STS4DNF30L MOSFET Equivalent & Substitute Parts

Part Overview

The STS4DNF30L is a dual N-channel MOSFET array manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 4A continuous drain current in an 8-SOIC surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements. Alternative parts must maintain functional compatibility across voltage, current, and thermal specifications while accommodating the 8-SOIC package standard.

Substiute Parts

STS4DNF30L

STMicroelectronicsIn Stock: 15467STS4DNF30L Datasheet

Current PartRFQ

NTMD4N03R2G

onsemiIn Stock: 15535NTMD4N03R2G Datasheet

DirectRFQ

FDS6930B

onsemiIn Stock: 60223FDS6930B Datasheet

SimilarRFQ

ZXMN3A06DN8TA

Diodes IncorporatedIn Stock: 32967ZXMN3A06DN8TA Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STS4DNF30L is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): 30V minimum
• Configuration: Dual N-Channel (2 N-Channel)
• Package: 8-SOIC surface mount
• Operating Temperature Range: -55°C to 150°C
• Logic Level Gate feature
• RoHS3 Compliance and MSL Level 1

Performance Parameters Affecting Substitution:

• Continuous Drain Current (Id): 4A or greater
• On-Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Affects gate drive requirements

Substitute parts are classified as Direct when all mandatory criteria are met with equivalent or superior electrical performance. Similar substitutes meet mandatory criteria but may exhibit variations in secondary electrical parameters that require circuit-level evaluation.

Parameter Comparison

Engineering Selection Recommendations

NTMD4N03R2G (onsemi) — Direct Substitute

The NTMD4N03R2G is classified as a direct substitute for the STS4DNF30L. Both devices share identical voltage and current ratings (30V, 4A), dual N-channel configuration, 8-SOIC packaging, and logic level gate operation. The NTMD4N03R2G maintains active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and MSL Level 1 certification align with the original part specifications. The higher gate threshold voltage (3V vs. 1V) and increased gate charge (16nC vs. 9nC) represent measurable parameter variations that may affect gate drive circuit design but do not preclude functional substitution in applications where the original gate drive architecture accommodates these tolerances.

FDS6930B (onsemi) — Similar Substitute with Enhanced Performance

The FDS6930B qualifies as a similar substitute offering superior electrical performance characteristics. The device provides higher continuous drain current (5.5A vs. 4A) and lower on-resistance (38mOhm vs. 50mOhm), resulting in reduced power dissipation and improved thermal performance. Gate charge is significantly lower (3.8nC vs. 9nC), enabling faster switching operation. However, the FDS6930B carries Last Time Buy status, indicating limited future availability. The reduced maximum power rating (900mW vs. 2W) requires thermal evaluation in applications approaching the original part's power dissipation limits.

ZXMN3A06DN8TA (Diodes Incorporated) — Similar Substitute with Performance Trade-offs

The ZXMN3A06DN8TA provides functional substitution with higher continuous drain current (4.9A vs. 4A) and superior on-resistance (35mOhm vs. 50mOhm). Gate threshold voltage matches the original specification (1V), supporting direct gate drive compatibility. The device maintains active product status and full RoHS3/MSL compliance. Increased input capacitance (796pF vs. 330pF) and higher gate charge (17.5nC vs. 9nC) represent design considerations for gate drive circuit optimization. The reduced maximum power rating (1.8W vs. 2W) requires verification in high-dissipation applications.

Frequently Asked Questions (FAQ)

Q: Can the NTMD4N03R2G directly replace the STS4DNF30L without circuit modifications?

A: The NTMD4N03R2G maintains electrical and mechanical compatibility with the STS4DNF30L across all mandatory parameters. However, the higher gate threshold voltage (3V vs. 1V) and increased gate charge (16nC vs. 9nC) may require gate drive circuit evaluation to ensure adequate drive voltage and current margins. Existing gate drive designs operating within standard logic level specifications will accommodate this substitute without modification.

Q: What is the primary advantage of the FDS6930B over the STS4DNF30L?

A: The FDS6930B delivers superior on-resistance (38mOhm vs. 50mOhm) and significantly lower gate charge (3.8nC vs. 9nC), reducing conduction losses and enabling faster switching transitions. These characteristics result in lower power dissipation and improved thermal performance. The trade-off is reduced maximum power rating (900mW vs. 2W) and Last Time Buy status, limiting long-term procurement viability.

Q: Are all substitute parts available in the same 8-SOIC package?

A: Yes. All substitute parts—NTMD4N03R2G, FDS6930B, and ZXMN3A06DN8TA—are packaged in 8-SOIC (0.154", 3.90mm width) surface mount configuration, ensuring mechanical and footprint compatibility with the original STS4DNF30L design.

Q: Which substitute part offers the best long-term supply chain stability?

A: The NTMD4N03R2G and ZXMN3A06DN8TA both maintain active product status, providing superior long-term availability compared to the obsolete STS4DNF30L and the Last Time Buy FDS6930B. For new designs requiring extended production lifecycles, the NTMD4N03R2G or ZXMN3A06DN8TA are preferred selections.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The STS4DNF30L requires 9nC, while the FDS6930B requires only 3.8nC and the ZXMN3A06DN8TA requires 17.5nC. Lower gate charge reduces switching losses and enables faster switching frequencies. Higher gate charge increases gate drive power requirements and may limit maximum switching frequency in high-frequency applications.

Q: What is the significance of input capacitance (Ciss) variations among substitute parts?

A: Input capacitance affects gate drive circuit impedance and switching speed. The STS4DNF30L specifies 330pF at 25V. The ZXMN3A06DN8TA exhibits significantly higher input capacitance (796pF at 25V), requiring greater gate drive current to achieve equivalent switching speeds. The FDS6930B (412pF at 15V) and NTMD4N03R2G (400pF at 20V) present moderate variations requiring gate drive circuit verification.

Q: Are all substitute parts RoHS3 compliant and MSL Level 1?

A: Yes. All substitute parts—NTMD4N03R2G, FDS6930B, and ZXMN3A06DN8TA—are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original STS4DNF30L specifications and supporting equivalent environmental and reliability requirements.

Q: Can the ZXMN3A06DN8TA be used in applications requiring the full 2W power dissipation of the STS4DNF30L?

A: The ZXMN3A06DN8TA is rated for 1.8W maximum power dissipation, compared to the STS4DNF30L's 2W rating. Applications requiring sustained operation near 2W dissipation require thermal analysis to confirm the substitute part's thermal performance under the specific operating conditions. The lower on-resistance (35mOhm vs. 50mOhm) may partially offset the reduced power rating through reduced conduction losses.