STS4DNF60 Equivalent & Substitute Parts

Part Overview

The STS4DNF60 is a dual N-channel MOSFET array manufactured by STMicroelectronics in the STripFET™ series. This device integrates two N-channel MOSFETs in a single 8-SOIC surface mount package, rated for 60V drain-to-source voltage and 4A continuous drain current at 25°C. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, gate characteristics, and thermal performance within the specified operating temperature range.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	4	A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2A, 10V	mOhm
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	315	pF @ 25V
Power - Max	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	-
Configuration	2 N-Channel (Dual)	-
FET Feature	Logic Level Gate	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the STS4DNF60 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Vdss rating equal to or greater than 60V to ensure safe operation in the original application circuit.

Current Capacity: Substitute parts must support continuous drain current (Id) at 25°C equal to or greater than 4A to meet or exceed the original device performance.

On-Resistance (Rds On): The on-resistance characteristic at specified gate and drain conditions determines switching losses and thermal performance. Substitute parts with lower Rds On values provide improved efficiency.

Gate Threshold Voltage (Vgs(th)): Logic level gate operation requires Vgs(th) values compatible with standard digital control signals. Substitute parts must maintain logic level gate characteristics.

Package Compatibility: All substitute parts must use the 8-SOIC surface mount package (0.154", 3.90mm width) to ensure mechanical and electrical compatibility with existing PCB layouts.

Thermal and Environmental Compliance: Operating temperature range, RoHS compliance, and moisture sensitivity level must align with the original specification to maintain reliability and regulatory compliance.

Parameter Comparison

Parameter	STS4DNF60	STS4DNF60L	BSO604NS2XUMA1	FDS9945	HUFA76407DK8T-F085	IRF7341TRPBF	IRF7380TRPBF	NDS9945
Manufacturer	STMicroelectronics	STMicroelectronics	Infineon Technologies	onsemi	onsemi	Infineon Technologies	Infineon Technologies	onsemi
Vdss (V)	60	60	55	60	60	55	80	60
Id @ 25°C (A)	4	4	5	3.5	-	4.7	3.6	3.5
Rds On (mOhm)	90 @ 2A, 10V	55 @ 2A, 10V	35 @ 2.5A, 10V	100 @ 3.5A, 10V	90 @ 3.8A, 10V	50 @ 4.7A, 10V	73 @ 2.2A, 10V	100 @ 3.5A, 10V
Vgs(th) (V)	4 @ 250µA	2.5 @ 250µA	2 @ 30µA	3 @ 250µA	3 @ 250µA	1 @ 250µA	4 @ 250µA	3 @ 250µA
Qg (nC)	10 @ 10V	15 @ 4.5V	26 @ 10V	13 @ 5V	11.2 @ 10V	36 @ 10V	23 @ 10V	30 @ 10V
Ciss (pF)	315 @ 25V	1030 @ 25V	870 @ 25V	420 @ 30V	330 @ 25V	740 @ 25V	660 @ 25V	345 @ 25V
Power - Max (W)	2	2	2	1	2.5	2	2	0.9
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: STS4DNF60L

The STS4DNF60L is the direct successor to the STS4DNF60 within the STMicroelectronics STripFET™ series. Both devices share identical voltage and current ratings (60V, 4A), package configuration (8-SOIC), and operating temperature range (-55°C to 150°C). The STS4DNF60L maintains active product status and ROHS3 compliance. The primary electrical difference is improved on-resistance (55 mOhm versus 90 mOhm at 2A, 10V), resulting in lower switching losses and reduced thermal dissipation. The STS4DNF60L is the recommended direct replacement for obsolete STS4DNF60 applications.

Secondary Substitutes: IRF7341TRPBF and FDS9945

IRF7341TRPBF (Infineon HEXFET® series) and FDS9945 (onsemi PowerTrench® series) are functionally compatible alternatives with active product status. IRF7341TRPBF operates at 55V with 4.7A continuous drain current, providing superior current capacity and lower on-resistance (50 mOhm at 4.7A, 10V). FDS9945 maintains 60V rating with 3.5A continuous drain current and 100 mOhm on-resistance. Both devices are ROHS3 compliant with MSL 1 rating. Selection between these alternatives depends on application requirements for voltage headroom and current margin.

