STS11NF30L N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The STS11NF30L is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 11A continuous drain current. This device is part of the STripFET™ II series and is packaged in an 8-SOIC surface mount configuration. The part is currently classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing design support and production continuity. Active substitute parts with comparable electrical characteristics and identical packaging are available from multiple manufacturers including onsemi, Diodes Incorporated, Infineon Technologies, and Alpha & Omega Semiconductor Inc.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11	A
On-State Resistance (Rds On) @ 10V, 5.5A	10.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 5V	30	nC
Input Capacitance (Ciss) @ 25V	1440	pF
Maximum Gate Voltage (Vgs)	±18	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount
Package	8-SOIC
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the STS11NF30L is determined by strict alignment of the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Package Type: 8-SOIC surface mount configuration
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C
RoHS3 Compliance and MSL Level 1 rating

Performance Compatibility Criteria:

Continuous Drain Current (Id): 10.2A or greater at 25°C
On-State Resistance (Rds On): 14 mOhm or lower at 10V
Gate Threshold Voltage (Vgs(th)): 1V to 3V at 250µA
Maximum Gate Voltage (Vgs): ±18V or greater
Power Dissipation: 2.5W or greater

Substitute parts are grouped into two categories: direct equivalents with matching Vdss and current ratings, and functional equivalents with enhanced current handling or voltage ratings that maintain backward compatibility within the 30V class.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ Vgs (nC)	Ciss @ Vds (pF)	Vgs Max (V)	Power Diss (W)	Package	Status
STS11NF30L	STMicroelectronics	30	11	10.5	1	30 @ 5V	1440 @ 25V	±18	2.5	8-SOIC	Obsolete
FDS6690A	onsemi	30	11	12.5	3	16 @ 5V	1205 @ 15V	±20	2.5	8-SOIC	Active
FDS6680A	onsemi	30	12.5	9.5	3	23 @ 5V	1620 @ 15V	±20	2.5	8-SOIC	Active
FDS8880	onsemi	30	11.6	10	2.5	30 @ 10V	1235 @ 15V	±20	2.5	8-SOIC	Active
FDS8878	Fairchild Semiconductor	30	10.2	14	2.5	26 @ 10V	897 @ 15V	±20	2.5	8-SOIC	Active
DMN3016LSS-13	Diodes Incorporated	30	10.3	12	2.5	25.1 @ 10V	1415 @ 15V	±20	1.5	8-SOIC	Active
DMN3010LSS-13	Diodes Incorporated	30	16	9	2	43.7 @ 10V	2096 @ 15V	±20	2.5	8-SOIC	Active
AO4492	Alpha & Omega Semiconductor Inc.	30	14	9.5	2.2	18 @ 10V	770 @ 15V	±20	3.1	8-SOIC	Obsolete
IRF7413ZTRPBF	Infineon Technologies	30	13	10	2.25	14 @ 4.5V	1210 @ 15V	±20	2.5	8-SOIC	Active
IRF7403TRPBF	Infineon Technologies	30	8.5	22	1	57 @ 10V	1200 @ 25V	±20	2.5	8-SOIC	Not For New Designs
FDS5672	onsemi	60	12	10	4	45 @ 10V	2200 @ 25V	±20	2.5	8-SOIC	Active

Engineering Selection Recommendations

Primary Substitute (Direct Equivalent):

FDS6690A (onsemi) is the recommended primary substitute for the STS11NF30L. This part maintains identical 30V/11A ratings, matching package configuration (8-SOIC), and equivalent power dissipation (2.5W). The FDS6690A is currently in active production status with ROHS3 compliance and MSL Level 1 rating. On-state resistance of 12.5 mOhm at 11A and 10V is within acceptable tolerance of the original 10.5 mOhm specification. Gate charge and input capacitance characteristics are comparable, supporting direct substitution in existing circuit designs.

Secondary Substitutes (Enhanced Performance):

FDS8880 (onsemi) provides improved on-state resistance (10 mOhm at 11.6A, 10V) with slightly higher current capability and active production status. This part is suitable for applications requiring lower conduction losses.

