STS12NF30L N-Channel 30V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The STS12NF30L is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device is housed in an 8-SOIC surface mount package and is part of the STripFET™ II series. The part is currently listed as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	12	A (Tc)
On-State Resistance (Rds On) @ 6A, 10V	9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 4.5V	50	nC
Maximum Gate Voltage (Vgs)	±16	V
Input Capacitance (Ciss) @ 25V	2400	pF
Power Dissipation (Max) @ Ta	2.5	W
Operating Temperature (TJ)	150	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the STS12NF30L is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be 8-SOIC or mechanically compatible 8-SOP
Mounting Type: Surface Mount
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 12A at 25°C
On-State Resistance (Rds On): Comparable performance at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
Maximum Gate Voltage (Vgs): Must accommodate ±16V or greater
Power Dissipation: Minimum 2.5W at Ta
Operating Temperature: Minimum 150°C junction temperature
RoHS3 Compliance: Required for regulatory alignment
MSL Rating: Level 1 preferred for unlimited moisture exposure

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with active product status) and Similar Alternatives (meeting electrical requirements with variations in secondary parameters or product status).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Vgs Max (V)	Ciss (pF)	Package	Status
STS12NF30L	STMicroelectronics	30	12	9 @ 6A, 10V	1 @ 250µA	50 @ 4.5V	±16	2400 @ 25V	8-SOIC	Obsolete
SI4174DY-T1-GE3	Vishay Siliconix	30	17	9.5 @ 10A, 10V	2.2 @ 250µA	27 @ 10V	±20	985 @ 15V	8-SOIC	Active
DMN3010LSS-13	Diodes Incorporated	30	16	9 @ 16A, 10V	2 @ 250µA	43.7 @ 10V	±20	2096 @ 15V	8-SOP	Active
FDS6670A	Fairchild Semiconductor	30	13	8 @ 13A, 10V	3 @ 250µA	30 @ 5V	±20	2220 @ 15V	8-SOIC	Active
FDS6680A	onsemi	30	12.5	9.5 @ 12.5A, 10V	3 @ 250µA	23 @ 5V	±20	1620 @ 15V	8-SOIC	Active
FDS8880	onsemi	30	11.6	10 @ 11.6A, 10V	2.5 @ 250µA	30 @ 10V	±20	1235 @ 15V	8-SOIC	Active
HAT2197R-EL-E	Renesas Electronics Corporation	30	16	6.7 @ 8A, 10V	Not specified	18 @ 4.5V	±20	2650 @ 10V	8-SOP	Active
IRF7413ZTRPBF	Infineon Technologies	30	13	10 @ 13A, 10V	2.25 @ 25µA	14 @ 4.5V	±20	1210 @ 15V	8-SO	Active
IRF7458TRPBF	Infineon Technologies	30	14	8 @ 14A, 16V	4 @ 250µA	59 @ 10V	±30	2410 @ 15V	8-SO	Not For New Designs
IRF7809AVTRPBF	Infineon Technologies	30	13.3	9 @ 15A, 4.5V	1 @ 250µA	62 @ 5V	±12	3780 @ 16V	8-SO	Obsolete
IRF7821TRPBF	Infineon Technologies	30	13.6	9.1 @ 13A, 10V	1 @ 250µA	14 @ 4.5V	±20	1010 @ 15V	8-SO	Active

Engineering Selection Recommendations

Recommended Direct Equivalents (Active Status, Full Compliance):

SI4174DY-T1-GE3 (Vishay Siliconix) – Highest current rating (17A) with active product status and ROHS3 compliance. Suitable for applications requiring current margin above the original 12A specification. Lower gate charge (27 nC) and reduced input capacitance (985 pF) provide improved switching performance.
IRF7821TRPBF (Infineon Technologies) – Active product with 13.6A continuous drain current. Matches original gate threshold voltage (1V @ 250µA) and provides superior gate charge characteristics (14 nC @ 4.5V). Extended operating temperature range to 155°C. ROHS3 compliant with unlimited MSL rating.
FDS6680A (onsemi) – Closest current rating match (12.5A) with active status. PowerTrench® series technology. ROHS3 compliant with unlimited MSL. Reduced input capacitance (1620 pF) compared to original specification.

