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STS3DPF60L Equivalent & Substitute Parts
Part Overview
The STS3DPF60L is a dual P-channel MOSFET array manufactured by STMicroelectronics, rated for 60V drain-to-source voltage and 3A continuous drain current. This device is part of the STripFET™ series and is packaged in an 8-SOIC surface mount configuration. The product status is obsolete, making equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 3 | A |
| On-Resistance (Rds On) @ Id, Vgs | 120 mOhm @ 1.5A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 1.5 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 15.7 | nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 630 | pF @ 25V |
| Maximum Power Dissipation | 2 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Configuration | 2 P-Channel (Dual) | — |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the STS3DPF60L is determined by the following critical parameters:
Primary Substitution Criteria:
- Dual P-channel MOSFET configuration in 8-SOIC surface mount package
- Drain-to-source voltage rating of 60V or higher
- Continuous drain current capability of 3A or greater
- Logic level gate operation
- Operating temperature range spanning -55°C to 150°C or higher
- RoHS3 compliance and MSL 1 rating
Secondary Compatibility Factors:
- On-resistance (Rds On) characteristics at specified gate and drain conditions
- Gate charge and input capacitance values
- Maximum power dissipation capability
- Product status (active preferred for long-term availability)
The substitute parts listed below meet these criteria within the electrical and mechanical constraints of the original device. Substitutes are grouped by their alignment with the primary parameters, with variations in secondary characteristics noted in the parameter comparison table.
Parameter Comparison
| Parameter | STS3DPF60L (Main) | IRF7342TRPBF | SI4948BEY-T1-E3 | SI4948BEY-T1-GE3 | ZXMP6A16DN8TA | ZXMP6A16DN8TC | ZXMP6A17DN8TA |
|---|---|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Status | Obsolete | Active | Active | Active | Active | Active | Active |
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Vdss (V) | 60 | 55 | 60 | 60 | 60 | 60 | 60 |
| Id @ 25°C (A) | 3 | 3.4 | 2.4 | 2.4 | 3.9 (Ta) | 2.9 | 2.7 |
| Rds On (mOhm) | 120 @ 1.5A, 10V | 105 @ 3.4A, 10V | 120 @ 3.1A, 10V | 120 @ 3.1A, 10V | 85 @ 2.9A, 10V | 85 @ 2.9A, 10V | 125 @ 2.3A, 10V |
| Vgs(th) (V) | 1.5 @ 250µA | 1 @ 250µA | 3 @ 250µA | 3 @ 250µA | 1 @ 250µA | 1 @ 250µA (Min) | 1 @ 250µA (Min) |
| Qg (nC) | 15.7 @ 4.5V | 38 @ 10V | 22 @ 10V | 22 @ 10V | 12.1 @ 5V | 24.2 @ 10V | 17.7 @ 10V |
| Ciss (pF) | 630 @ 25V | 690 @ 25V | — (Not specified) | — (Not specified) | 1021 @ 30V | 1021 @ 30V | 637 @ 30V |
| Power Max (W) | 2 | 2 | 1.4 | 1.4 | 2.15 | 1.25 | 1.81 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package / Case | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | Vendor Undefined | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
Primary Substitutes (Highest Compatibility):
The ZXMP6A16DN8TA and ZXMP6A17DN8TA from Diodes Incorporated are the preferred substitutes. Both devices maintain the 60V Vdss rating, dual P-channel configuration, and 8-SOIC package. The ZXMP6A16DN8TA provides superior current handling at 3.9A (Ta) with lower on-resistance (85 mOhm), while the ZXMP6A17DN8TA delivers 2.7A with comparable gate charge characteristics. Both are active products with full RoHS3 compliance and REACH unaffected status, ensuring long-term availability and regulatory compliance.
Secondary Substitutes (Conditional Compatibility):
The SI4948BEY-T1-E3 and SI4948BEY-T1-GE3 from Vishay Siliconix are functionally equivalent with identical 60V Vdss and 8-SOIC packaging. These devices feature extended operating temperature range (-55°C to 175°C) and active product status. However, the continuous drain current is rated at 2.4A, which is lower than the original 3A specification. These substitutes are suitable for applications where the reduced current rating does not impact circuit performance.
