STS6PF30L P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STS6PF30L is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in 8-SOIC surface mount configuration and is part of the STripFET™ series. The part is currently classified as obsolete, making equivalent and substitute components necessary for ongoing production and design continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting RoHS3 compliance and MSL Level 1 requirements.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	-
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ 10V Vgs	30	mOhm
Power Dissipation (Max)	2.5	W
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Operating Temperature (TJ)	150	°C
Package Type	8-SOIC	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the STS6PF30L is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel (mandatory)
Drain to Source Voltage (Vdss): 30V minimum (equal or higher acceptable)
Continuous Drain Current (Id): 6A minimum at 25°C (equal or higher acceptable)
Package Type: 8-SOIC surface mount (mechanical compatibility)
RoHS3 Compliance: Required
Moisture Sensitivity Level: MSL 1 (Unlimited)

Secondary Compatibility Parameters:

Rds On (Max) @ 10V Vgs: Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be within acceptable switching range
Power Dissipation: 2.5W or higher acceptable
Operating Temperature: 150°C minimum

Substitute parts are grouped into two categories: direct electrical equivalents (matching or exceeding all primary parameters) and functional alternatives (meeting minimum requirements with enhanced performance characteristics).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Power Diss. (W)	Temp Range (°C)	Package	Status
STS6PF30L	STMicroelectronics	30	6	30	2.5	2.5	-55 to 150	8-SOIC	Obsolete
SI4435DYTRPBF	Infineon Technologies	30	8	20	1	2.5	-55 to 150	8-SOIC	Active
IRF7416TRPBF	Infineon Technologies	30	10	20	1	2.5	-55 to 150	8-SOIC	Active
AO4405	UMW	30	6	45	2.5	3.1	-55 to 150	8-SOIC	Active
AO4411	Alpha & Omega Semiconductor Inc.	30	8	32	2.4	3.1	-55 to 150	8-SOIC	Not For New Designs
AO4449	Alpha & Omega Semiconductor Inc.	30	7	34	2.4	3.1	-55 to 150	8-SOIC	Not For New Designs
FDS4435BZ	onsemi	30	8.8	20	3	2.5	-55 to 150	8-SOIC	Active
FDS9435A	onsemi	30	5.3	50	3	2.5	-55 to 175	8-SOIC	Active
IRF7240TRPBF	Infineon Technologies	40	10.5	15	3	2.5	-55 to 150	8-SOIC	Active
ZXMP3A16N8TA	Diodes Incorporated	30	5.6	40	1	1.9	-55 to 150	8-SOIC	Active

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended for Replacement):

SI4435DYTRPBF and IRF7416TRPBF are the primary substitutes for STS6PF30L. Both are manufactured by Infineon Technologies, carry Active product status, and exceed the minimum electrical requirements. SI4435DYTRPBF provides 8A continuous drain current with 20mOhm Rds On, while IRF7416TRPBF delivers 10A with identical on-resistance. Both maintain 30V Vdss rating, 2.5W power dissipation, and -55°C to 150°C operating range. Both are RoHS3 compliant with MSL Level 1 rating.

Tier 2 - Functional Alternatives (Performance Enhancement):

FDS4435BZ (onsemi, PowerTrench® series) offers 8.8A continuous drain current with superior 20mOhm Rds On and Active status. This part provides enhanced current handling and reduced on-resistance compared to the original STS6PF30L. AO4405 (UMW) matches the 6A current rating of the original part with Active status, though Rds On is higher at 45mOhm. Both maintain 30V Vdss and 8-SOIC packaging.

Tier 3 - Limited Substitution (Conditional Use):

AO4411 and AO4449 (Alpha & Omega Semiconductor Inc.) meet electrical requirements but carry "Not For New Designs" status, limiting their suitability for new production. FDS9435A (onsemi) provides lower continuous drain current (5.3A) than the original specification, making it suitable only for applications with reduced current demands. ZXMP3A16N8TA (Diodes Incorporated) similarly falls below the 6A requirement at 5.6A. IRF7240TRPBF exceeds voltage rating at 40V Vdss, suitable only when higher voltage margin is required.

All recommended substitutes maintain RoHS3 compliance and MSL Level 1 moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can SI4435DYTRPBF directly replace STS6PF30L in existing designs?

A: Yes. SI4435DYTRPBF meets or exceeds all primary electrical parameters: 30V Vdss, 8A continuous drain current (exceeds 6A requirement), 20mOhm Rds On (improved from 30mOhm), and identical 8-SOIC packaging. Both are RoHS3 compliant with MSL Level 1 rating. Pin configuration and thermal characteristics are compatible.

Q: What is the difference between Rds On specifications at different current levels?

A: Rds On (on-resistance) varies with gate-source voltage (Vgs) and drain current (Id). The STS6PF30L specifies 30mOhm @ 3A, 10V Vgs, while substitutes typically specify Rds On @ higher current levels (e.g., 20mOhm @ 8A, 10V). Lower Rds On values indicate reduced power dissipation and improved efficiency at rated currents.

Q: Are parts marked "Not For New Designs" acceptable for replacement?

A: AO4411 and AO4449 are electrically compatible but carry "Not For New Designs" status, indicating manufacturer discontinuation plans. These parts are acceptable for legacy system repairs or low-volume applications but not recommended for new production designs requiring long-term supply assurance.

Q: Does package type affect substitution compatibility?

A: Yes. All listed substitutes use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, ensuring mechanical and thermal compatibility with STS6PF30L footprints. Pin assignments and lead spacing are identical across all listed parts.

Q: What is the significance of gate threshold voltage (Vgs(th)) differences?

A: Vgs(th) determines the gate voltage required to initiate conduction. STS6PF30L specifies 2.5V @ 250µA, while some substitutes specify 1V or 3V. Lower threshold voltages enable faster switching at lower drive voltages; higher thresholds provide greater noise immunity. Selection depends on gate driver circuit design.

Q: Can FDS9435A be used as a substitute despite lower current rating?

A: FDS9435A (5.3A) falls below the 6A continuous drain current requirement of STS6PF30L. Substitution is acceptable only in applications where actual current demand does not exceed 5.3A, verified through circuit analysis. Exceeding this rating causes thermal stress and device failure.

Q: What does MSL Level 1 (Unlimited) mean for component handling?

A: MSL Level 1 indicates unlimited shelf life without moisture baking requirements. Components can be stored at room temperature without time restrictions, simplifying inventory management and reducing handling costs compared to higher MSL ratings.

Q: Are there performance advantages to selecting IRF7416TRPBF over SI4435DYTRPBF?

A: IRF7416TRPBF provides higher continuous drain current (10A vs. 8A) and lower gate threshold voltage (1V vs. 1V), with identical Rds On (20mOhm) and power dissipation (2.5W). Selection depends on application current requirements and gate driver voltage availability. Both are Active status parts with equivalent reliability.

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