Alternative Selections (Active Status, Minor Parameter Variations):

DMN3010LSS-13 (Diodes Incorporated) – 16A rating with active status. Identical Rds On specification (9 mOhm @ 10V). 8-SOP package requires PCB layout verification for mechanical compatibility with 8-SOIC footprint.
FDS6670A (Fairchild Semiconductor) – 13A rating with superior Rds On (8 mOhm @ 13A, 10V). Active product status with ROHS3 compliance. Higher gate threshold voltage (3V @ 250µA) requires gate drive circuit evaluation.
HAT2197R-EL-E (Renesas Electronics Corporation) – 16A rating with lowest Rds On (6.7 mOhm @ 8A, 10V). Active status with ROHS3 compliance. 8-SOP package requires mechanical compatibility assessment.

Not Recommended for New Designs:

IRF7458TRPBF – Product status listed as "Not For New Designs"
IRF7809AVTRPBF – Obsolete product status (same as original part)

All recommended substitutes maintain 30V Vdss rating, surface mount configuration, 8-SOIC or compatible 8-SOP packaging, and ROHS3 compliance with MSL Level 1 rating.

Frequently Asked Questions (FAQ)

Q: Can the SI4174DY-T1-GE3 directly replace the STS12NF30L without circuit modifications?

A: The SI4174DY-T1-GE3 meets all primary electrical specifications (30V Vdss, 8-SOIC package, N-Channel MOSFET). The higher current rating (17A vs. 12A) and lower gate charge (27 nC vs. 50 nC) provide improved performance margins. Gate threshold voltage differs (2.2V vs. 1V), requiring verification that gate drive voltage remains within the device's ±20V maximum rating. No circuit modifications are required if gate drive voltage is adequate.

Q: What is the significance of the 8-SOP package variant compared to 8-SOIC?

A: Both 8-SOP and 8-SOIC packages share the same 0.154" (3.90mm) width and pin pitch. The primary difference is body thickness and lead configuration. Parts such as DMN3010LSS-13 and HAT2197R-EL-E in 8-SOP packaging are mechanically compatible with 8-SOIC PCB footprints. Verify footprint dimensions with component datasheets before assembly.

Q: Why does IRF7821TRPBF have lower gate charge than the original STS12NF30L?

A: Gate charge (Qg) is determined by the internal capacitance of the MOSFET die and gate drive circuit design. IRF7821TRPBF specifies 14 nC @ 4.5V compared to STS12NF30L's 50 nC @ 4.5V. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications. This is a performance advantage, not a limitation.

Q: Is the FDS6680A suitable for applications requiring exactly 12A continuous current?

A: Yes. FDS6680A is rated for 12.5A continuous drain current at 25°C, exceeding the 12A requirement of the original STS12NF30L. The 0.5A margin provides operational headroom. Rds On specification (9.5 mOhm @ 12.5A, 10V) is comparable to the original (9 mOhm @ 6A, 10V), ensuring similar thermal performance.

Q: What does "Not For New Designs" status mean for IRF7458TRPBF?

A: "Not For New Designs" indicates that Infineon Technologies does not recommend this part for new circuit designs, though existing inventory may remain available. The part remains functional and compliant with specifications. For new designs, select from parts with "Active" product status such as SI4174DY-T1-GE3, IRF7821TRPBF, or FDS6680A.

Q: How do I verify that a substitute part is compatible with my gate drive circuit?

A: Compare three parameters: (1) Gate Threshold Voltage (Vgs(th)) – ensure your gate drive voltage exceeds this value; (2) Maximum Gate Voltage (Vgs) – confirm your drive voltage does not exceed this limit; (3) Gate Charge (Qg) – verify your gate driver can supply sufficient charge within acceptable switching time. All recommended substitutes accept ±20V gate voltage, accommodating most standard gate drive circuits.

Q: Why do some parts specify Rds On at different current levels?

A: On-state resistance varies with drain current and gate voltage due to semiconductor physics. Manufacturers specify Rds On at conditions representative of typical application use. For example, STS12NF30L specifies 9 mOhm @ 6A, 10V, while DMN3010LSS-13 specifies 9 mOhm @ 16A, 10V. Both values are valid at their respective conditions. Compare Rds On at your application's operating current and gate voltage for accurate thermal analysis.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All recommended substitute parts listed in this document carry ROHS3 compliance certification. The original STS12NF30L also meets ROHS3 requirements. Compliance status is verified in the provided specifications.

Q: What is MSL Level 1 and why is it important?

A: Moisture Sensitivity Level (MSL) 1 indicates unlimited shelf life without moisture bake-out requirements. All recommended substitutes carry MSL Level 1 rating, matching the original part. This simplifies inventory management and eliminates moisture-related handling procedures.

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