STS9NF30L N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STS9NF30L is an N-Channel MOSFET manufactured by STMicroelectronics, part of the STripFET™ II series. This device is rated for 30V drain-to-source voltage with 9A continuous drain current and 2.5W power dissipation in a surface mount 8-SOIC package. The part is currently classified as obsolete, making equivalent substitutes necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value
Drain to Source Voltage (Vdss)	30 V
Continuous Drain Current (Id) @ 25°C	9 A
Power Dissipation (Max)	2.5 W
Rds On (Max) @ 10V Vgs	20 mOhm @ 4.5A
Gate Charge (Qg) (Max)	12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max)	730 pF @ 25 V
Vgs (Max)	±18 V
Operating Temperature (TJ)	150°C
Package Type	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the STS9NF30L is determined by strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The following criteria establish substitution validity:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 30 V (exact match required)
Package Type: 8-SOIC surface mount (mechanical compatibility)
Continuous Drain Current (Id): Minimum 8.4 A (operational equivalence)
Power Dissipation: 2.5 W (thermal performance)
Gate Charge (Qg): Within acceptable switching performance range
Input Capacitance (Ciss): Compatible with drive circuit requirements

Both substitute parts (FDS8884 and FDS6612A) meet these criteria with drain currents of 8.5A and 8.4A respectively, matching the 30V voltage rating and 8-SOIC package configuration. All parts maintain ROHS3 compliance and surface mount compatibility.

Parameter Comparison

Parameter	STS9NF30L (Main)	FDS8884 (onsemi)	FDS6612A (Fairchild)
Manufacturer	STMicroelectronics	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Active	Active
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Continuous Drain Current (Id) @ 25°C	9 A (Tc)	8.5 A (Ta)	8.4 A (Ta)
Rds On (Max) @ 10V Vgs	20 mOhm @ 4.5A	23 mOhm @ 8.5A	22 mOhm @ 8.4A
Gate Charge (Qg) (Max)	12.5 nC @ 4.5 V	13 nC @ 10 V	7.6 nC @ 5 V
Input Capacitance (Ciss) (Max)	730 pF @ 25 V	635 pF @ 15 V	560 pF @ 15 V
Vgs (Max)	±18 V	±20 V	±20 V
Operating Temperature (TJ)	150°C	-55°C ~ 150°C	-55°C ~ 150°C
Package Type	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified in data
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Not specified in data

Engineering Selection Recommendations

FDS8884 (onsemi) is the primary substitute for the STS9NF30L. This part is currently in active production status, ensuring long-term availability and supply chain stability. The FDS8884 maintains identical voltage and package specifications with 8.5A continuous drain current, representing a 5.6% reduction from the original 9A rating. The device carries ROHS3 compliance and MSL 1 rating, matching the original part's environmental certifications. The slightly elevated Rds On value (23 mOhm versus 20 mOhm) results in marginally higher conduction losses but remains within acceptable thermal limits for the 2.5W power dissipation specification.

FDS6612A (Fairchild Semiconductor) serves as a secondary substitute option. This part is also in active production with 8.4A continuous drain current and maintains the 30V voltage rating and 8-SOIC package configuration. The FDS6612A exhibits lower gate charge (7.6 nC) and input capacitance (560 pF) compared to both the main part and the primary substitute, resulting in faster switching characteristics. The Rds On specification (22 mOhm) falls between the main part and the primary substitute. Extended operating temperature range (-55°C to 150°C) provides additional thermal margin compared to the main part's 150°C maximum junction temperature specification.

Both substitutes support direct PCB layout compatibility without modification and are suitable for applications requiring the 30V/9A MOSFET performance envelope.

Frequently Asked Questions (FAQ)

Q: Can the FDS8884 directly replace the STS9NF30L without PCB modifications?

A: Yes. Both devices use identical 8-SOIC (0.154", 3.90mm Width) surface mount packaging. Pin configuration and footprint are mechanically compatible, requiring no PCB layout changes.

Q: What is the significance of the 9A versus 8.5A drain current difference?

A: The STS9NF30L is rated for 9A continuous drain current, while the FDS8884 is rated for 8.5A. This 5.6% reduction means the FDS8884 operates at slightly lower maximum current capacity. For applications operating below 8.5A, this difference is not operationally significant. Applications requiring the full 9A specification should evaluate thermal performance under actual load conditions.

Q: How do the Rds On values affect circuit performance?

A: The STS9NF30L specifies 20 mOhm Rds On at 10V Vgs and 4.5A drain current. The FDS8884 specifies 23 mOhm at 10V Vgs and 8.5A drain current. Higher Rds On increases conduction losses (I²R heating). At 8.5A, the FDS8884 dissipates approximately 1.66W in Rds On losses, compared to approximately 0.72W for the STS9NF30L at 4.5A. Both remain within the 2.5W total power dissipation specification when accounting for switching losses and other thermal contributions.

Q: What is the difference between gate charge specifications at different Vgs values?

A: Gate charge is measured at different gate-source voltages depending on the manufacturer's test conditions. The STS9NF30L specifies 12.5 nC at 4.5V, the FDS8884 specifies 13 nC at 10V, and the FDS6612A specifies 7.6 nC at 5V. These variations reflect different measurement conditions rather than direct performance differences. Lower gate charge generally indicates faster switching response, but direct comparison requires evaluation at identical Vgs conditions.

Q: Are there compliance or certification differences between the substitutes?

A: The STS9NF30L and FDS8884 both carry ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings. The FDS6612A data provided does not specify RoHS or MSL status. For applications requiring documented ROHS3 compliance, the FDS8884 is the recommended choice.

Q: Why is the STS9NF30L classified as obsolete?

A: Obsolescence indicates the manufacturer (STMicroelectronics) has discontinued production and will not accept new orders. The FDS8884 and FDS6612A are both in active production status, ensuring continued availability and supply chain support.

Q: Can the FDS6612A be used instead of the FDS8884?

A: Yes, the FDS6612A meets the same electrical and mechanical substitution criteria. The FDS6612A offers lower gate charge and input capacitance, resulting in faster switching characteristics. Selection between FDS8884 and FDS6612A depends on specific application requirements for switching speed, gate drive capability, and compliance documentation needs.

Q: What is the operating temperature range difference?

A: The STS9NF30L specifies a maximum junction temperature (TJ) of 150°C without a minimum specification. The FDS8884 and FDS6612A both specify -55°C to 150°C operating range. For applications operating at temperatures below 0°C, the substitute parts provide documented performance specifications, while the original part does not.

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