STS3P6F6 Equivalent & Substitute Parts

Part Overview

The STS3P6F6 is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage with 3A continuous drain current. This device is packaged in 8-SOIC surface mount configuration and is part of the DeepGATE™ and STripFET™ VI series. The STS3P6F6 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, production continuity, and system maintenance. Equivalent parts must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package form factors.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	3	A
Rds On (Max) @ 10V	160	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	6.4	nC
Power Dissipation (Max)	2.7	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STS3P6F6 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 3A at 25°C
FET Type: Must be P-Channel
Technology: Must be MOSFET (Metal Oxide)
Package Type: Must be 8-SOIC or equivalent surface mount 8-pin configuration
Operating Temperature Range: Must encompass -55°C to 150°C minimum
RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Operating range must be compatible with existing gate drive circuits
On-Resistance (Rds On): Lower values indicate improved performance; values at or below 160mOhm @ 10V are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values at or below 6.4nC @ 10V are preferred
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped based on their ability to meet or exceed these parameters while maintaining form factor compatibility and regulatory compliance.

Parameter Comparison

Parameter	STS3P6F6 (Main)	NDS9407	AO4441	TSM9409CS RLG	HAF1010RJ-EL-E
Manufacturer	STMicroelectronics	onsemi	Alpha & Omega Semiconductor Inc.	Taiwan Semiconductor Corporation	Renesas Electronics Corporation
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	60	60	60	60	Not Specified
Id @ 25°C (A)	3	3	4	3.5	5
Rds On (Max) @ 10V (mOhm)	160 @ 1.5A	150 @ 3A	100 @ 4A	155 @ 3.5A	200 (Typ)
Vgs(th) @ 250µA (V)	4	3	3	1	Not Specified
Gate Charge @ 10V (nC)	6.4	22	20	6	Not Specified
Power Dissipation (Max) (W)	2.7	2.5	3.1	3	Not Specified
Operating Temperature (°C)	-55 to 150	-55 to 175	-55 to 150	-55 to 150	Up to 150
Package Type	8-SOIC	8-SOIC	8-SOIC	8-SOP	8-SOP
Product Status	Obsolete	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)	1 (Unlimited)

Engineering Selection Recommendations

NDS9407 (onsemi)

The NDS9407 is an active product that meets all primary substitution criteria. It maintains 60V Vdss and 3A continuous drain current ratings identical to the STS3P6F6. The device features lower on-resistance (150mOhm @ 3A, 10V) compared to the main part, resulting in reduced power dissipation and improved thermal performance. Operating temperature range extends to 175°C, exceeding the STS3P6F6 specification. The 8-SOIC package provides direct mechanical compatibility. RoHS3 compliance and MSL 1 rating support manufacturing and long-term storage requirements. This part is recommended as the primary substitute for direct replacement applications.

AO4441 (Alpha & Omega Semiconductor Inc.)

The AO4441 is an active product offering enhanced current handling at 4A continuous drain current, exceeding the 3A requirement. The 60V Vdss rating maintains voltage compatibility. On-resistance is significantly lower at 100mOhm @ 4A, 10V, providing superior thermal efficiency. The 8-SOIC package ensures mechanical compatibility. RoHS3 compliance and MSL 1 rating provide manufacturing advantages. Higher gate charge (20nC @ 10V) and input capacitance (1120pF @ 30V) may require gate drive circuit evaluation in high-frequency switching applications. This part is suitable for applications requiring higher current margins and improved efficiency.

TSM9409CS RLG (Taiwan Semiconductor Corporation)

The TSM9409CS RLG meets primary substitution criteria with 60V Vdss and 3.5A continuous drain current. On-resistance of 155mOhm @ 3.5A, 10V is comparable to the main part. Gate charge is lower at 6nC @ 10V, supporting lower switching losses. The device is classified as "Not For New Designs," indicating limited long-term availability and support. The 8-SOP package is mechanically compatible with 8-SOIC footprints in most applications. RoHS3 compliance is maintained. This part is suitable for legacy system maintenance where design changes are not feasible, but should not be selected for new development.

