STS9NF3LL N-Channel 30V 9A MOSFET Equivalent & Substitute Parts

Part Overview

The STS9NF3LL is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 9A continuous drain current in an 8-SOIC surface mount package. This device is part of the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and package form factor.

Key Parameters

Parameter	STS9NF3LL Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	9	A
Rds On (Max) @ Id, Vgs	19 mOhm @ 4.5A, 10V	—
Vgs(th) (Max) @ Id	1 V @ 250µA	—
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 5V	—
Vgs (Max)	±16	V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25V	—
Power Dissipation (Max)	2.5	W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the STS9NF3LL is determined by strict adherence to the following critical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V minimum
Package / Case: 8-SOIC form factor (0.154", 3.90mm Width)
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Functional Compatibility Parameters:

Current - Continuous Drain (Id) @ 25°C: Minimum 9A
Rds On (Max): Must not exceed specifications at rated conditions
Vgs(th) (Max): Gate threshold voltage compatibility
Power Dissipation (Max): Minimum 2.5W
Operating Temperature: Minimum 150°C (TJ)

The substitute parts listed below satisfy all mandatory matching parameters and maintain functional compatibility within the electrical operating envelope of the STS9NF3LL. Variations in secondary parameters such as gate charge, input capacitance, and specific on-resistance values are acceptable provided they do not degrade circuit performance or thermal management.

Parameter Comparison

Parameter	STS9NF3LL	DMG4496SSS-13	FDS8884	IRF7403TRPBF	IRF7807ZTRPBF	ZXMN3B04N8TA
Manufacturer	STMicroelectronics	Diodes Incorporated	onsemi	Infineon Technologies	Infineon Technologies	Diodes Incorporated
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	9	10	8.5	8.5	11	7.2
Rds On (Max) @ Vgs (mOhm)	19 @ 10V	21.5 @ 10V	23 @ 10V	22 @ 10V	13.8 @ 10V	25 @ 4.5V
Vgs(th) (Max) @ 250µA (V)	1	2	2.5	1	2.25	0.7
Gate Charge (Qg) (Max) (nC)	17 @ 5V	10.2 @ 10V	13 @ 10V	57 @ 10V	11 @ 4.5V	23.1 @ 4.5V
Vgs (Max) (V)	±16	±25	±20	±20	±20	±12
Ciss (Max) (pF)	800 @ 25V	493.5 @ 15V	635 @ 15V	1200 @ 25V	770 @ 15V	2480 @ 15V
Power Dissipation (Max) (W)	2.5	1.42	2.5	2.5	2.5	2
Operating Temperature (TJ) (°C)	150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Not For New Designs	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The DMG4496SSS-13 (Diodes Incorporated) and FDS8884 (onsemi) are the preferred substitutes for the STS9NF3LL. Both devices are classified as Active products, ensuring long-term availability and ongoing manufacturer support. The DMG4496SSS-13 provides 10A continuous drain current, exceeding the STS9NF3LL specification, with comparable on-resistance characteristics. The FDS8884 maintains the exact 2.5W power dissipation rating and 8.5A current capacity, providing a conservative electrical match. Both parts are ROHS3 compliant with MSL 1 rating, matching the original device compliance profile.

Secondary Substitutes (Not For New Designs Status):

The IRF7403TRPBF and IRF7807ZTRPBF (Infineon Technologies) are classified as Not For New Designs. These devices are electrically compatible but should not be selected for new circuit designs due to their product lifecycle status. The IRF7807ZTRPBF offers superior on-resistance performance (13.8 mOhm) and higher current capacity (11A), making it suitable for legacy system maintenance or replacement applications where the original STS9NF3LL is no longer available.

Tertiary Substitute (Active Product Status):

The ZXMN3B04N8TA (Diodes Incorporated) is an active product with 7.2A continuous drain current, representing a lower-current alternative. This device is suitable for applications where the full 9A capacity of the STS9NF3LL is not required. The ZXMN3B04N8TA exhibits higher on-resistance (25 mOhm @ 4.5V) and significantly higher input capacitance (2480 pF), which may impact switching performance in high-frequency applications.

Compliance and Certification:

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols. All devices are rated for 150°C maximum junction temperature, matching the thermal operating envelope of the original STS9NF3LL.

