STS5N15F4 N-Channel MOSFET 150V 5A Equivalent & Substitute Parts

Part Overview

The STS5N15F4 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 150V drain-to-source voltage with 5A continuous drain current at 25°C. This device operates in the Surface Mount 8-SOIC package and is part of the DeepGATE™ and STripFET™ series. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters within the same package form factor. Substitutes must maintain compatibility with 150V drain-to-source voltage rating, similar gate threshold voltage characteristics, and identical Surface Mount 8-SOIC packaging to ensure direct board-level replacement capability.

Key Parameters

Parameter	STS5N15F4 Value	Unit	Substitution Relevance
Drain-to-Source Voltage (Vdss)	150	V	Critical - Must match or exceed
Continuous Drain Current (Id) @ 25°C	5	A	Critical - Minimum acceptable rating
On-State Resistance (Rds On) @ 2.5A, 10V	63	mOhm	Important - Affects power dissipation
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V	Important - Drive compatibility
Gate Charge (Qg) @ 10V	48	nC	Important - Switching speed
Power Dissipation (Max)	2.5	W	Important - Thermal management
Package Type	8-SOIC	-	Critical - Physical compatibility
Operating Temperature Range	-55 to 150	°C	Important - Environmental compatibility

Substitute Part Grouping Explanation

Substitute parts for the STS5N15F4 are selected based on the following substitution criteria:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 150V (exact match required)
Package Type: 8-SOIC Surface Mount (exact match required)
Operating Temperature Range: -55°C to 150°C (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)

Acceptable Variation Parameters:

Continuous Drain Current (Id): Minimum 3.5A (substitutes with lower ratings acceptable for current-limited applications)
On-State Resistance (Rds On): Substitutes with lower resistance values are acceptable; higher values require thermal analysis
Gate Threshold Voltage (Vgs(th)): Range 2V to 5.5V acceptable for standard logic-level drive circuits
Gate Charge (Qg): Lower values indicate faster switching; higher values acceptable for lower-frequency applications
Power Dissipation: Substitutes with equal or higher ratings acceptable

All identified substitutes maintain 150V Vdss rating, 8-SOIC package configuration, and -55°C to 150°C operating range. Substitutes are sourced from qualified manufacturers (onsemi, Infineon Technologies, Vishay Siliconix) with Active product status and RoHS3 compliance.

Parameter Comparison

Parameter	STS5N15F4 (STMicroelectronics)	FDS2582 (onsemi)	FDS86242 (onsemi)	FDS86252 (onsemi)	IRF7451TRPBF (Infineon)	SI4488DY-T1-E3 (Vishay)
Vdss (V)	150	150	150	150	150	150
Id @ 25°C (A)	5	4.1	4.1	4.5	3.6	3.5
Rds On @ 10V (mOhm)	63 @ 2.5A	66 @ 4.1A	67 @ 4.1A	55 @ 4.5A	90 @ 2.2A	50 @ 5A
Vgs(th) @ 250µA (V)	4	4	4	4	5.5	2
Qg @ 10V (nC)	48	25	13	15	41	36
Ciss @ Vds (pF)	2710 @ 25V	1290 @ 25V	760 @ 75V	955 @ 75V	990 @ 25V	Not specified
Power Dissipation (W)	2.5	2.5	2.5 / 5	2.5 / 5	2.5	1.56
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SO	8-SOIC
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

All identified substitute parts maintain Active product status with full RoHS3 compliance and MSL 1 rating, ensuring regulatory and environmental compatibility with the original STS5N15F4 specification.

FDS2582 (onsemi PowerTrench®): Suitable for applications where continuous drain current requirement is 4.1A or less. Gate charge of 25 nC provides faster switching response compared to the main part. Input capacitance of 1290 pF at 25V is significantly lower, reducing gate drive requirements. On-state resistance of 66 mOhm at 4.1A is comparable to the main part.

FDS86242 (onsemi PowerTrench®): Rated for 4.1A continuous drain current with enhanced power dissipation capability (2.5W at Ta, 5W at Tc). Gate charge of 13 nC provides the fastest switching performance among all substitutes. Input capacitance of 760 pF at 75V is the lowest in the group. On-state resistance of 67 mOhm is acceptable for most applications. Dual power rating provides thermal flexibility.

