STS17NF3LL N-Channel 30V 17A MOSFET Equivalent & Substitute Parts

Part Overview

The STS17NF3LL is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 17A continuous drain current at 25°C. This device is part of the STripFET™ II series and is packaged in an 8-SOIC surface mount configuration. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	17	A
Rds On (Max) @ 8.5A, 10V	5.5	mOhm
Gate Charge (Qg) @ 4.5V	35	nC
Input Capacitance (Ciss) @ 25V	2160	pF
Power Dissipation (Max)	3.2	W
Operating Temperature Range	-55 to 175	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution of the STS17NF3LL is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 17A at 25°C
Gate Charge (Qg): Lower values reduce switching losses; higher values acceptable within thermal limits
Rds On: Lower values reduce conduction losses; higher values acceptable if power dissipation remains within limits
Operating Temperature Range: Must support the application's thermal requirements

Mechanical Compatibility Requirements:

Package Type: 8-SOIC or equivalent surface mount packages with identical pin configuration
Mounting Type: Surface mount only
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) for all parts

Regulatory Compliance:

RoHS3 Compliance: Required
REACH Status: Unaffected
ECCN: EAR99

Substitute parts are grouped into three categories based on current rating and thermal characteristics: parts rated 16-17A (closest match), parts rated 18-20A (higher current capability), and parts rated 13-14A (lower current capability with acceptable thermal performance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	Package	Status
STS17NF3LL	STMicroelectronics	30	17	5.5	35	2160	3.2	-55 to 175	8-SOIC	Obsolete
AO4430	Alpha & Omega Semiconductor	30	18	5.5	124	7270	3.0	-55 to 150	8-SOIC	Not For New Designs
DMN3007LSS-13	Diodes Incorporated	30	16	7.0	64.2	2714	2.5	-55 to 150	8-SOP	Active
FDS8870	onsemi	30	18	4.2	112	4615	2.5	-55 to 150	8-SOIC	Active
HAT2197R-EL-E	Renesas Electronics	30	16	6.7	18	2650	2.5	-55 to 150	8-SOP	Active
IRF7809AVTRPBF	Infineon Technologies	30	13.3	9.0	62	3780	2.5	-55 to 150	8-SO	Obsolete
IRF7832TRPBF	Infineon Technologies	30	20	4.0	51	4310	2.5	-55 to 155	8-SO	Active
IRF8113TRPBF	Infineon Technologies	30	17.2	5.6	36	2910	2.5	-55 to 150	8-SO	Not For New Designs
IRF8736TRPBF	Infineon Technologies	30	18	4.8	26	2315	2.5	-55 to 150	8-SO	Active
RSS140N03TB	Rohm Semiconductor	30	14	6.7	37	3150	2.0	-55 to 150	8-SOP	Active
SI4386DY-T1-GE3	Vishay Siliconix	30	11	7.0	18	Not Specified	1.47	-55 to 150	8-SOIC	Active

Engineering Selection Recommendations

Primary Substitutes (Closest Electrical Match):

IRF8113TRPBF and IRF8736TRPBF are the most suitable substitutes for the STS17NF3LL. Both devices maintain the 30V Vdss rating and provide 17.2A and 18A continuous drain current respectively, meeting or exceeding the original 17A specification. IRF8736TRPBF is recommended as the first choice due to its active product status, superior gate charge characteristics (26 nC), and lowest input capacitance (2315 pF), which result in improved switching performance. Both parts are available in 8-SO packages compatible with 8-SOIC footprints.

Secondary Substitutes (Higher Current Capability):

FDS8870 and IRF7832TRPBF provide 18A and 20A continuous drain current respectively, offering increased design margin. FDS8870 features the lowest Rds On (4.2 mOhm) among all substitutes, reducing conduction losses. IRF7832TRPBF extends the operating temperature range to 155°C. Both maintain active product status and 8-SO/8-SOIC package compatibility.

