STS4NF100 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STS4NF100 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 100V drain-to-source voltage with 4A continuous drain current in an 8-SOIC surface mount package. This device is part of the STripFET™ II series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production runs and system updates.

Substiute Parts

STS4NF100

STMicroelectronicsIn Stock: 15323STS4NF100 Datasheet

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STL30N10F7

STMicroelectronicsIn Stock: 3679STL30N10F7 Datasheet

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94-3660PBF

Infineon TechnologiesIn Stock: 87894-3660PBF Datasheet

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AO4486

UMWIn Stock: 1976AO4486 Datasheet

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FDS3512

onsemiIn Stock: 10164FDS3512 Datasheet

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FDS3590

onsemiIn Stock: 23324FDS3590 Datasheet

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FDS3692

onsemiIn Stock: 15959FDS3692 Datasheet

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IRF7490TRPBF

Infineon TechnologiesIn Stock: 29225IRF7490TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STS4NF100 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must be ≥100V to maintain voltage rating compatibility
• Continuous Drain Current (Id): Must be ≥4A to support the application current requirement
• Package Type: Must be 8-SOIC or equivalent footprint for PCB compatibility
• Gate Threshold Voltage (Vgs(th)): Must be within ±1V of the original specification for gate drive circuit compatibility
• Maximum Gate-Source Voltage (Vgs): Must support ±20V operation
• RoHS3 Compliance: Required for regulatory alignment
• Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for handling consistency

Substitution Logic: Parts are grouped into two categories based on their electrical performance relative to the STS4NF100:

1. Direct Substitutes (100V Rating, 4A+ Current, 8-SOIC Package): Parts that maintain the exact voltage rating and package footprint with equivalent or superior current handling and on-resistance characteristics.

2. Functional Alternatives (100V Rating, Higher Current Capability): Parts that exceed the current rating or offer enhanced thermal performance while maintaining voltage compatibility and package compatibility.

Parts with Vdss ratings below 100V (such as FDS3512 and FDS3590 at 80V) are included for reference but require circuit voltage derating analysis and are not recommended as direct substitutes for 100V applications.

Parameter Comparison

Engineering Selection Recommendations

Tier 1 Direct Substitutes (100V, 8-SOIC Package, Active Status):

FDS3692 (onsemi PowerTrench® Series) is the primary recommended substitute. It maintains 100V Vdss rating, provides 4.5A continuous drain current (12.5% higher than STS4NF100), operates within the same temperature range (-55°C to 150°C), and is housed in the identical 8-SOIC package. The part is currently in active production status with 15,855 units in stock. Gate threshold voltage (4V @ 250µA) matches the original specification exactly. On-resistance of 60 mOhm @ 4.5A, 10V is superior to the STS4NF100 specification. Gate charge of 15 nC @ 10V is significantly lower, reducing switching losses. RoHS3 compliance and MSL 1 rating ensure regulatory and handling compatibility.

IRF7490TRPBF (Infineon HEXFET® Series) is a secondary direct substitute. It maintains 100V Vdss rating with 5.4A continuous drain current (35% higher than STS4NF100) in an 8-SOIC package. Active production status with 29,200 units in stock. Gate threshold voltage of 4V @ 250µA matches the original. On-resistance of 39 mOhm @ 3.2A, 10V is superior. Gate charge of 56 nC @ 10V is higher than FDS3692 but acceptable for most applications. Input capacitance of 1720 pF @ 25V is notably higher, which may affect switching speed in high-frequency applications. RoHS3 compliant with MSL 1 rating.

94-3660PBF (Infineon) is a compatible substitute with 100V Vdss and 4.5A continuous drain current in 8-SOIC package. Active production status with 777 units in stock. Gate threshold voltage of 5.5V @ 250µA is 1.5V higher than the original, requiring verification of gate drive circuit compatibility. On-resistance of 60 mOhm @ 2.7A, 10V is acceptable. Gate charge of 50 nC @ 10V is higher than FDS3692. RoHS3 compliant with MSL 1 rating.

AO4486 (UMW) is a compatible substitute with 100V Vdss and 4.2A continuous drain current in 8-SOIC package. Active production status with 1,879 units in stock. Gate threshold voltage of 2.7V @ 250µA is 1.3V lower than the original, which may affect gate drive timing. On-resistance of 79 mOhm @ 5A, 10V is higher than the original specification. Power dissipation of 3.1W (Ta) exceeds the STS4NF100 rating of 2.5W. RoHS3 compliant with MSL 1 rating.