Alternative Substitute: HUFA76407DK8T-F085

The HUFA76407DK8T-F085 (onsemi UltraFET™ series) provides 60V rating with enhanced power dissipation capability (2.5W maximum). This device includes AEC-Q101 automotive qualification and is suitable for applications requiring automotive-grade reliability. On-resistance is 90 mOhm at 3.8A, 10V, matching the original STS4DNF60 characteristic. ROHS3 compliance and MSL 1 rating are maintained.

Higher Voltage Alternative: IRF7380TRPBF

The IRF7380TRPBF (Infineon HEXFET® series) operates at 80V drain-to-source voltage with 3.6A continuous drain current. This device is suitable for applications requiring higher voltage margin or operating in circuits with transient overvoltage conditions. On-resistance is 73 mOhm at 2.2A, 10V. ROHS3 compliance and MSL 1 rating are maintained. Selection of this device introduces additional voltage headroom at the cost of reduced current capacity relative to the original specification.

Compatibility Considerations:

All substitute parts maintain 8-SOIC surface mount package compatibility, enabling direct PCB layout reuse. Gate threshold voltage variations (1V to 4V) require circuit verification to ensure proper logic level gate drive compatibility. Moisture sensitivity level 1 (unlimited) is maintained across all recommended substitutes except BSO604NS2XUMA1 (MSL 3, 168 hours), which requires controlled storage conditions.

Frequently Asked Questions (FAQ)

Q: Can STS4DNF60L be used as a direct replacement for STS4DNF60?

A: Yes. The STS4DNF60L is the active product successor within the same manufacturer series. Both devices share identical voltage rating (60V), current rating (4A), package (8-SOIC), and operating temperature range (-55°C to 150°C). The STS4DNF60L features improved on-resistance (55 mOhm versus 90 mOhm), resulting in lower power dissipation. No circuit modifications are required.

Q: What is the primary difference between STS4DNF60 and IRF7341TRPBF?

A: The IRF7341TRPBF operates at 55V (versus 60V) with higher continuous drain current (4.7A versus 4A) and significantly lower on-resistance (50 mOhm versus 90 mOhm at rated conditions). The 5V voltage rating reduction requires verification that the application circuit does not expose the device to voltages exceeding 55V. The improved current capacity and lower on-resistance provide enhanced performance margin.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance status, ensuring regulatory compatibility with current environmental standards.

Q: What is the significance of Moisture Sensitivity Level (MSL) differences?

A: MSL 1 (unlimited) indicates the device can be stored indefinitely without moisture absorption concerns. MSL 3 (168 hours) requires controlled storage conditions and limits shelf life to 168 hours after moisture barrier bag opening. All recommended substitutes maintain MSL 1 except BSO604NS2XUMA1, which requires MSL 3 handling procedures.

Q: Can FDS9945 be used in applications requiring 4A continuous drain current?

A: FDS9945 is rated for 3.5A continuous drain current at 25°C, which is 0.5A below the original STS4DNF60 specification. Use of FDS9945 in applications requiring sustained 4A operation introduces current margin reduction. Thermal analysis is required to verify that actual operating current remains within device limits.

Q: What is the impact of gate threshold voltage (Vgs(th)) variation on circuit compatibility?

A: Gate threshold voltage ranges from 1V (IRF7341TRPBF) to 4V (STS4DNF60, IRF7380TRPBF). Logic level gate drive circuits must provide gate voltage sufficient to exceed the device Vgs(th) and achieve specified on-resistance. Verification of gate drive voltage compatibility is required when selecting substitute parts with significantly different Vgs(th) values.

Q: Is HUFA76407DK8T-F085 suitable for non-automotive applications?

A: Yes. HUFA76407DK8T-F085 includes AEC-Q101 automotive qualification, which exceeds standard industrial reliability requirements. The device is suitable for any application requiring the specified electrical characteristics and enhanced reliability assurance.

Q: What package considerations apply to these substitute parts?

A: All substitute parts use the 8-SOIC surface mount package (0.154", 3.90mm width), enabling direct PCB layout compatibility without redesign. Solder reflow profiles and thermal management considerations remain unchanged from the original STS4DNF60 design.

Q: Can IRF7380TRPBF be used in circuits designed for 60V operation?

A: Yes. IRF7380TRPBF is rated for 80V drain-to-source voltage, providing 20V additional voltage margin. The device operates safely in 60V circuits. The higher voltage rating does not introduce compatibility issues; however, the reduced continuous drain current (3.6A versus 4A) requires verification that application current requirements are met.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message