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STS12N3LLH5 N-Channel MOSFET 30V 12A Equivalent & Substitute Parts
Part Overview
The STS12N3LLH5 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device is part of the STripFET™ V series and is packaged in an 8-SOIC surface mount configuration. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 12 | A |
| On-State Resistance (Rds On) @ 6A, 10V | 7.5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 1 | V |
| Gate Charge (Qg) @ 4.5V | 8 | nC |
| Input Capacitance (Ciss) @ 25V | 1290 | pF |
| Power Dissipation (Max) | 2.7 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-SOIC | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the STS12N3LLH5 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain-to-Source Voltage (Vdss) must equal or exceed 30V
- Continuous Drain Current (Id) must meet or exceed 12A at 25°C
- On-State Resistance (Rds On) characteristics must support equivalent switching performance
- Gate Threshold Voltage (Vgs(th)) must be compatible with existing drive circuitry
- Operating temperature range must span -55°C to 150°C minimum
Mechanical Compatibility Criteria:
- Package type must be 8-SOIC or equivalent surface mount configuration
- Pin configuration must maintain PCB layout compatibility
- Mounting type must be surface mount
Regulatory Compliance:
- RoHS3 compliance required
- Moisture Sensitivity Level 1 (Unlimited) required
- REACH Unaffected status required
Substitute parts are grouped based on whether they meet all electrical requirements while maintaining mechanical and regulatory compatibility. Parts with higher current ratings or lower on-state resistance values are acceptable as direct substitutes provided all other parameters remain within acceptable ranges.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Pd (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|
| STS12N3LLH5 | STMicroelectronics | 30 | 12 | 7.5 @ 6A, 10V | 1 @ 250µA | 8 @ 4.5V | 1290 @ 25V | 2.7 | 8-SOIC | Obsolete |
| AO4430 | Alpha & Omega Semiconductor | 30 | 18 | 5.5 @ 18A, 10V | 2.5 @ 250µA | 124 @ 10V | 7270 @ 15V | 3 | 8-SOIC | Not For New Designs |
| AO4476A | Alpha & Omega Semiconductor | 30 | 15 | 7.7 @ 15A, 10V | 2.5 @ 250µA | 24 @ 10V | 1380 @ 15V | 3.1 | 8-SOIC | Not For New Designs |
| AO4576 | Alpha & Omega Semiconductor | 30 | 20 | 5.8 @ 20A, 10V | 2.2 @ 250µA | 22.5 @ 10V | 951 @ 15V | 3.1 | 8-SOIC | Active |
| DMN3007LSS-13 | Diodes Incorporated | 30 | 16 | 7 @ 15A, 10V | 2.1 @ 250µA | 64.2 @ 10V | 2714 @ 15V | 2.5 | 8-SOP | Active |
| FDS8896 | onsemi | 30 | 15 | 6 @ 15A, 10V | 2.5 @ 250µA | 67 @ 10V | 2525 @ 15V | 2.5 | 8-SOIC | Active |
| HAT2197R-EL-E | Renesas Electronics | 30 | 16 | 6.7 @ 8A, 10V | — | 18 @ 4.5V | 2650 @ 10V | 2.5 | 8-SOP | Active |
| IRF7809AVTRPBF | Infineon Technologies | 30 | 13.3 | 9 @ 15A, 4.5V | 1 @ 250µA | 62 @ 5V | 3780 @ 16V | 2.5 | 8-SO | Obsolete |
| IRF7821TRPBF | Infineon Technologies | 30 | 13.6 | 9.1 @ 13A, 10V | 1 @ 250µA | 14 @ 4.5V | 1010 @ 15V | 2.5 | 8-SO | Active |
Engineering Selection Recommendations
Primary Substitute (Active Status): The AO4576 from Alpha & Omega Semiconductor is the preferred substitute. It meets all electrical requirements with 20A continuous drain current, exceeding the 12A specification of the STS12N3LLH5. The device maintains 30V Vdss rating, operates across the required temperature range, and is classified as Active for new designs. RoHS3 compliance and MSL 1 rating are confirmed. The 8-SOIC package provides direct mechanical compatibility.
Secondary Substitutes (Active Status): The FDS8896 from onsemi and HAT2197R-EL-E from Renesas Electronics are acceptable alternatives. Both devices provide 15-16A continuous drain current, 30V Vdss, and Active product status. FDS8896 uses the 8-SOIC package matching the original footprint. HAT2197R-EL-E uses 8-SOP packaging, which requires PCB layout verification for pin compatibility.
Acceptable Alternatives (Not For New Designs): AO4476A and AO4430 from Alpha & Omega Semiconductor meet electrical specifications but carry "Not For New Designs" status. These parts are suitable for replacement in existing applications where design changes are not feasible.
Obsolete Alternatives: IRF7809AVTRPBF and the original STS12N3LLH5 are both classified as obsolete. IRF7809AVTRPBF provides 13.3A continuous drain current and meets electrical requirements but should not be selected for new designs.
Regulatory Compliance: All listed substitutes maintain RoHS3 compliance, MSL 1 rating, and REACH Unaffected status, matching the original part's regulatory profile.
Frequently Asked Questions (FAQ)
Q: Can the AO4576 directly replace the STS12N3LLH5 in existing designs? A: Yes. The AO4576 provides equivalent electrical performance with higher current capability (20A vs. 12A), maintains 30V Vdss rating, and uses the same 8-SOIC package. All regulatory certifications match the original specification.
Q: What is the difference between 8-SOIC and 8-SOP packages? A: Both are surface mount packages with eight pins in similar physical dimensions (0.154" width, 3.90mm). Pin pitch and lead configuration are identical, allowing direct PCB footprint compatibility. The designations reflect different manufacturing standards but are mechanically interchangeable.
Q: Why is the IRF7809AVTRPBF listed as a substitute if it is obsolete? A: The IRF7809AVTRPBF meets all electrical requirements for the STS12N3LLH5 and is documented in the original part's substitute list. However, it is classified as obsolete and should not be selected for new designs. It remains available for replacement in existing applications where design continuity is required.
Q: Does higher gate charge (Qg) affect circuit performance? A: Gate charge affects switching speed and driver circuit requirements. The AO4430 has significantly higher gate charge (124 nC vs. 8 nC) compared to the STS12N3LLH5. Verify that existing gate driver circuits can supply the required charge within acceptable switching time parameters before selection.
Q: Are there thermal considerations when substituting with higher current-rated devices? A: All listed substitutes maintain equivalent or lower power dissipation ratings (2.5-3.1W vs. 2.7W). Higher current capability does not increase thermal load in equivalent operating conditions. Thermal performance depends on PCB layout, heatsinking, and actual operating current, which remain unchanged from the original design.
Q: Which substitute offers the lowest on-state resistance? A: The AO4576 provides the lowest on-state resistance at 5.8 mOhm (measured at 20A, 10V), compared to 7.5 mOhm for the STS12N3LLH5 (measured at 6A, 10V). Lower on-state resistance reduces power dissipation and heat generation during operation.
Q: Can I use FDS8896 if my PCB is designed for 8-SOIC packages? A: Yes. The FDS8896 is packaged in 8-SOIC, matching the original STS12N3LLH5 footprint exactly. No PCB modifications are required for this substitution.
Q: What is the significance of "Not For New Designs" status? A: Parts marked "Not For New Designs" are in mature or declining production phases. They remain available for replacement in existing applications but should not be selected for new product development. For new designs, select parts with "Active" status such as AO4576, FDS8896, or IRF7821TRPBF.
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