STS26N3LLH6 N-Channel MOSFET 30V 26A Equivalent & Substitute Parts

Part Overview

The STS26N3LLH6 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 26A continuous drain current at 25°C. This device is part of the DeepGATE™ and STripFET™ VI series and is packaged in an 8-SOIC surface mount configuration. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	26	A (Tc)
On-State Resistance (Rds On) @ 13A, 10V	4.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 4.5V	40	nC
Input Capacitance (Ciss) @ 25V	4040	pF
Power Dissipation (Max)	2.7	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STS26N3LLH6 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must meet or exceed 26A at 25°C
Package Type: Must be 8-SOIC surface mount configuration
Operating Temperature Range: Must support -55°C to 150°C
RoHS Compliance: Must maintain ROHS3 compliance

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
Gate Charge (Qg): Affects switching speed and drive requirements
Input Capacitance (Ciss): Influences gate drive circuit design

Substitute parts are grouped into two categories:

Category A - Direct Replacements (Id ≥ 26A): Parts meeting or exceeding the 26A continuous drain current specification with equivalent or superior electrical characteristics.

Category B - Functional Alternatives (Id < 26A): Parts with reduced current ratings but compatible voltage, package, and temperature specifications. These are suitable for applications where the full 26A capability is not required.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Package	Status
STS26N3LLH6	STMicroelectronics	30	26 (Tc)	4.4 @ 13A, 10V	1 @ 250µA	40 @ 4.5V	4040 @ 25V	8-SOIC	Obsolete
SI4166DY-T1-GE3	Vishay Siliconix	30	30.5 (Tc)	3.9 @ 15A, 10V	2.4 @ 250µA	65 @ 10V	2730 @ 15V	8-SOIC	Active
SI4634DY-T1-GE3	Vishay Siliconix	30	24.5 (Tc)	5.2 @ 15A, 10V	2.6 @ 250µA	68 @ 10V	3150 @ 15V	8-SOIC	Active
SI4634DY-T1-E3	Vishay Siliconix	30	24.5 (Tc)	5.2 @ 15A, 10V	2.6 @ 250µA	68 @ 10V	3150 @ 15V	8-SOIC	Active
IRF7832TRPBF	Infineon Technologies	30	20 (Ta)	4 @ 20A, 10V	2.32 @ 250µA	51 @ 4.5V	4310 @ 15V	8-SOIC	Active
IRF8736TRPBF	Infineon Technologies	30	18 (Ta)	4.8 @ 18A, 10V	2.35 @ 50µA	26 @ 4.5V	2315 @ 15V	8-SOIC	Active
FDS8870	onsemi	30	18 (Ta)	4.2 @ 18A, 10V	2.5 @ 250µA	112 @ 10V	4615 @ 15V	8-SOIC	Active
AO4430	Alpha & Omega Semiconductor	30	18 (Ta)	5.5 @ 18A, 10V	2.5 @ 250µA	124 @ 10V	7270 @ 15V	8-SOIC	Not For New Designs
BSO040N03MSGXUMA1	Infineon Technologies	30	16 (Ta)	4 @ 20A, 10V	2 @ 250µA	73 @ 10V	5700 @ 15V	8-SOIC	Not For New Designs
IRF8113TRPBF	Infineon Technologies	30	17.2 (Ta)	5.6 @ 17.2A, 10V	2.2 @ 250µA	36 @ 4.5V	2910 @ 15V	8-SOIC	Not For New Designs
NTMS4802NR2G	onsemi	30	11.1 (Ta)	4 @ 18A, 10V	2.5 @ 250µA	36 @ 4.5V	5300 @ 25V	8-SOIC	Obsolete

Engineering Selection Recommendations

Category A - Direct Replacements (Recommended for New Designs):

SI4166DY-T1-GE3 (Vishay Siliconix, Active Status)

Exceeds the 26A continuous drain current requirement with 30.5A rating
Maintains 30V Vdss specification
Offers superior on-state resistance (3.9 mOhm) compared to the original part
ROHS3 compliant with unlimited moisture sensitivity level
Active product status ensures long-term availability and supply chain stability

SI4634DY-T1-GE3 (Vishay Siliconix, Active Status)

Rated for 24.5A continuous drain current, approaching the original 26A specification
Maintains 30V Vdss specification
ROHS3 compliant with unlimited moisture sensitivity level
Active product status ensures continued support
Suitable for applications where the full 26A capability is not critical

Category B - Functional Alternatives (Active Status, Reduced Current Rating):

