STS8DNH3LL MOSFET Equivalent & Substitute Parts

Part Overview

The STS8DNH3LL is a dual N-channel MOSFET array manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 8A continuous drain current. This device is part of the STripFET™ III series and is packaged in an 8-SOIC surface mount configuration. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and availability constraints.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8	A
On-Resistance (Rds On) @ Id, Vgs	22 mOhm @ 4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	1	V @ 250µA
Gate Charge (Qg) @ Vgs	10	nC @ 4.5V
Input Capacitance (Ciss) @ Vds	857	pF @ 25V
Maximum Power Dissipation	2	W
Junction Temperature (TJ)	150	°C
Configuration	2 N-Channel (Dual)	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the STS8DNH3LL is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id) @ 25°C: Must equal or exceed 8A
Package / Case: Must be 8-SOIC (0.154", 3.90mm Width) or equivalent footprint
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Maximum Power Dissipation: Must support 2W or greater
Junction Temperature Rating: Must support 150°C or greater

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance; values at or below 22 mOhm @ specified conditions are acceptable
Gate Threshold Voltage (Vgs(th)): Logic level operation (typically 1V to 2.6V @ 250µA) ensures gate drive compatibility
Gate Charge (Qg): Lower values reduce switching losses; values between 10nC and 22nC are functionally compatible
Input Capacitance (Ciss): Values between 448pF and 1400pF maintain circuit performance

Substitute parts are grouped into three categories based on product status and electrical performance alignment:

Category A (Active, Full Compatibility): Parts with active product status, matching or exceeding all primary criteria, and electrical parameters within acceptable ranges for direct substitution.

Category B (Active, Parameter Variance): Parts with active product status that meet primary criteria but exhibit variations in secondary parameters such as gate charge or input capacitance.

Category C (Not For New Designs, Legacy Compatibility): Parts with obsolete or not-for-new-designs status that maintain electrical compatibility but are not recommended for new circuit implementations.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Max (W)	TJ Max (°C)	Package	Status
STS8DNH3LL	STMicroelectronics	30	8	22 @ 4A, 10V	1 @ 250µA	10 @ 4.5V	857 @ 25V	2	150	8-SOIC	Obsolete
STS8DNF3LL	STMicroelectronics	30	8	20 @ 4A, 10V	1 @ 250µA	17 @ 5V	800 @ 25V	1.6	150	8-SOIC	Not For New Designs
AO4818B	Alpha & Omega Semiconductor Inc.	30	8	19 @ 8A, 10V	2.4 @ 250µA	18 @ 10V	888 @ 15V	2	150	8-SOIC	Active
AO4822	Alpha & Omega Semiconductor Inc.	30	8	19 @ 8A, 10V	2.4 @ 250µA	18 @ 10V	888 @ 15V	2	150	8-SOIC	Active
AO4854	Alpha & Omega Semiconductor Inc.	30	8	19 @ 8A, 10V	2.4 @ 250µA	18 @ 10V	888 @ 15V	2	150	8-SOIC	Active
BSO150N03MDGXUMA1	Infineon Technologies	30	8	15 @ 9.3A, 10V	2 @ 250µA	17 @ 10V	1300 @ 15V	1.4	150	8-SOIC	Active
BSO220N03MDGXUMA1	Infineon Technologies	30	6	22 @ 7.7A, 10V	2.1 @ 250µA	10 @ 10V	800 @ 15V	1.4	150	8-SOIC	Active
FDS8984	onsemi	30	7	23 @ 7A, 10V	2.5 @ 250µA	13 @ 10V	635 @ 15V	1.6	150	8-SOIC	Active
HAT2092R-EL-E	Renesas Electronics Corporation	30	11	16 @ 5.5A, 10V	2.5 @ 1mA	22 @ 10V	1400 @ 10V	3	150	8-SOIC	Active
IRF7313TRPBF	Infineon Technologies	30	6.5	29 @ 5.8A, 10V	1 @ 250µA	33 @ 10V	650 @ 25V	2	150	8-SOIC	Active

Engineering Selection Recommendations

Primary Recommendation (Category A - Active Status, Full Compatibility):

The AO4818B, AO4822, and AO4854 from Alpha & Omega Semiconductor Inc. are the preferred substitutes for the STS8DNH3LL. These parts maintain identical electrical specifications across all primary parameters: 30V Vdss, 8A continuous drain current, 2W maximum power dissipation, and 150°C junction temperature rating. All three parts are in active product status, ensuring long-term availability and supply chain stability. The 8-SOIC package footprint is identical, enabling direct PCB layout compatibility. On-resistance values of 19 mOhm @ 8A, 10V represent a 14% improvement over the original specification, reducing power dissipation in switching applications. Gate threshold voltage of 2.4V @ 250µA maintains logic-level gate drive compatibility. RoHS3 compliance and MSL 1 rating match the original part specifications.