FDS86252 (onsemi PowerTrench®): Rated for 4.5A continuous drain current, closest to the main part's 5A rating. On-state resistance of 55 mOhm at 4.5A is the lowest among all substitutes, reducing power dissipation. Gate charge of 15 nC enables fast switching. Enhanced power dissipation rating (2.5W at Ta, 5W at Tc) supports thermal management in high-frequency applications.

IRF7451TRPBF (Infineon HEXFET®): Rated for 3.6A continuous drain current, suitable for lower-current applications. Gate threshold voltage of 5.5V is the highest in the group, requiring higher gate drive voltage. On-state resistance of 90 mOhm at 2.2A is higher, resulting in increased power dissipation. Gate charge of 41 nC is moderate. Maximum gate voltage rating of ±30V provides wider drive compatibility.

SI4488DY-T1-E3 (Vishay TrenchFET®): Rated for 3.5A continuous drain current with the lowest power dissipation rating (1.56W at Ta). On-state resistance of 50 mOhm at 5A is the lowest in the group, providing superior efficiency. Gate threshold voltage of 2V (minimum) is the lowest, enabling low-voltage gate drive circuits. Gate charge of 36 nC is moderate. Input capacitance specification not provided in available data.

Frequently Asked Questions (FAQ)

Q: Can the STS5N15F4 be directly replaced with any of these substitute parts?

A: Direct replacement is possible only when the application's continuous drain current requirement does not exceed the substitute part's rated current. FDS86252 (4.5A) is the closest match to the original 5A rating. Lower-rated substitutes (3.5A to 4.1A) are suitable for applications drawing less than their rated current. Physical pin compatibility is maintained across all substitutes in the 8-SOIC package.

Q: What is the impact of lower gate charge (Qg) in substitute parts?

A: Lower gate charge values (FDS86242 at 13 nC, FDS86252 at 15 nC) indicate faster switching transitions and reduced gate drive power requirements compared to the main part (48 nC). This results in lower switching losses and reduced electromagnetic interference in high-frequency applications. Gate drive circuits may require adjustment for optimal performance.

Q: Are there differences in on-state resistance (Rds On) that affect circuit performance?

A: On-state resistance varies across substitutes from 50 mOhm (SI4488DY-T1-E3) to 90 mOhm (IRF7451TRPBF). Lower resistance values reduce conduction losses and heat generation. The main part specifies 63 mOhm at 2.5A and 10V. FDS86252 (55 mOhm) and SI4488DY-T1-E3 (50 mOhm) provide improved efficiency, while IRF7451TRPBF (90 mOhm) results in higher power dissipation.

Q: How do gate threshold voltage differences affect circuit compatibility?

A: Gate threshold voltage (Vgs(th)) ranges from 2V (SI4488DY-T1-E3) to 5.5V (IRF7451TRPBF). The main part and most onsemi substitutes specify 4V, compatible with standard 5V and 3.3V logic circuits. SI4488DY-T1-E3 with 2V threshold enables operation with lower gate drive voltages. IRF7451TRPBF with 5.5V threshold requires higher gate drive voltage for full on-state performance.

Q: What is the significance of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive circuit design and switching speed. The main part specifies 2710 pF at 25V, the highest in the group. Substitutes with lower Ciss values (FDS86242 at 760 pF, FDS86252 at 955 pF) require less gate charge and enable faster switching with reduced driver power consumption. Lower Ciss also reduces electromagnetic interference in switching applications.

Q: Can substitutes with lower continuous drain current ratings be used in the original application?

A: Substitutes with lower current ratings (3.5A to 4.5A) are suitable only when the actual circuit current draw remains below the substitute's rated value. Exceeding the rated continuous drain current results in thermal stress and reduced device lifetime. Circuit analysis must confirm that peak and average drain currents do not exceed the substitute part's specification.

Q: Are all substitutes available in the same packaging options as the main part?

A: All substitutes are available in 8-SOIC Surface Mount package. FDS86252 and SI4488DY-T1-E3 are supplied in Tape & Reel (TR) packaging, while FDS2582, FDS86242, and IRF7451TRPBF are available in Cut Tape (CT) and Digi-Reel® options. Packaging format does not affect electrical performance or pin compatibility.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts maintain RoHS3 compliance, REACH Unaffected status, and MSL 1 (Unlimited) moisture sensitivity rating, matching the original STS5N15F4 specification. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. Regulatory and environmental compatibility is maintained across all substitutes.

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