IRF7832TRPBF (Infineon Technologies, Active Status)

Rated for 20A continuous drain current
Maintains 30V Vdss specification
Superior gate charge characteristics (51 nC) enable faster switching
ROHS3 compliant with unlimited moisture sensitivity level
Active product status with high inventory availability (37,300 units)
Suitable for applications requiring 20A or less

IRF8736TRPBF (Infineon Technologies, Active Status)

Rated for 18A continuous drain current
Maintains 30V Vdss specification
Excellent gate charge performance (26 nC) for high-speed switching applications
ROHS3 compliant with unlimited moisture sensitivity level
Active product status with highest inventory availability (503,400 units)
Suitable for applications requiring 18A or less

FDS8870 (onsemi, Active Status)

Rated for 18A continuous drain current
Maintains 30V Vdss specification
PowerTrench® technology provides optimized on-state resistance (4.2 mOhm)
ROHS3 compliant with unlimited moisture sensitivity level
Active product status ensures supply continuity

Not Recommended for New Designs:

AO4430 (Alpha & Omega Semiconductor, Not For New Designs)

Product status designation restricts use in new design implementations
Rated for 18A continuous drain current

BSO040N03MSGXUMA1 (Infineon Technologies, Not For New Designs)

Product status designation restricts use in new design implementations
Rated for 16A continuous drain current

IRF8113TRPBF (Infineon Technologies, Not For New Designs)

Product status designation restricts use in new design implementations
Rated for 17.2A continuous drain current

Obsolete Parts (Not Recommended):

NTMS4802NR2G (onsemi, Obsolete)

Obsolete status limits availability and future support
Rated for only 11.1A continuous drain current

Frequently Asked Questions (FAQ)

Q: Can SI4634DY-T1-GE3 directly replace STS26N3LLH6 in all applications?

A: SI4634DY-T1-GE3 is suitable for applications where the continuous drain current requirement does not exceed 24.5A. The original STS26N3LLH6 is rated for 26A, so applications requiring the full 26A capability should use SI4166DY-T1-GE3 instead. Both parts maintain the 30V Vdss specification and 8-SOIC package compatibility.

Q: What is the difference between SI4634DY-T1-GE3 and SI4634DY-T1-E3?

A: Both parts are electrically identical with the same electrical specifications. The difference lies in packaging: SI4634DY-T1-GE3 is supplied in Tape & Reel format, while SI4634DY-T1-E3 is supplied in Cut Tape format. Selection depends on procurement and assembly requirements.

Q: Why is IRF8736TRPBF recommended despite its lower 18A rating?

A: IRF8736TRPBF is recommended for applications requiring 18A or less due to its active product status, superior gate charge characteristics (26 nC), and exceptional inventory availability (503,400 units). These factors ensure long-term supply chain stability and optimal switching performance for lower-current applications.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitute parts are ROHS3 compliant. This ensures compatibility with environmental and regulatory requirements equivalent to the original STS26N3LLH6.

Q: What is the significance of the 8-SOIC package compatibility?

A: All substitute parts listed maintain the 8-SOIC (0.154", 3.90mm Width) surface mount package specification. This ensures mechanical and electrical compatibility with existing PCB layouts and assembly processes without requiring board redesign.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET. Lower gate charge values (such as IRF8736TRPBF at 26 nC) enable faster switching and reduce gate drive circuit power consumption. Higher gate charge values (such as AO4430 at 124 nC) require more robust gate drive circuits but may offer other performance benefits.

Q: Can parts with "Not For New Designs" status be used in existing production?

A: Parts designated "Not For New Designs" should not be used in new design implementations. However, they may be acceptable for sustaining production of existing designs, subject to supply availability and engineering review.

Q: What is the impact of on-state resistance (Rds On) variation?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce heat generation during operation. SI4166DY-T1-GE3 offers 3.9 mOhm compared to the original 4.4 mOhm, resulting in improved efficiency and reduced thermal management requirements.

Q: Are there any REACH compliance differences among substitute parts?

A: SI4166DY-T1-GE3 is listed as REACH Affected, while all other substitute parts are REACH Unaffected. This distinction may be relevant for applications subject to REACH regulatory requirements. Consult regulatory documentation for specific application requirements.

Q: What is the operating temperature range compatibility?

A: All substitute parts support the -55°C to 150°C operating temperature range, with IRF7832TRPBF extending to 155°C. This ensures thermal compatibility across all recommended alternatives.

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