STS10P3LLH6 Equivalent & Substitute Parts

Part Overview

The STS10P3LLH6 is a P-Channel MOSFET manufactured by STMicroelectronics, rated for 30V drain-to-source voltage with 10A continuous drain current at 25°C. This device operates in the STripFET™ H6 series and is housed in an 8-SOIC surface mount package. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining identical or superior mechanical compatibility and regulatory compliance. The following substitute devices meet the core functional requirements of the STS10P3LLH6 within their respective electrical operating windows.

Substiute Parts

STS10P3LLH6

STMicroelectronicsIn Stock: 2039STS10P3LLH6 Datasheet

Current PartRFQ

IRF7424TRPBF

Infineon TechnologiesIn Stock: 60210IRF7424TRPBF Datasheet

DirectRFQ

DMP3015LSS-13

Diodes IncorporatedIn Stock: 47610DMP3015LSS-13 Datasheet

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DMP3020LSS-13

Diodes IncorporatedIn Stock: 15434DMP3020LSS-13 Datasheet

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NTMS4177PR2G

onsemiIn Stock: 35344NTMS4177PR2G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STS10P3LLH6 are qualified based on the following core electrical and mechanical criteria:

Mandatory Matching Parameters:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 30V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS3 Compliance
• MSL Rating: 1 (Unlimited)

Allowable Variation Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 10A
• Rds On (Max): Equal to or less than 12 mOhm (at rated conditions)
• Vgs(th) (Max): Within ±20V gate voltage specification
• Gate Charge (Qg): Variation acceptable within switching performance envelope
• Input Capacitance (Ciss): Variation acceptable within circuit design margins
• Power Dissipation (Max): Equal to or greater than 2.7W

All substitute parts listed below satisfy these criteria and are confirmed Active products with full regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

All substitute parts listed maintain Active product status and full RoHS3 compliance with unlimited moisture sensitivity rating (MSL 1), ensuring regulatory and supply chain continuity with the STS10P3LLH6.

IRF7424TRPBF (Infineon Technologies HEXFET® Series): This part provides 11A continuous drain current, exceeding the 10A requirement of the STS10P3LLH6. The 13.5 mOhm on-resistance is marginally higher but remains within acceptable design margins. Gate charge of 110 nC is elevated compared to the main part, which may impact switching frequency performance in high-speed applications. This device is suitable for applications where current headroom is prioritized over switching efficiency.

DMP3015LSS-13 (Diodes Incorporated): This part delivers 13A continuous drain current with 11 mOhm on-resistance, providing superior current handling and lower conduction losses than the STS10P3LLH6. Gate charge of 60.4 nC and input capacitance of 2748 pF represent moderate switching characteristics. This device is suitable for applications requiring enhanced thermal performance and current margin.

DMP3020LSS-13 (Diodes Incorporated): This part provides 12A continuous drain current with 14 mOhm on-resistance. Gate charge of 30.7 nC is comparable to the main part, and input capacitance of 1802 pF is the lowest among substitutes, offering superior switching speed characteristics. Vgs (Max) extends to ±25V, providing additional gate voltage margin. This device is suitable for applications prioritizing switching efficiency and gate drive simplicity.

NTMS4177PR2G (onsemi): This part delivers 6.6A continuous drain current, which is below the 10A specification of the STS10P3LLH6. Power dissipation is limited to 840 mW, significantly lower than the main part. This device is not suitable as a direct substitute for applications requiring the full 10A current rating but may serve in current-limited or lower-power variants of the same circuit topology.

Frequently Asked Questions (FAQ)

Q: Can the IRF7424TRPBF replace the STS10P3LLH6 in all applications?

A: The IRF7424TRPBF is mechanically and electrically compatible with the STS10P3LLH6 in terms of package, voltage rating, and temperature range. However, the elevated gate charge (110 nC vs. 33 nC) may increase switching losses in high-frequency applications. Circuit-level validation is required to confirm performance in switching frequency-sensitive designs.

Q: Why is the NTMS4177PR2G listed as a substitute if it has only 6.6A rating?

A: The NTMS4177PR2G meets all mandatory mechanical and regulatory criteria (package, voltage, temperature, compliance) but falls short of the 10A current requirement. It is included in the substitute list as provided in the input parameters but is not recommended for applications requiring the full 10A continuous drain current specification.

Q: What is the primary difference between DMP3015LSS-13 and DMP3020LSS-13?

A: Both parts are from Diodes Incorporated and share identical voltage and temperature ratings. The DMP3015LSS-13 provides 13A current with 11 mOhm on-resistance and higher gate charge (60.4 nC), while the DMP3020LSS-13 provides 12A current with 14 mOhm on-resistance and lower gate charge (30.7 nC). Selection depends on whether current capacity or switching efficiency is prioritized.

Q: Are all substitute parts available in the same packaging format?

A: Yes. All substitute parts are housed in 8-SOIC (0.154", 3.90mm Width) surface mount packages, ensuring direct mechanical compatibility with the STS10P3LLH6 on printed circuit boards without layout modifications.

Q: Do all substitute parts meet the same regulatory compliance standards?

A: Yes. All substitute parts listed are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the regulatory profile of the STS10P3LLH6. All parts maintain Active product status.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge directly impacts switching speed and gate drive power requirements. The STS10P3LLH6 has 33 nC gate charge, while substitutes range from 30.7 nC to 110 nC. Lower gate charge enables faster switching and reduced driver power dissipation. Higher gate charge may require stronger gate drive circuits or result in increased switching losses at high frequencies.

Q: Can I use DMP3020LSS-13 in a design originally specified for STS10P3LLH6?

A: The DMP3020LSS-13 is mechanically and electrically compatible with identical voltage, temperature, and compliance specifications. The 12A current rating exceeds the 10A requirement, and the 30.7 nC gate charge is comparable to the main part. This device is suitable for direct substitution in most applications, with particular advantage in switching-frequency-sensitive designs due to lower gate charge.