Tier 2 Enhanced Performance Alternative (100V, Different Package, Active Status):

STL30N10F7 (STMicroelectronics DeepGATE™/STripFET™ VII Series) is a performance-enhanced alternative from the same manufacturer. It maintains 100V Vdss rating with significantly higher 30A continuous drain current (7.5× the original) and 75W power dissipation capability. Housed in PowerFlat™ (5x6) package, which differs from the 8-SOIC footprint and requires PCB layout redesign. Active production status with 3,638 units in stock. Gate threshold voltage of 4.5V @ 250µA is within acceptable tolerance. On-resistance of 35 mOhm @ 4A, 10V is superior. Operating temperature range extends to 175°C. RoHS3 compliant with MSL 1 rating. This part is suitable only for applications where thermal performance and current capacity are critical and PCB redesign is feasible.

Product Status Consideration: All recommended substitutes are in active production status, ensuring long-term availability and supply chain stability. The STS4NF100 obsolete status necessitates transition to one of these active alternatives for new designs and production continuity.

Frequently Asked Questions (FAQ)

Q: Can FDS3692 be used as a direct replacement for STS4NF100 without PCB modifications?

A: Yes. FDS3692 is housed in the identical 8-SOIC package with the same pinout and footprint as STS4NF100. No PCB layout changes are required. Electrical parameters are compatible, with FDS3692 offering superior performance (lower on-resistance, lower gate charge, higher current rating).

Q: What is the primary difference between FDS3692 and IRF7490TRPBF?

A: Both are 100V, 8-SOIC direct substitutes. FDS3692 has lower gate charge (15 nC vs. 56 nC), making it more suitable for high-frequency switching applications. IRF7490TRPBF has higher current rating (5.4A vs. 4.5A) and lower on-resistance at lower current levels (39 mOhm @ 3.2A vs. 60 mOhm @ 4.5A), making it better for high-current, lower-frequency applications.

Q: Why is 94-3660PBF listed as a substitute if its gate threshold voltage is 5.5V instead of 4V?

A: 94-3660PBF meets the core electrical requirements (100V Vdss, 4.5A Id, 8-SOIC package, RoHS3 compliance). The 1.5V higher gate threshold voltage requires verification that the gate drive circuit can reliably turn the device on and off. In many applications with adequate gate drive voltage, this difference is acceptable. However, circuits with marginal gate drive voltage should use FDS3692 or IRF7490TRPBF instead.

Q: Can AO4486 be used in high-temperature applications?

A: AO4486 operates within -55°C to 150°C, matching the STS4NF100 temperature range. However, its power dissipation rating of 3.1W (Ta) exceeds the original 2.5W specification. In applications approaching maximum power dissipation, thermal analysis is required to ensure the device does not exceed junction temperature limits.

Q: Is STL30N10F7 a suitable substitute for STS4NF100?

A: STL30N10F7 is electrically compatible (100V Vdss, superior current and power handling) but housed in a different PowerFlat™ (5x6) package instead of 8-SOIC. Direct PCB substitution is not possible without layout redesign. This part is suitable only for new designs where the enhanced thermal performance and current capacity justify PCB modifications.

Q: What does MSL 1 (Unlimited) mean for component handling?

A: MSL 1 (Unlimited) indicates the component has unlimited shelf life and does not require special moisture-controlled storage or baking procedures before soldering. All listed substitutes carry this rating, ensuring consistent handling requirements with the original STS4NF100.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitutes (FDS3692, IRF7490TRPBF, 94-3660PBF, AO4486, and STL30N10F7) are RoHS3 compliant, meeting the same regulatory requirements as the original STS4NF100.

Q: Which substitute has the lowest on-resistance?

A: STL30N10F7 has the lowest on-resistance at 35 mOhm @ 4A, 10V, followed by IRF7490TRPBF at 39 mOhm @ 3.2A, 10V. For 8-SOIC package alternatives, IRF7490TRPBF offers the lowest on-resistance among direct footprint substitutes.

Q: Which substitute has the lowest gate charge?

A: FDS3692 has the lowest gate charge at 15 nC @ 10V, making it the optimal choice for high-frequency switching applications where gate charge minimization reduces switching losses and improves efficiency.

Q: Can these substitutes be used in parallel for higher current applications?

A: Parallel operation of MOSFETs requires careful circuit design to ensure current sharing and thermal balance. The provided specifications do not include information necessary for parallel operation analysis. Circuit design verification is required for any parallel configuration.