HAF1010RJ-EL-E (Renesas Electronics Corporation)

The HAF1010RJ-EL-E is classified as a Power Management (PMIC) device with integrated power switch/driver functionality, distinct from discrete MOSFET operation. While it provides P-Channel output with 5A current capability and 8-SOP packaging, the device architecture includes current limiting and over-temperature protection features not present in the STS3P6F6. Vdss specification is not provided in available data. This part is suitable only for applications where integrated protection and driver functionality are required and where the device's specific feature set aligns with system requirements. Direct substitution without circuit redesign is not recommended.

Frequently Asked Questions (FAQ)

Q: Can the NDS9407 be used as a direct replacement for the STS3P6F6 without circuit modifications?

A: Yes. The NDS9407 maintains identical voltage and current ratings (60V, 3A) and uses the same 8-SOIC package. Lower on-resistance (150mOhm vs. 160mOhm) improves performance without requiring circuit changes. Gate threshold voltage (3V vs. 4V) is within typical gate drive circuit tolerances.

Q: What is the difference between 8-SOIC and 8-SOP packages, and are they interchangeable?

A: Both 8-SOIC and 8-SOP are 8-pin surface mount packages with 0.154" (3.90mm) width and identical pin pitch. They are mechanically and electrically interchangeable on standard PCB layouts. Pin assignments and functional compatibility must be verified for specific applications.

Q: Why is the AO4441 rated for 4A when the STS3P6F6 is only 3A?

A: The AO4441 is designed with improved thermal characteristics and lower on-resistance, allowing higher continuous current handling. In applications requiring only 3A, the AO4441 provides additional design margin and improved efficiency. Thermal management and PCB layout remain critical design considerations.

Q: Is the TSM9409CS RLG suitable for new product designs?

A: No. The TSM9409CS RLG is classified as "Not For New Designs," indicating that the manufacturer does not recommend this part for new development. It is suitable only for maintaining existing products or legacy system support where design changes are not feasible.

Q: What does "Not For New Designs" mean for product lifecycle?

A: "Not For New Designs" indicates that the manufacturer has discontinued active development and marketing support for the part. While the part may remain available in inventory, long-term availability is not guaranteed. New designs should select active products with confirmed long-term support.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The STS3P6F6 (6.4nC) and TSM9409CS RLG (6nC) have similar gate charge, while NDS9407 (22nC) and AO4441 (20nC) require more gate drive energy. Gate drive circuit design must accommodate the specific gate charge of the selected part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain ROHS3 Compliant status, ensuring compatibility with environmental and regulatory requirements equivalent to the STS3P6F6.

Q: What is the significance of MSL (Moisture Sensitivity Level) ratings?

A: MSL rating indicates the maximum time a component can be exposed to ambient conditions (typically 30°C, 85% relative humidity) before requiring baking prior to soldering. MSL 1 (Unlimited) parts have no time restrictions. MSL 3 (168 Hours) parts must be baked if storage time exceeds 168 hours. NDS9407 and AO4441 offer MSL 1 advantages for manufacturing flexibility.

Q: Can the HAF1010RJ-EL-E replace the STS3P6F6 in all applications?

A: No. The HAF1010RJ-EL-E is a power switch/driver with integrated protection features, not a discrete MOSFET. It is suitable only for applications where integrated current limiting and over-temperature protection are required and where the device's specific output voltage range (-3.5V to -12V) matches system requirements.

Q: What parameters should be verified when selecting a substitute part?

A: Verify Vdss (drain-to-source voltage), Id (continuous drain current), Rds On (on-resistance), Vgs(th) (gate threshold voltage), operating temperature range, package type, and product status. Confirm that gate drive circuits are compatible with the selected part's gate charge and threshold voltage specifications.

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