Secondary Recommendation (Category A - Active Status, Enhanced Performance):

The BSO150N03MDGXUMA1 from Infineon Technologies (OptiMOS™ series) meets all primary substitution criteria with enhanced electrical performance. This part delivers 8A continuous drain current at 30V with superior on-resistance of 15 mOhm @ 9.3A, 10V, representing a 32% improvement over the STS8DNH3LL. The lower on-resistance reduces thermal dissipation in high-frequency switching applications. Gate charge of 17 nC @ 10V and input capacitance of 1300 pF @ 15V are within acceptable ranges. The part is in active product status with RoHS3 compliance. MSL 3 rating (168 hours) requires moisture control during storage and handling compared to the MSL 1 rating of the original part.

Alternative Consideration (Category A - Active Status, Current Derating):

The BSO220N03MDGXUMA1 from Infineon Technologies is suitable for applications where the 8A continuous drain current requirement can be relaxed to 6A. This part offers superior on-resistance matching (22 mOhm @ 7.7A, 10V) and lower gate charge (10 nC @ 10V), reducing switching losses. The 1.4W maximum power dissipation is lower than the original specification, making this part suitable for lower-power applications. Active product status and RoHS3 compliance are maintained.

Legacy Compatibility (Category C - Not For New Designs):

The STS8DNF3LL from STMicroelectronics (STripFET™ II series) provides electrical compatibility with the STS8DNH3LL but carries a "Not For New Designs" status. This part maintains 30V Vdss and 8A continuous drain current specifications with improved on-resistance of 20 mOhm @ 4A, 10V. The 1.6W maximum power dissipation is lower than the original 2W rating. This part is suitable only for legacy system maintenance and repair applications where supply continuity is critical.

Performance Trade-off Consideration (Category A - Active Status, Current Derating):

The FDS8984 from onsemi (PowerTrench® series) operates at 7A continuous drain current, representing a 12.5% derating from the 8A specification. This part offers competitive on-resistance of 23 mOhm @ 7A, 10V and lower input capacitance of 635 pF @ 15V, improving switching speed. Active product status and RoHS3 compliance are maintained. This part is suitable for applications where the 7A rating meets system requirements.

Higher Current Capability (Category A - Active Status, Enhanced Rating):

The HAT2092R-EL-E from Renesas Electronics Corporation provides enhanced current capability at 11A continuous drain current, exceeding the original 8A specification by 37.5%. This part delivers superior on-resistance of 16 mOhm @ 5.5A, 10V and increased maximum power dissipation of 3W. Gate charge of 22 nC @ 10V and input capacitance of 1400 pF @ 10V are within acceptable ranges. Active product status and RoHS3 compliance are maintained. This part is suitable for applications requiring higher current capacity or thermal margin.

Not Recommended (Category B - Performance Degradation):

The IRF7313TRPBF from Infineon Technologies (HEXFET® series) does not meet the primary substitution criterion of 8A continuous drain current, delivering only 6.5A. Additionally, the on-resistance of 29 mOhm @ 5.8A, 10V represents a 32% degradation compared to the STS8DNH3LL specification, and gate charge of 33 nC @ 10V is 230% higher, increasing switching losses. This part is not suitable as a direct substitute.

Frequently Asked Questions (FAQ)

Q1: Can the AO4822 be used as a direct replacement for the STS8DNH3LL in existing designs?

A: Yes. The AO4822 maintains identical electrical specifications across all primary parameters: 30V Vdss, 8A continuous drain current, 2W maximum power dissipation, and 150°C junction temperature. The 8-SOIC package footprint is identical, enabling direct PCB layout compatibility without design modification. The part is in active product status, ensuring long-term availability.

Q2: What is the difference between the AO4818B, AO4822, and AO4854?

