STS5DPF20L Equivalent & Substitute Parts

Part Overview

The STS5DPF20L is a dual P-channel MOSFET array manufactured by STMicroelectronics, designed for surface mount applications requiring logic level gate control at 20V drain-source voltage with 5A continuous drain current capability. This device is part of the STripFET™ II series and is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

STS5DPF20L

STMicroelectronicsIn Stock: 1143STS5DPF20L Datasheet

Current PartRFQ

IRF7314TRPBF

Infineon TechnologiesIn Stock: 15381IRF7314TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STS5DPF20L is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Drain to Source Voltage (Vdss): 20V minimum
• Continuous Drain Current (Id): 5A or greater at 25°C
• Configuration: Dual P-channel MOSFET array
• Gate control: Logic level gate operation
• On-state resistance (Rds On): Performance within acceptable operating margins

Mechanical & Packaging Equivalence Criteria:

• Package type: 8-SOIC surface mount
• Pin count and footprint: 8-pin configuration with 0.154" (3.90mm) width
• Mounting compatibility: Surface mount technology

Compliance & Regulatory Equivalence Criteria:

• RoHS3 compliance
• Moisture Sensitivity Level: MSL 1 or equivalent
• REACH compliance status

The IRF7314TRPBF meets all substitution criteria through equivalent electrical performance, identical package geometry, and matching regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: IRF7314TRPBF

The IRF7314TRPBF is a direct functional equivalent for the STS5DPF20L based on the following engineering criteria:

Electrical Performance: The IRF7314TRPBF exceeds the minimum electrical specifications of the STS5DPF20L. Continuous drain current is rated at 5.3A compared to 5A, providing 6% additional current capacity. On-state resistance is 58 mOhm versus 55 mOhm, representing a negligible 5.5% increase within acceptable operating margins for dual P-channel MOSFET arrays. Maximum power dissipation is 2W versus 1.6W, offering improved thermal headroom.

Package Compatibility: Both devices utilize identical 8-SOIC surface mount packaging with 0.154" (3.90mm) width, ensuring direct PCB footprint compatibility without layout modifications.

Regulatory Compliance: Both parts maintain ROHS3 compliance, MSL 1 rating, and REACH unaffected status, satisfying identical regulatory requirements for procurement and deployment.

Product Status Consideration: The IRF7314TRPBF carries a Last Time Buy status, indicating limited future availability. For long-term production requirements, this substitution should be evaluated within the context of supply chain planning and design lifecycle management.

Frequently Asked Questions (FAQ)

Q: Can the IRF7314TRPBF be used as a direct replacement for the STS5DPF20L without PCB modifications?

A: Yes. Both devices share identical 8-SOIC package geometry with 0.154" (3.90mm) width and surface mount configuration. Pin-to-pin compatibility and footprint alignment are equivalent, eliminating the requirement for PCB layout changes.

Q: What are the key electrical differences between these two parts?

A: The IRF7314TRPBF provides higher continuous drain current (5.3A versus 5A) and greater maximum power dissipation (2W versus 1.6W). On-state resistance is marginally higher (58 mOhm versus 55 mOhm). Gate threshold voltage is lower (0.7V versus 2.5V), indicating enhanced logic level gate sensitivity. These differences represent performance improvements or equivalent operation within the specified parameter ranges.

Q: Are there any thermal or operating temperature considerations?

A: The IRF7314TRPBF specifies an extended operating temperature range of -55°C to 150°C compared to the STS5DPF20L maximum of 150°C. This provides additional low-temperature operational capability. Both devices maintain identical maximum junction temperature limits.

Q: How do gate charge and input capacitance differences affect circuit design?

A: The IRF7314TRPBF exhibits higher gate charge (29 nC versus 16 nC) and lower input capacitance (780 pF versus 1350 pF). These characteristics may influence gate driver design and switching speed performance. Circuit validation is necessary to confirm compatibility with existing gate drive circuitry.

Q: What is the significance of the product status difference between these parts?

A: The STS5DPF20L is classified as obsolete, indicating discontinued production and limited availability. The IRF7314TRPBF carries Last Time Buy status, signifying restricted future availability with a defined end-of-life date. Both statuses necessitate supply chain planning for long-term production requirements.

Q: Are both parts compliant with the same regulatory standards?

A: Yes. Both the STS5DPF20L and IRF7314TRPBF maintain ROHS3 compliance, MSL 1 rating, and REACH unaffected status. Regulatory requirements for procurement, handling, and deployment are identical.