STS2DNF30L Equivalent & Substitute Parts

Part Overview

The STS2DNF30L is a dual N-channel MOSFET array manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 3A continuous drain current in an 8-SOIC surface mount package. This device is part of the STripFET™ series and is classified as "Not For New Designs," indicating that STMicroelectronics has discontinued active development and support for this product line. Finding equivalent or substitute components is necessary for ongoing production, maintenance, and new system designs that require comparable electrical and mechanical characteristics.

Substiute Parts

STS2DNF30L
STMicroelectronicsIn Stock: 29972STS2DNF30L Datasheet
STS2DNF30L
Current Part
NTMD4N03R2G
onsemiIn Stock: 15535NTMD4N03R2G Datasheet
NTMD4N03R2G
Direct
IRF7907TRPBF
Infineon TechnologiesIn Stock: 47917IRF7907TRPBF Datasheet
IRF7907TRPBF
Similar
IRF9956TRPBF
Infineon TechnologiesIn Stock: 4733IRF9956TRPBF Datasheet
IRF9956TRPBF
Similar

Key Parameters

Parameter Value Specification
Drain-to-Source Voltage (Vdss) 30V Maximum rated voltage
Continuous Drain Current (Id) @ 25°C 3A Maximum continuous current
On-State Resistance (Rds On) 110mOhm @ 1A, 10V Maximum static resistance
Gate Threshold Voltage (Vgs(th)) 2.5V @ 250µA Logic level gate
Configuration 2 N-Channel (Dual) Dual MOSFET array
Package Type 8-SOIC 0.154" width, 3.90mm
Operating Temperature Range -55°C to 150°C (TJ) Junction temperature
Power Dissipation 2W Maximum power
RoHS Compliance ROHS3 Compliant Environmental standard
Moisture Sensitivity Level MSL 1 Unlimited shelf life

Substitute Part Grouping Explanation

Substitution of the STS2DNF30L is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • Configuration: Must be dual N-channel (2 N-Channel)
  • Package Type: Must be 8-SOIC or equivalent 8-pin surface mount
  • Gate Feature: Must support logic level gate operation
  • Operating Temperature Range: Must span -55°C to 150°C minimum
  • RoHS Compliance: Must maintain ROHS3 compliance
  • Moisture Sensitivity: Must be MSL 1 or better

Performance Parameters (Allowable Variation):

  • Continuous Drain Current (Id): Substitute must meet or exceed 3A
  • On-State Resistance (Rds On): Lower values are acceptable (improved performance)
  • Gate Threshold Voltage (Vgs(th)): Must support logic level operation
  • Power Dissipation: Must support 2W minimum

The substitute parts listed below meet all critical matching parameters and provide equal or superior electrical performance characteristics.

Parameter Comparison

Parameter STS2DNF30L (Main) NTMD4N03R2G (onsemi) IRF7907TRPBF (Infineon) IRF9956TRPBF (Infineon)
Manufacturer STMicroelectronics onsemi Infineon Technologies Infineon Technologies
Vdss (V) 30 30 30 30
Id @ 25°C (A) 3 4 9.1 / 11 3.5
Rds On (mOhm) 110 @ 1A, 10V 60 @ 4A, 10V 16.4 @ 9.1A, 10V 100 @ 2.2A, 10V
Vgs(th) (V) 2.5 @ 250µA 3 @ 250µA 2.35 @ 25µA 1 @ 250µA
Configuration 2 N-Channel 2 N-Channel 2 N-Channel 2 N-Channel
Package 8-SOIC 8-SOIC 8-SO 8-SO
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150
Power Max (W) 2 2 2 2
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Not For New Designs Active Active Obsolete

Engineering Selection Recommendations

NTMD4N03R2G (onsemi) - Primary Substitute

The NTMD4N03R2G is the recommended direct substitute for new designs and ongoing production. This device maintains identical voltage and package specifications while providing superior electrical performance. The 4A continuous drain current rating exceeds the STS2DNF30L requirement, and the 60mOhm on-state resistance represents a 45% improvement over the original part. The NTMD4N03R2G carries Active product status, ensuring long-term availability and manufacturer support. All compliance certifications (ROHS3, MSL 1, REACH Unaffected) are maintained.

IRF7907TRPBF (Infineon) - High-Performance Alternative

The IRF7907TRPBF is suitable for applications requiring enhanced current handling and reduced on-state resistance. With a 9.1A/11A continuous drain current rating and 16.4mOhm on-state resistance, this device provides significant performance headroom for demanding applications. The IRF7907TRPBF is part of the HEXFET® series and maintains Active product status. Package designation is 8-SO, which is mechanically compatible with 8-SOIC footprints. All compliance requirements are satisfied.

IRF9956TRPBF (Infineon) - Legacy Compatibility

The IRF9956TRPBF provides electrical characteristics closely aligned with the STS2DNF30L, with a 3.5A continuous drain current rating and 100mOhm on-state resistance. However, this device carries Obsolete product status, indicating discontinued manufacturer support and potential supply constraints. This substitute is suitable only for legacy system maintenance or replacement applications where new inventory cannot be sourced. The 8-SO package is mechanically compatible with 8-SOIC footprints.

Frequently Asked Questions (FAQ)

Q: Can the NTMD4N03R2G be used as a direct pin-for-pin replacement for the STS2DNF30L?

A: Yes. Both devices are dual N-channel MOSFETs in 8-SOIC packages with identical pinout configurations. The NTMD4N03R2G provides superior electrical performance with higher current rating and lower on-state resistance, making it a direct functional upgrade.

Q: What is the difference between 8-SOIC and 8-SO package designations?

A: Both designations refer to 8-pin surface mount packages with 0.154" (3.90mm) width. The packages are mechanically and electrically compatible for PCB assembly purposes. Consult device datasheets for precise dimensional specifications if tight layout tolerances are critical.

Q: Why is the IRF9956TRPBF listed as Obsolete?

A: Obsolete status indicates that Infineon Technologies has discontinued active production and support for this device. While existing inventory may be available through distributors, long-term supply cannot be guaranteed. For new designs, the NTMD4N03R2G or IRF7907TRPBF are recommended.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (NTMD4N03R2G, IRF7907TRPBF, and IRF9956TRPBF) maintain ROHS3 compliance and MSL 1 moisture sensitivity ratings, ensuring compatibility with modern manufacturing and environmental standards.

Q: What is the significance of the gate threshold voltage (Vgs(th)) differences among these parts?

A: Gate threshold voltage determines the gate-source voltage required to turn the MOSFET on. All listed substitutes support logic level gate operation (Vgs(th) below 3V), ensuring compatibility with standard digital control circuits. The IRF9956TRPBF has the lowest threshold at 1V, while the NTMD4N03R2G has the highest at 3V. Circuit design must account for these variations in gate drive requirements.

Q: Can the higher current ratings of the IRF7907TRPBF cause problems in applications designed for the STS2DNF30L?

A: No. Higher current ratings indicate improved capability and do not create compatibility issues. The IRF7907TRPBF will operate safely in circuits designed for the 3A STS2DNF30L. The lower on-state resistance may reduce heat dissipation, which is beneficial for thermal management.

Q: What compliance certifications should I verify before selecting a substitute?

A: All listed substitutes maintain ROHS3 compliance, REACH Unaffected status, and MSL 1 moisture sensitivity ratings. These certifications ensure compatibility with current manufacturing standards and environmental regulations. Verify that your specific application requirements do not mandate additional certifications beyond those listed.

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