Alternative Substitute (Voltage Trade-off):
The IRF7342TRPBF from Infineon Technologies operates at 55V Vdss, which is 5V lower than the original specification. This device provides 3.4A continuous drain current and maintains the 8-SOIC package format. The IRF7342TRPBF is suitable only for applications where the reduced voltage rating does not compromise circuit safety margins or performance specifications.
Substitutes with Power Dissipation Considerations:
The ZXMP6A16DN8TC from Diodes Incorporated is rated for 1.25W maximum power dissipation, which is lower than the original 2W specification. This device is suitable for applications with reduced thermal requirements or lower switching frequencies.
All substitute parts listed are RoHS3 compliant, MSL 1 rated, and available in active product status (except the original STS3DPF60L, which is obsolete). Selection should be based on specific application requirements for drain current, voltage rating, and thermal performance.
Frequently Asked Questions (FAQ)
Q: Can the IRF7342TRPBF be used as a direct replacement for the STS3DPF60L?
A: The IRF7342TRPBF is mechanically and functionally compatible in the 8-SOIC package and maintains dual P-channel configuration. However, the Vdss rating is 55V compared to the original 60V. This substitute is suitable only if the application circuit design includes adequate safety margins below 55V operation or if the reduced voltage rating does not violate system specifications.
Q: What is the primary difference between SI4948BEY-T1-E3 and SI4948BEY-T1-GE3?
A: Both devices are electrically identical with 60V Vdss, 2.4A continuous drain current, and 8-SOIC packaging. The primary difference is packaging format: SI4948BEY-T1-E3 is supplied in Cut Tape (CT) & Digi-Reel®, while SI4948BEY-T1-GE3 is supplied in Tape & Reel (TR). Selection depends on procurement and assembly requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes, all substitute parts listed are RoHS3 compliant. The original STS3DPF60L is also RoHS3 compliant. All devices maintain MSL 1 (Unlimited) moisture sensitivity rating.
Q: Which substitute provides the best on-resistance performance?
A: The ZXMP6A16DN8TA and ZXMP6A16DN8TC from Diodes Incorporated both feature 85 mOhm on-resistance at specified conditions, which is lower than the original 120 mOhm specification. This results in reduced power dissipation and improved thermal performance in switching applications.
Q: Can substitutes with lower continuous drain current ratings be used?
A: Substitutes with lower Id ratings (such as SI4948BEY-T1-E3 at 2.4A or ZXMP6A17DN8TA at 2.7A) can be used if the application circuit does not require the full 3A continuous drain current. Circuit analysis must confirm that the reduced current rating does not cause thermal stress or performance degradation under worst-case operating conditions.
Q: What is the significance of the extended operating temperature range in SI4948 devices?
A: The SI4948BEY-T1-E3 and SI4948BEY-T1-GE3 are rated for -55°C to 175°C junction temperature, compared to -55°C to 150°C for the original STS3DPF60L. This extended range provides additional thermal margin in high-temperature applications but does not affect substitution suitability for standard temperature range designs.
Q: Are Diodes Incorporated ZXMP6A series devices automotive qualified?
A: The ZXMP6A16DN8TA is qualified to AEC-Q101 automotive standard and carries an automotive grade designation. This qualification is relevant for applications requiring automotive-grade component certification. The ZXMP6A16DN8TC and ZXMP6A17DN8TA do not carry automotive qualification designations.
Q: What packaging options are available for substitute parts?
A: All substitute parts are supplied in surface mount 8-SOIC (0.154", 3.90mm width) package, matching the original STS3DPF60L. Packaging formats vary by supplier: Diodes Incorporated and Infineon supply in Tape & Reel (TR), while Vishay offers both Cut Tape (CT) & Digi-Reel® and Tape & Reel (TR) options.
Q: Is the REACH status important for part selection?
A: REACH status indicates regulatory compliance for chemical substance restrictions in the European Union. All substitute parts are either REACH Unaffected or Vendor Undefined, which does not restrict their use. The SI4948BEY-T1-GE3 carries Vendor Undefined status, which should be clarified with the supplier for applications requiring explicit REACH compliance documentation.
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