A: These three parts are electrically identical in all specified parameters. The differences lie in packaging format: AO4818B is supplied in Tape & Reel (TR), AO4822 packaging is not specified in the provided data, and AO4854 is supplied in Bulk. Selection should be based on procurement and assembly requirements. All three parts are in active product status.

Q3: Why is the BSO150N03MDGXUMA1 recommended despite having lower maximum power dissipation (1.4W vs. 2W)?

A: The BSO150N03MDGXUMA1 delivers superior on-resistance of 15 mOhm @ 9.3A, 10V compared to the STS8DNH3LL at 22 mOhm @ 4A, 10V. Lower on-resistance reduces power dissipation during operation, resulting in lower junction temperatures in typical switching applications. The 1.4W maximum power rating reflects the improved efficiency rather than a limitation. This part is suitable for applications where thermal performance is critical.

Q4: Can the BSO220N03MDGXUMA1 be used if the application requires 8A continuous drain current?

A: No. The BSO220N03MDGXUMA1 is rated for 6A continuous drain current, which is 25% below the 8A requirement of the STS8DNH3LL. Using this part in an 8A application would exceed the device rating and create reliability risk. This part is suitable only for applications where the 6A rating meets system requirements.

Q5: What is the impact of the higher gate threshold voltage (Vgs(th)) in the AO4818B and AO4822 compared to the STS8DNH3LL?

A: The AO4818B and AO4822 have a gate threshold voltage of 2.4V @ 250µA compared to 1V @ 250µA for the STS8DNH3LL. Both values fall within the logic-level gate drive range and are compatible with standard gate driver circuits. The higher threshold voltage in the Alpha & Omega parts requires slightly higher gate drive voltage to achieve full on-state conduction, but this is within the capability of typical gate driver ICs operating at 5V or higher.

Q6: Why does the HAT2092R-EL-E have a higher gate charge (22 nC) compared to the STS8DNH3LL (10 nC)?

A: The HAT2092R-EL-E is rated for 11A continuous drain current, which is 37.5% higher than the STS8DNH3LL at 8A. Higher current capability requires larger die area and larger gate structure, resulting in increased gate charge. The 22 nC gate charge is within acceptable ranges for logic-level MOSFETs and is compatible with standard gate driver circuits. The higher gate charge results in slightly longer switching times but does not prevent direct substitution in applications where the higher current rating is beneficial.

Q7: What is the significance of the MSL 3 rating for the BSO150N03MDGXUMA1 compared to the MSL 1 rating of the STS8DNH3LL?

A: MSL 3 (168 hours) indicates that the BSO150N03MDGXUMA1 requires moisture control during storage and handling. The part must be stored in a dry environment and has a limited shelf life after the moisture barrier bag is opened. MSL 1 (Unlimited) for the STS8DNH3LL indicates no moisture sensitivity. When using the BSO150N03MDGXUMA1, follow standard moisture control procedures including baking before reflow soldering if the part has been exposed to ambient humidity for extended periods.

Q8: Is the STS8DNF3LL suitable for new product designs?

A: No. The STS8DNF3LL carries a "Not For New Designs" product status, indicating that STMicroelectronics does not recommend this part for new circuit implementations. This part should be used only for legacy system maintenance and repair where supply continuity is critical. For new designs, select from the active-status alternatives such as AO4818B, AO4822, AO4854, or BSO150N03MDGXUMA1.

Q9: Can the FDS8984 be used in applications requiring exactly 8A continuous drain current?

A: The FDS8984 is rated for 7A continuous drain current, which is 12.5% below the 8A requirement. Using this part in an application requiring 8A would exceed the device rating. However, this part is suitable for applications where the 7A rating meets system requirements or where thermal margin allows operation below the maximum rated current.

Q10: What are the key parameters to verify when substituting the STS8DNH3LL in an existing design?

A: Verify the following parameters in the target application: (1) Drain-to-Source Voltage: Substitute must support 30V or higher; (2) Continuous Drain Current: Substitute must support 8A or higher at 25°C; (3) Package / Case: Substitute must use 8-SOIC footprint for PCB compatibility; (4) Maximum Power Dissipation: Substitute must support 2W or higher; (5) Junction Temperature: Substitute must support 150°C or higher; (6) Gate Drive Voltage: Verify gate threshold voltage compatibility with existing gate driver circuit; (7) Switching Frequency: Verify gate charge and input capacitance compatibility with circuit timing requirements.

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