Frequently Asked Questions (FAQ)

Q: Can the DMG4496SSS-13 directly replace the STS9NF3LL in existing designs?

A: Yes. The DMG4496SSS-13 maintains the same 30V Vdss rating, 8-SOIC package form factor, and surface mount configuration. The 10A continuous drain current exceeds the STS9NF3LL specification of 9A, providing design margin. On-resistance characteristics are comparable at 21.5 mOhm versus 19 mOhm, representing a 13% increase. Verify that circuit design tolerates this on-resistance variation and the resulting thermal dissipation increase.

Q: What is the difference between the FDS8884 and DMG4496SSS-13 substitutes?

A: The FDS8884 provides 8.5A continuous drain current with 23 mOhm on-resistance, while the DMG4496SSS-13 provides 10A with 21.5 mOhm on-resistance. The FDS8884 is manufactured by onsemi (PowerTrench® series), and the DMG4496SSS-13 is manufactured by Diodes Incorporated. Both are active products with identical package specifications and compliance ratings. The FDS8884 matches the exact 2.5W power dissipation of the original device, while the DMG4496SSS-13 is rated at 1.42W (Ta). Select based on current requirements and thermal design constraints.

Q: Why are IRF7403TRPBF and IRF7807ZTRPBF marked as "Not For New Designs"?

A: These Infineon devices are in the Not For New Designs lifecycle phase, indicating that the manufacturer is transitioning these products out of active production. While electrically compatible and currently in stock, they should not be selected for new circuit designs. These devices are suitable for replacement or maintenance of existing systems where the STS9NF3LL is no longer available.

Q: Is the ZXMN3B04N8TA suitable for high-frequency switching applications?

A: The ZXMN3B04N8TA exhibits significantly higher input capacitance (2480 pF @ 15V) compared to the STS9NF3LL (800 pF @ 25V). This increased capacitance will increase gate charge requirements and switching losses in high-frequency applications. The device is suitable for lower-frequency or lower-current applications where the 7.2A rating is sufficient. Verify switching frequency and gate drive capability before selection.

Q: Are all substitute parts available in the same packaging options as the STS9NF3LL?

A: All substitute parts are available in 8-SOIC surface mount packages matching the STS9NF3LL form factor. Packaging options vary by manufacturer: the STS9NF3LL is available in Cut Tape (CT) & Digi-Reel®, while DMG4496SSS-13 and FDS8884 are available in Tape & Reel (TR), and ZXMN3B04N8TA is available in Cut Tape (CT). Verify packaging availability with your supplier for production requirements.

Q: What is the maximum gate voltage rating for each substitute?

A: The STS9NF3LL is rated for ±16V maximum gate voltage. Substitute parts vary: DMG4496SSS-13 (±25V), FDS8884 (±20V), IRF7403TRPBF (±20V), IRF7807ZTRPBF (±20V), and ZXMN3B04N8TA (±12V). The ZXMN3B04N8TA has the lowest gate voltage rating at ±12V. Ensure gate drive circuits do not exceed the maximum Vgs rating of the selected substitute device.

Q: How do the on-resistance specifications compare across all substitutes?

A: On-resistance values are specified at different current and voltage conditions. At 10V gate voltage: STS9NF3LL (19 mOhm @ 4.5A), DMG4496SSS-13 (21.5 mOhm @ 10A), FDS8884 (23 mOhm @ 8.5A), IRF7403TRPBF (22 mOhm @ 4A), and IRF7807ZTRPBF (13.8 mOhm @ 11A). The IRF7807ZTRPBF offers the lowest on-resistance, while the ZXMN3B04N8TA (25 mOhm @ 4.5V) is specified at lower gate voltage. Compare on-resistance at your specific operating current and gate voltage for accurate thermal analysis.

Q: Can I use the IRF7807ZTRPBF for new designs despite its "Not For New Designs" status?

A: The IRF7807ZTRPBF is electrically compatible and currently in stock with 19,457 pieces available. However, manufacturer lifecycle status indicates this device is being phased out. For new designs, select from active products: DMG4496SSS-13, FDS8884, or ZXMN3B04N8TA. The IRF7807ZTRPBF is appropriate for legacy system maintenance or replacement applications where long-term availability is not a requirement.

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