STS17NH3LL N-Channel 30V 17A MOSFET Equivalent & Substitute Parts

Part Overview

The STS17NH3LL is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 17A continuous drain current at 25°C. This device is part of the STripFET™ series and is packaged in an 8-SOIC surface mount configuration. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design requirements. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	17	A
Rds On (Max) @ 10V Vgs	5.7	mOhm
Power Dissipation (Max)	2.7	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Gate Charge (Qg) @ 4.5V Vgs	24	nC
Input Capacitance (Ciss) @ 25V Vds	1810	pF

Substitute Part Grouping Explanation

Substitute parts for the STS17NH3LL are selected based on the following critical parameters that determine functional equivalence:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must support 17A or higher at 25°C
Package Type: Must be 8-SOIC surface mount configuration
Operating Temperature Range: Must span -55°C to 150°C
Rds On (Max): Lower or equal values indicate improved performance
Power Dissipation: Must support thermal requirements of 2.7W or higher

Secondary Compatibility Factors:

Gate Charge (Qg): Affects switching speed and drive requirements
Input Capacitance (Ciss): Influences gate drive circuit design
Vgs(th) and Vgs (Max): Must be compatible with gate drive voltage levels
RoHS and REACH compliance: Ensures regulatory alignment

Substitute parts are grouped into two categories: direct replacements with equivalent or superior current ratings, and functional alternatives with slightly reduced current ratings but maintained voltage and thermal specifications.

Parameter Comparison

Parameter	STS17NH3LL	IRF8736TRPBF	IRF8113TRPBF	FDS8896	FDS6682	FDS6670A	IRF7809AVTRPBF
Manufacturer	STMicroelectronics	Infineon	Infineon	onsemi	onsemi	Fairchild	Infineon
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	17	18	17.2	15	14	13	13.3
Rds On (Max) @ 10V Vgs (mOhm)	5.7	4.8	5.6	6	7.5	8	9
Power Dissipation (Max) (W)	2.7	2.5	2.5	2.5	1	2.5	2.5
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SO	8-SO	8-SOIC	8-SOIC	8-SOIC	8-SO
Gate Charge (Qg) (nC)	24 @ 4.5V	26 @ 4.5V	36 @ 4.5V	67 @ 10V	31 @ 5V	30 @ 5V	62 @ 5V
Input Capacitance (Ciss) (pF)	1810 @ 25V	2315 @ 15V	2910 @ 15V	2525 @ 15V	2310 @ 15V	2220 @ 15V	3780 @ 16V
Vgs (Max) (V)	±16	±20	±20	±20	±20	±20	±12
Product Status	Obsolete	Active	Not For New Designs	Active	Obsolete	Active	Obsolete
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	No data	Yes

Engineering Selection Recommendations

Tier 1 - Primary Substitutes (Recommended for New Designs):

IRF8736TRPBF (Infineon HEXFET®): This part is the optimal substitute for the STS17NH3LL. It exceeds the original specification with 18A continuous drain current versus 17A, maintains 30V Vdss rating, and delivers superior Rds On performance at 4.8mOhm. The device is classified as Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and identical operating temperature range (-55°C to 150°C) provide full regulatory alignment. Gate charge of 26nC at 4.5V is comparable to the original 24nC, minimizing gate drive circuit modifications. Packaging is 8-SO, mechanically compatible with 8-SOIC footprints.

FDS8896 (onsemi PowerTrench®): This substitute provides 15A continuous drain current with 30V Vdss rating and 2.5W power dissipation. The device is Active product status with RoHS3 compliance. Rds On of 6mOhm is slightly higher than the original but remains within acceptable performance margins. The 8-SOIC package provides direct mechanical compatibility. This option is suitable for applications where the 17A current rating can be reduced to 15A without functional impact.

Tier 2 - Secondary Substitutes (For Existing Designs):

IRF8113TRPBF (Infineon HEXFET®): This part matches the original 17.2A current rating and maintains 30V Vdss. Rds On of 5.6mOhm is nearly equivalent to the original 5.7mOhm. However, product status is classified as Not For New Designs, limiting its use to legacy system maintenance. RoHS3 compliance and full temperature range compatibility are maintained. Gate charge of 36nC at 4.5V is moderately higher than the original specification.

FDS6682 (onsemi PowerTrench®): This part provides 14A continuous drain current with 30V Vdss and 1W power dissipation. Product status is Obsolete, similar to the original part. Rds On of 7.5mOhm represents a performance reduction. This option is suitable only for replacement in existing designs where current requirements can be met at 14A.