DMN3010LSS-13 (Diodes Incorporated) offers enhanced current handling (16A) with superior on-state resistance (9 mOhm at 16A, 10V) while maintaining 30V rating and 8-SOIC packaging. This part is recommended for designs requiring increased current margin or lower power dissipation.

IRF7413ZTRPBF (Infineon Technologies) provides 13A current rating with 10 mOhm on-state resistance and active production status. This part is suitable for applications requiring moderate current enhancement.

Voltage-Enhanced Substitute:

FDS5672 (onsemi) is a 60V-rated alternative with 12A current capability. This part is suitable only for applications where higher voltage headroom is required and the 30V rating of the original part is not a design constraint.

Parts Not Recommended for New Designs:

IRF7403TRPBF carries "Not For New Designs" status and should not be selected for new applications despite meeting electrical specifications.

AO4492 is classified as obsolete and should not be selected for production designs requiring long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can FDS6690A be used as a direct replacement for STS11NF30L without circuit modification?

A: Yes. FDS6690A maintains identical 30V/11A ratings, 8-SOIC packaging, and 2.5W power dissipation. Gate threshold voltage, maximum gate voltage, and operating temperature range are compatible. On-state resistance variance (12.5 mOhm vs. 10.5 mOhm) is within typical design tolerance for most applications.

Q: What is the primary difference between FDS6690A and FDS6680A?

A: FDS6680A provides higher continuous drain current (12.5A vs. 11A) with lower on-state resistance (9.5 mOhm vs. 12.5 mOhm). Both maintain 30V rating and 8-SOIC packaging. FDS6680A is suitable for applications requiring increased current margin or lower conduction losses.

Q: Why is DMN3010LSS-13 listed as a substitute despite higher current rating?

A: DMN3010LSS-13 (16A) exceeds the STS11NF30L (11A) current specification but maintains identical 30V voltage rating, 8-SOIC packaging, and 2.5W power dissipation. The lower on-state resistance (9 mOhm) and higher current capability provide backward compatibility with improved performance margin. This part is suitable for applications where the original 11A rating is not a hard constraint.

Q: Is FDS5672 suitable for replacing STS11NF30L in existing designs?

A: FDS5672 is not recommended as a direct replacement. While it maintains 8-SOIC packaging and 2.5W power dissipation, the 60V rating exceeds the original 30V specification. This part is suitable only for applications where higher voltage headroom is required and the circuit design can accommodate the voltage difference.

Q: What is the significance of the "Obsolete" product status for STS11NF30L?

A: Obsolete status indicates the part is no longer manufactured by STMicroelectronics and existing inventory is limited. Active substitute parts from onsemi, Diodes Incorporated, and Infineon Technologies provide equivalent or enhanced functionality with assured long-term supply availability.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitute parts listed carry ROHS3 compliance certification. Moisture Sensitivity Level (MSL) is Level 1 (Unlimited) for all parts, matching the original STS11NF30L specification.

Q: What is the impact of gate charge (Qg) differences between substitute parts?

A: Gate charge differences affect switching speed and gate drive requirements. FDS6690A (16 nC @ 5V) has lower gate charge than STS11NF30L (30 nC @ 5V), resulting in faster switching transitions and reduced gate drive power. IRF7413ZTRPBF (14 nC @ 4.5V) provides the lowest gate charge among active substitutes. These differences are typically accommodated by standard gate drive circuits without modification.

Q: Can IRF7403TRPBF be used despite "Not For New Designs" status?

A: IRF7403TRPBF meets electrical specifications for substitution but carries "Not For New Designs" status from Infineon Technologies. This designation indicates the manufacturer does not recommend this part for new circuit designs. Use of this part should be limited to legacy system maintenance where supply continuity is critical.

Q: What packaging considerations apply to these substitute parts?

A: All recommended substitute parts use 8-SOIC (0.154", 3.90mm width) surface mount packaging, identical to the STS11NF30L. No PCB layout or footprint modifications are required for substitution. Thermal management characteristics may vary slightly due to differences in die design and internal construction, but package dimensions and pin assignments are standardized.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message