STS25NH3LL-E N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STS25NH3LL-E is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 25A continuous drain current. This device is part of the STripFET™ III series and is packaged in an 8-SOIC surface mount configuration. The product status is listed as Obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Substiute Parts

STS25NH3LL-E

STMicroelectronicsIn Stock: 1017STS25NH3LL-E Datasheet

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IRF7831TRPBF

Infineon TechnologiesIn Stock: 7769IRF7831TRPBF Datasheet

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IRF7832TRPBF

Infineon TechnologiesIn Stock: 37326IRF7832TRPBF Datasheet

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IRF7862TRPBF

Infineon TechnologiesIn Stock: 22248IRF7862TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the STS25NH3LL-E is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current (Id): Must support the application's current requirements
• On-State Resistance (Rds On): Lower values indicate better performance; substitutes with comparable or lower Rds On are acceptable
• Gate Charge (Qg): Affects switching speed and drive requirements
• Operating Temperature Range: Must encompass the application's thermal requirements

Mechanical Compatibility Criteria:

• Package Type: 8-SOIC surface mount configuration required
• Mounting Type: Surface mount compatibility mandatory
• Physical Dimensions: 0.154" width (3.90mm) standard for 8-SOIC

Compliance Requirements:

• RoHS3 Compliance: All substitutes must maintain regulatory compliance
• Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred for handling flexibility

The substitute parts identified (IRF7831TRPBF, IRF7832TRPBF, IRF7862TRPBF) share the same Vdss rating of 30V, identical package configuration, and surface mount technology. Drain current ratings range from 20A to 21A, which represents a reduction from the original 25A specification but remains suitable for applications not requiring the full original current capacity.

Parameter Comparison

Engineering Selection Recommendations

IRF7832TRPBF (Primary Substitute)

The IRF7832TRPBF is the recommended primary substitute for the STS25NH3LL-E. This device carries an Active product status, ensuring long-term availability and supply chain stability. It maintains the identical 30V Vdss rating and 8-SOIC package configuration. The continuous drain current of 20A represents a 20% reduction from the original specification; however, this device is suitable for applications operating at or below 20A. The Rds On of 4.0 mOhm at 20A, 10V is comparable to the original part's performance characteristics. The maximum gate charge of 51 nC falls between the original 40 nC and the higher values of alternative substitutes, providing balanced switching performance. The ±20V Vgs rating exceeds the original ±18V specification, offering improved gate drive flexibility. RoHS3 compliance and MSL Level 1 rating maintain regulatory and handling compatibility.

IRF7862TRPBF (Secondary Substitute)

The IRF7862TRPBF serves as a secondary substitute option with Active product status. This device matches the 30V Vdss and 8-SOIC package requirements. The 21A continuous drain current provides slightly higher capacity than the IRF7832TRPBF while remaining below the original 25A rating. The Rds On of 3.7 mOhm at 20A, 10V represents the lowest on-state resistance among the substitutes, indicating superior efficiency characteristics. The gate charge of 45 nC is the lowest among all alternatives, supporting faster switching transitions. The ±20V Vgs rating and RoHS3 compliance align with modern design requirements. Packaging is specified as Tape & Reel (TR), which may differ from the original Cut Tape (CT) format.

IRF7831TRPBF (Legacy Substitute)

The IRF7831TRPBF carries a Not For New Designs product status and is not recommended for new circuit implementations. This device is listed for reference only in applications requiring compatibility with existing inventory or legacy designs. The 21A continuous drain current and 3.6 mOhm Rds On provide acceptable electrical characteristics, but the restricted product status limits its applicability for forward-looking designs.

Frequently Asked Questions (FAQ)

Q: Can the IRF7832TRPBF directly replace the STS25NH3LL-E in all applications?

A: The IRF7832TRPBF is a direct mechanical and electrical substitute for applications operating at or below 20A continuous drain current. The identical 30V Vdss rating, 8-SOIC package, and surface mount configuration ensure PCB-level compatibility. Applications requiring the full 25A capacity of the original part require evaluation of the IRF7862TRPBF (21A) or alternative solutions.

Q: What is the significance of the product status difference between the main part and substitutes?

A: The STS25NH3LL-E is marked Obsolete, indicating discontinued production and limited availability. The IRF7832TRPBF and IRF7862TRPBF carry Active status, ensuring ongoing manufacturing and supply chain support. The IRF7831TRPBF is marked Not For New Designs, restricting its use to legacy applications only.

Q: Are there thermal performance differences between the main part and substitutes?

A: The STS25NH3LL-E specifies 3.2W maximum power dissipation at Tc (case temperature), while all three Infineon substitutes specify 2.5W at Ta (ambient temperature). The measurement conditions differ; direct thermal comparison requires application-specific thermal modeling. The operating temperature ranges differ slightly: the original part supports -55°C to 175°C, while substitutes range from -55°C to 150°C or 155°C.

Q: How do gate charge differences affect circuit design?

A: The original STS25NH3LL-E specifies 40 nC gate charge at 4.5V. The IRF7862TRPBF (45 nC) and IRF7832TRPBF (51 nC) require proportionally higher gate drive energy. The IRF7831TRPBF specifies 60 nC, the highest among alternatives. Gate drive circuits must supply sufficient charge to achieve specified switching performance; higher gate charge values may require increased driver output current or extended switching times.

Q: Is the package configuration identical across all parts?

A: All parts use the 8-SOIC package with 0.154" (3.90mm) width, ensuring identical PCB footprint and land pattern compatibility. The IRF7862TRPBF is supplied in Tape & Reel (TR) packaging, while the STS25NH3LL-E and IRF7832TRPBF are available in Cut Tape (CT) format. This packaging difference does not affect electrical or mechanical compatibility but may influence procurement and handling procedures.

Q: What are the gate voltage (Vgs) rating implications?

A: The STS25NH3LL-E specifies ±18V maximum Vgs. The IRF7832TRPBF and IRF7862TRPBF both support ±20V, providing 2V additional margin for gate drive circuits. The IRF7831TRPBF limits Vgs to ±12V, requiring verification that existing gate drive circuits do not exceed this threshold.

Q: Are all substitutes RoHS3 compliant?

A: All parts listed—the original STS25NH3LL-E and the three Infineon substitutes (IRF7831TRPBF, IRF7832TRPBF, IRF7862TRPBF)—carry RoHS3 Compliant status. Regulatory compliance is maintained across all options.