Tier 3 - Limited Substitutes (Reduced Performance):

FDS6670A (Fairchild PowerTrench®): This part provides 13A continuous drain current, representing a 24% reduction from the original 17A specification. Rds On of 8mOhm is higher than the original. Product status is Active, providing supply availability. This option is suitable only for applications with reduced current requirements.

IRF7809AVTRPBF (Infineon HEXFET®): This part provides 13.3A continuous drain current with 30V Vdss. Product status is Obsolete. Rds On of 9mOhm represents significant performance degradation. Gate charge of 62nC at 5V is substantially higher than the original 24nC, requiring gate drive circuit redesign. Vgs (Max) of ±12V is lower than the original ±16V, potentially limiting gate drive flexibility. This option is not recommended for new applications.

Frequently Asked Questions (FAQ)

Q: Can IRF8736TRPBF directly replace STS17NH3LL without PCB modifications?

A: IRF8736TRPBF is mechanically compatible with the 8-SOIC footprint used by STS17NH3LL. The 8-SO package designation refers to the same physical form factor. No PCB modifications are required. Electrical parameters are superior or equivalent, making this a direct drop-in replacement.

Q: What is the difference between 8-SOIC and 8-SO package designations?

A: Both designations refer to 8-pin small outline integrated circuit packages with identical physical dimensions (0.154" width, 3.90mm). The terminology varies by manufacturer but represents the same mechanical footprint. Parts specified as 8-SO are compatible with 8-SOIC PCB layouts.

Q: Why does FDS8896 have higher gate charge (67nC) compared to STS17NH3LL (24nC)?

A: Gate charge is measured at different Vgs levels: FDS8896 at 10V versus STS17NH3LL at 4.5V. Higher measurement voltage results in higher gate charge values. This difference affects gate drive circuit design but does not prevent substitution. Gate drive circuits must be verified for compatibility with the specific gate charge and Vgs requirements of the selected substitute.

Q: Is FDS6682 suitable as a substitute despite its 1W power dissipation rating versus 2.7W for STS17NH3LL?

A: Power dissipation ratings reflect thermal design specifications at specific test conditions. FDS6682 with 1W rating indicates lower thermal capability. Substitution is only appropriate if the application's actual power dissipation remains below 1W. Applications requiring the full 2.7W thermal budget must use alternatives with higher power dissipation ratings.

Q: What does "Not For New Designs" product status mean for IRF8113TRPBF?

A: This status indicates the manufacturer does not recommend the part for new circuit designs. The part remains available for existing product support and maintenance. For new designs, Active status parts such as IRF8736TRPBF are preferred to ensure long-term supply chain stability and manufacturer support.

Q: Can I use FDS6670A if my application only requires 13A instead of 17A?

A: Yes, FDS6670A is suitable for applications with maximum current requirements of 13A or less. The 30V Vdss rating, operating temperature range, and 8-SOIC package provide full compatibility. Verify that the higher Rds On value (8mOhm versus 5.7mOhm) does not create unacceptable power dissipation in your specific circuit.

Q: Why is Vgs (Max) different across substitute parts?

A: Vgs (Max) represents the maximum gate-to-source voltage the device can withstand without damage. IRF7809AVTRPBF has ±12V limit versus ±20V for most other substitutes. Gate drive circuits must be designed to remain within the specified Vgs (Max) range of the selected device. Higher Vgs (Max) ratings provide greater design flexibility.

Q: Are all substitute parts RoHS3 compliant?

A: IRF8736TRPBF, IRF8113TRPBF, FDS8896, FDS6682, and IRF7809AVTRPBF are confirmed RoHS3 compliant. FDS6670A compliance status is not specified in available data. Verify RoHS3 compliance with the supplier before selecting FDS6670A for applications requiring regulatory certification.

Q: What is the impact of different Rds On values on circuit performance?

A: Rds On (on-resistance) directly affects power dissipation and heat generation. Lower Rds On values reduce power loss and heat output. IRF8736TRPBF at 4.8mOhm provides superior efficiency compared to STS17NH3LL at 5.7mOhm. Higher Rds On values in lower-tier substitutes increase power dissipation proportionally, requiring thermal management verification.

Q: Can I substitute multiple parts within the same design for supply chain flexibility?

A: Yes, multiple substitutes can be qualified for the same design position if electrical and thermal parameters are verified for each part. IRF8736TRPBF and FDS8896 are both Active status parts suitable for parallel qualification. Ensure gate drive circuits accommodate the range of gate charge values across selected substitutes.

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