Tertiary Substitutes (Reduced Current Capability):

DMN3007LSS-13, HAT2197R-EL-E, and RSS140N03TB are rated for 16A, 16A, and 14A respectively. These parts are suitable only for applications where the 17A specification can be reduced or where thermal management allows lower current operation. All three maintain active product status and RoHS3 compliance.

Parts to Avoid:

AO4430 and IRF7809AVTRPBF are classified as "Not For New Designs" or "Obsolete" and should not be selected for new designs despite electrical compatibility.

Compliance Verification:

All recommended substitutes maintain RoHS3 compliance, REACH unaffected status, and EAR99 ECCN classification, matching the regulatory profile of the original STS17NF3LL.

Frequently Asked Questions (FAQ)

Q: Can I use IRF8736TRPBF as a direct replacement for STS17NF3LL?

A: IRF8736TRPBF is electrically compatible with the STS17NF3LL. Both devices share identical 30V Vdss rating, similar continuous drain current (18A vs. 17A), and compatible 8-SO/8-SOIC package footprints. The IRF8736TRPBF offers superior switching characteristics with lower gate charge (26 nC vs. 35 nC) and input capacitance (2315 pF vs. 2160 pF). Verification of thermal performance in your specific application is required.

Q: What is the difference between 8-SOIC and 8-SO packages?

A: 8-SOIC and 8-SO are equivalent surface mount packages with identical pin configurations and footprints. Both designations refer to 8-pin small outline integrated circuits with 0.154" (3.90mm) width. Parts specified as 8-SO or 8-SOP are mechanically and electrically interchangeable with 8-SOIC footprints.

Q: Why does FDS8870 have lower Rds On than the original STS17NF3LL?

A: FDS8870 features 4.2 mOhm Rds On compared to STS17NF3LL's 5.5 mOhm. This lower on-resistance results from onsemi's PowerTrench® technology, which provides improved channel design and reduced conduction losses. Lower Rds On reduces heat generation during operation, improving overall efficiency.

Q: Can I use SI4386DY-T1-GE3 as a substitute?

A: SI4386DY-T1-GE3 is not recommended as a primary substitute. Although it maintains the 30V Vdss rating and 8-SOIC package compatibility, its 11A continuous drain current rating is significantly below the STS17NF3LL's 17A specification. This part is suitable only for applications where current requirements can be reduced or where parallel device configurations are implemented.

Q: What is the significance of Gate Charge (Qg) in MOSFET substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and allow faster switching speeds. The STS17NF3LL specifies 35 nC at 4.5V. Substitutes with lower gate charge (such as IRF8736TRPBF at 26 nC) improve switching efficiency, while higher values increase switching losses but may offer other performance benefits.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the regulatory requirements of the original STS17NF3LL. Compliance verification is recommended during final design validation.

Q: What is the operating temperature difference between STS17NF3LL and its substitutes?

A: The STS17NF3LL operates from -55°C to 175°C (Tj), providing the widest temperature range among all listed parts. Most substitutes operate from -55°C to 150°C, representing a 25°C reduction in maximum junction temperature. Applications requiring operation above 150°C must retain the original STS17NF3LL or verify thermal performance with alternative designs.

Q: Can I use multiple lower-current devices in parallel to replace the STS17NF3LL?

A: Parallel MOSFET configurations are possible but require careful gate drive design, matched Rds On characteristics, and thermal management to ensure current distribution. This approach is not recommended for direct substitution without detailed circuit analysis and thermal modeling.

Q: Which substitute offers the best thermal performance?

A: FDS8870 and IRF8736TRPBF offer superior thermal performance through lower Rds On values (4.2 mOhm and 4.8 mOhm respectively) compared to the STS17NF3LL (5.5 mOhm). Lower on-resistance reduces conduction losses and heat generation. However, maximum power dissipation ratings (2.5W) are lower than the original part (3.2W), requiring application-specific thermal analysis.

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