraint in substitution is the continuous drain current specification. The SI4842BDY-T1-GE3 is rated for 28A (Tc) compared to the STSJ100NH3LL at 100A (Tc). Selection of this substitute is limited to applications where the actual operating drain current does not exceed 28A at 25°C.

Voltage and Package Compatibility: Both devices share identical 30V Vdss ratings and 8-SOIC surface mount package footprints, ensuring mechanical and electrical compatibility at the voltage level.

Thermal Management: The SI4842BDY-T1-GE3 has significantly lower maximum power dissipation (6.25W Tc versus 70W Tc). Thermal design must account for this reduced power handling capability.

Frequently Asked Questions (FAQ)

Q: Can the SI4842BDY-T1-GE3 directly replace the STSJ100NH3LL in all applications?

A: No. The SI4842BDY-T1-GE3 has a maximum continuous drain current of 28A (Tc), while the STSJ100NH3LL is rated for 100A (Tc). Direct substitution is limited to applications where the actual operating current does not exceed 28A. Applications requiring the full 100A capability require alternative parts.

Q: Are the package footprints identical?

A: Both devices use 8-SOIC (0.154", 3.90mm Width) surface mount packages. The STSJ100NH3LL includes an exposed pad, while the SI4842BDY-T1-GE3 standard package does not specify an exposed pad. PCB layout compatibility depends on whether the exposed pad is utilized in the original design.

Q: What is the difference in gate charge between these parts?

A: The STSJ100NH3LL has a gate charge of 40 nC @ 4.5V, while the SI4842BDY-T1-GE3 has 100 nC @ 10V. Higher gate charge requires greater driver current and longer switching times. Circuit design must accommodate this difference in gate drive requirements.

Q: Are both parts RoHS compliant?

A: Yes. Both the STSJ100NH3LL and SI4842BDY-T1-GE3 are ROHS3 compliant and carry MSL rating 1 (Unlimited), meeting regulatory requirements for manufacturing and storage.

Q: What is the operating temperature range for each part?

A: The STSJ100NH3LL is rated to 150°C (TJ). The SI4842BDY-T1-GE3 has an extended operating range of -55°C to 150°C (TJ), providing broader temperature capability.

Q: How do the on-resistance specifications compare?

A: The STSJ100NH3LL specifies 3.5 mOhm @ 12.5A, 10V. The SI4842BDY-T1-GE3 specifies 4.2 mOhm @ 20A, 10V. The STSJ100NH3LL exhibits lower on-resistance at its rated test current, resulting in lower conduction losses at equivalent gate drive voltages.

Q: What is the maximum gate voltage for each device?

A: The STSJ100NH3LL is rated for ±16V maximum gate voltage. The SI4842BDY-T1-GE3 is rated for ±20V maximum gate voltage, providing greater gate drive margin in circuit designs.