STS5DNF20V MOSFET Equivalent & Substitute Parts

Part Overview

The STS5DNF20V is a dual N-channel MOSFET manufactured by STMicroelectronics, part of the STripFET™ II series. This device features a 20V drain-to-source voltage rating with 5A continuous drain current capability and is housed in an 8-SOIC surface mount package. The part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and procurement.

Substiute Parts

STS5DNF20V

STMicroelectronicsIn Stock: 100409STS5DNF20V Datasheet

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FDS9926A

onsemiIn Stock: 74335FDS9926A Datasheet

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IRF7313TRPBF

Infineon TechnologiesIn Stock: 24841IRF7313TRPBF Datasheet

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NTMD6N02R2G

onsemiIn Stock: 15336NTMD6N02R2G Datasheet

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ZXMN2A04DN8TA

Diodes IncorporatedIn Stock: 6823ZXMN2A04DN8TA Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STS5DNF20V is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Configuration: 2 N-Channel (Dual) MOSFET
• Drain to Source Voltage (Vdss): 20V minimum
• Continuous Drain Current (Id): 5A minimum at 25°C
• Package / Case: 8-SOIC surface mount form factor
• Operating Temperature Range: -55°C to 150°C
• Logic Level Gate operation capability
• RoHS3 compliance and MSL 1 rating

Acceptable Variation Parameters:

• Rds On (Max): Values equal to or lower than 40mOhm are acceptable
• Gate Charge (Qg): Values equal to or lower than 11.5nC are acceptable
• Input Capacitance (Ciss): Values equal to or lower than 460pF are acceptable
• Power dissipation: Values equal to or greater than 2W are acceptable
• Vgs(th): Values within logic level gate specifications are acceptable

All substitute parts listed maintain the dual N-channel configuration, 20V Vdss rating, and 8-SOIC package requirement. Drain current ratings of 5A or higher satisfy the minimum current requirement. All substitute parts are active products with current manufacturing status and full RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

FDS9926A (onsemi PowerTrench®)

The FDS9926A is a direct functional equivalent with matching 20V Vdss and 8-SOIC package. It provides superior performance with 6.5A continuous drain current (30% higher than STS5DNF20V), lower Rds On of 30mOhm, and reduced gate charge of 9nC. The part is active in production with full RoHS3 compliance and MSL 1 rating. This substitute is suitable for applications requiring improved efficiency and thermal performance.

ZXMN2A04DN8TA (Diodes Incorporated)

The ZXMN2A04DN8TA maintains the 20V Vdss specification and 8-SOIC package with 5.9A continuous drain current (exceeding the 5A requirement). It features the lowest Rds On at 25mOhm and gate charge of 22.1nC. The part is active in production with full RoHS3 compliance and MSL 1 rating. This substitute offers the best on-resistance performance for power efficiency applications.

NTMD6N02R2G (onsemi)

The NTMD6N02R2G maintains 20V Vdss and 8-SOIC package specifications. With 3.92A continuous drain current, this part falls below the 5A requirement and is suitable only for applications with reduced current demands. It is active in production with full RoHS3 compliance and MSL 1 rating. Selection of this part requires verification that application current requirements do not exceed 3.92A.

IRF7313TRPBF (Infineon Technologies HEXFET®)

The IRF7313TRPBF provides 30V Vdss (50% higher than STS5DNF20V) with 6.5A continuous drain current and 8-SOIC package. The elevated voltage rating provides additional design margin for overvoltage conditions. Rds On is 29mOhm with gate charge of 33nC. The part is active in production with full RoHS3 compliance and MSL 1 rating. This substitute is appropriate for applications requiring higher voltage headroom.

Frequently Asked Questions (FAQ)

Q: Can the FDS9926A directly replace the STS5DNF20V in all applications?

A: The FDS9926A is electrically compatible with the STS5DNF20V for applications operating at or below 20V with drain currents up to 5A. Both parts share the same 8-SOIC package, dual N-channel configuration, and logic level gate operation. The FDS9926A provides improved performance characteristics with lower on-resistance and gate charge. Verification of circuit design margins is required for any substitution.

Q: What is the primary difference between the ZXMN2A04DN8TA and FDS9926A?

A: Both parts maintain 20V Vdss and 8-SOIC packaging. The ZXMN2A04DN8TA features lower on-resistance (25mOhm versus 30mOhm) and higher input capacitance (1880pF versus 650pF). The FDS9926A has lower gate charge (9nC versus 22.1nC). Selection depends on whether the application prioritizes on-resistance efficiency or gate drive speed.

Q: Why is the NTMD6N02R2G listed as a substitute if its drain current is only 3.92A?

A: The NTMD6N02R2G is listed as a substitute for applications where the actual continuous drain current requirement is below 5A. The part maintains the critical 20V Vdss rating and 8-SOIC package. Applications must be evaluated to confirm that peak and continuous current demands do not exceed 3.92A before selecting this part.

Q: Is the IRF7313TRPBF suitable for direct replacement in 20V-rated circuits?

A: The IRF7313TRPBF is suitable for direct replacement in 20V-rated circuits. Its 30V Vdss rating provides additional voltage margin and does not create incompatibility. The part maintains the 8-SOIC package and dual N-channel configuration. The higher voltage rating may improve circuit reliability in applications subject to transient overvoltages.

Q: Are all substitute parts RoHS3 compliant and MSL 1 rated?

A: All substitute parts listed (FDS9926A, IRF7313TRPBF, NTMD6N02R2G, and ZXMN2A04DN8TA) are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings. All parts are suitable for standard PCB assembly and storage conditions without special handling requirements.

Q: What is the significance of the 8-SOIC package specification?

A: The 8-SOIC package is a standard surface mount form factor with 0.154-inch (3.90mm) width. All substitute parts maintain this identical package specification, ensuring mechanical and electrical compatibility with existing PCB layouts. No board redesign is required when substituting between parts with matching 8-SOIC packaging.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (FDS9926A at 9nC) reduces gate drive power requirements and enables faster switching. Higher gate charge (IRF7313TRPBF at 33nC) requires more gate drive energy but may provide improved noise immunity. Selection depends on gate driver capability and switching frequency requirements.

Q: Can these parts be used interchangeably in existing designs?

A: Substitution requires verification that the replacement part's electrical characteristics are compatible with circuit design margins. All listed parts maintain the 20V Vdss and 8-SOIC package specifications. Differences in on-resistance, gate charge, and input capacitance may affect circuit performance. Circuit simulation or testing is recommended to confirm compatibility before production implementation.