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STS25NH3LL N-Channel MOSFET 30V 25A Equivalent & Substitute Parts
Part Overview
The STS25NH3LL is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 25A continuous drain current in an 8-SOIC surface mount package. This device is part of the STripFET™ III series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across electrical ratings, package dimensions, and thermal characteristics while meeting current manufacturing and compliance standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 25 | A |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 12.5A, 10V | — |
| Gate Charge (Qg) (Max) @ Vgs | 40 | nC @ 4.5V |
| Vgs (Max) | ±18 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 4450 | pF @ 25V |
| Power Dissipation (Max) | 3.2 | W |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the STS25NH3LL is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 30V
- N-Channel MOSFET technology with Metal Oxide construction
- Operating temperature range must accommodate application requirements
- Gate charge and input capacitance characteristics affect switching performance
Mechanical Compatibility Criteria:
- Package type: 8-SOIC surface mount with 0.154" (3.90mm) width
- Pin configuration and footprint compatibility with 8-SO package designation
Compliance Requirements:
- RoHS3 compliance mandatory
- MSL rating of 1 (Unlimited) for moisture sensitivity
- REACH unaffected status
The substitute parts listed below maintain these core parameters while offering active product status and current manufacturing availability. Continuous drain current ratings range from 20A to 25A, with on-resistance characteristics suitable for applications previously served by the STS25NH3LL.
Parameter Comparison
| Parameter | STS25NH3LL (Main) | IRF7831TRPBF | IRF7832TRPBF | IRF7862TRPBF | IRF8788TRPBF |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Not For New Designs | Active | Active | Active |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 25 A (Tc) | 21 A (Ta) | 20 A (Ta) | 21 A (Ta) | 24 A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 12.5A, 10V | 3.6 mOhm @ 20A, 10V | 4 mOhm @ 20A, 10V | 3.7 mOhm @ 20A, 10V | 2.8 mOhm @ 24A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5V | 60 nC @ 4.5V | 51 nC @ 4.5V | 45 nC @ 4.5V | 66 nC @ 4.5V |
| Vgs (Max) | ±18 V | ±12 V | ±20 V | ±20 V | ±20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4450 pF @ 25V | 6240 pF @ 15V | 4310 pF @ 15V | 4090 pF @ 15V | 5720 pF @ 15V |
| Power Dissipation (Max) | 3.2 W (Tc) | 2.5 W (Ta) | 2.5 W (Ta) | 2.5 W (Ta) | 2.5 W (Ta) |
| Operating Temperature Range | -55 to 175 °C (TJ) | -55 to 150 °C (TJ) | -55 to 155 °C (TJ) | -55 to 150 °C (TJ) | -55 to 150 °C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) | 8-SOIC (0.154", 3.90mm) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
IRF7832TRPBF is the primary recommended substitute for new designs. This device carries Active product status, ensuring long-term availability and manufacturing support. It maintains the 30V Vdss rating and 8-SOIC package compatibility. The 20A continuous drain current rating is suitable for applications where the full 25A capability of the STS25NH3LL is not required. RoHS3 compliance and MSL 1 rating match the original part specifications.
IRF8788TRPBF is an alternative for applications requiring higher current capacity. With 24A continuous drain current and the lowest on-resistance specification (2.8 mOhm @ 24A, 10V), this part approaches the performance envelope of the STS25NH3LL while maintaining Active product status. The 30V Vdss rating and 8-SOIC package provide direct mechanical compatibility.
IRF7862TRPBF offers a balanced alternative with 21A continuous drain current and Active product status. Gate charge of 45 nC and input capacitance of 4090 pF @ 15V provide switching characteristics comparable to the original device. This part is available in Tape & Reel packaging, matching the original STS25NH3LL packaging format.
IRF7831TRPBF carries Not For New Designs status and is not recommended for new applications. This part is listed for reference only in cases where existing inventory or legacy system compatibility is required.
All substitute parts maintain RoHS3 compliance, MSL 1 rating, and REACH unaffected status, ensuring regulatory and environmental compliance equivalent to the original STS25NH3LL.
Frequently Asked Questions (FAQ)
Q: Can the IRF7832TRPBF directly replace the STS25NH3LL in existing designs?
A: The IRF7832TRPBF shares the same 30V Vdss rating, 8-SOIC package dimensions, and pin configuration as the STS25NH3LL. The 20A continuous drain current rating is lower than the original 25A specification. Direct replacement is possible if the application does not require the full 25A current capacity. Thermal management and circuit performance must be evaluated for the specific application.
Q: What is the difference between the IRF8788TRPBF and IRF7832TRPBF?
A: Both parts maintain 30V Vdss and 8-SOIC packaging. The IRF8788TRPBF provides 24A continuous drain current with 2.8 mOhm on-resistance, while the IRF7832TRPBF provides 20A with 4 mOhm on-resistance. The IRF8788TRPBF offers lower on-resistance and higher current capacity, resulting in reduced power dissipation in high-current applications. Gate charge is higher for the IRF8788TRPBF (66 nC versus 51 nC), affecting switching speed.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts—IRF7831TRPBF, IRF7832TRPBF, IRF7862TRPBF, and IRF8788TRPBF—carry RoHS3 compliance certification. Moisture sensitivity level is 1 (Unlimited) for all parts, matching the original STS25NH3LL specification.
Q: What is the significance of Active versus Not For New Designs product status?
A: Active status indicates the manufacturer continues production and supports the part for new designs. Not For New Designs status indicates the manufacturer no longer recommends the part for new applications, though existing inventory may be available. For new designs, IRF7832TRPBF, IRF7862TRPBF, and IRF8788TRPBF are preferred due to Active status.
Q: How do operating temperature ranges compare?
A: The STS25NH3LL operates from -55°C to 175°C (TJ). Substitute parts operate from -55°C to 150°C or 155°C (TJ). Applications requiring operation above 150°C must verify compatibility with the specific substitute part selected. IRF7832TRPBF extends to 155°C, providing the widest temperature range among substitutes.
Q: What packaging formats are available for these substitute parts?
A: IRF7831TRPBF and IRF8788TRPBF are supplied in Cut Tape (CT) & Digi-Reel® format. IRF7832TRPBF is supplied in Cut Tape (CT) & Digi-Reel® format. IRF7862TRPBF is supplied in Tape & Reel (TR) format, matching the original STS25NH3LL packaging. Packaging selection depends on production volume and assembly requirements.
Q: How do gate charge specifications affect circuit design?
A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The STS25NH3LL specifies 40 nC @ 4.5V. Substitute parts range from 45 nC to 66 nC. Higher gate charge requires more driver current and increases switching losses. Applications with tight timing requirements or high-frequency switching must account for these differences in gate driver design.
Q: Are the pin configurations identical across all parts?
A: All parts use the 8-SOIC package with 0.154" (3.90mm) width. Pin configuration for N-Channel MOSFETs in this package is standardized. PCB footprints are compatible across all listed parts. Physical layout and thermal considerations remain identical.
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