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STPSC8065DY Silicon Carbide Schottky Diode Equivalent & Substitute Parts
Part Overview
The STPSC8065DY is a 650 V, 8 A silicon carbide Schottky diode manufactured by STMicroelectronics in the ECOPACK®2 series. This through-hole component is housed in a TO-220AC package and is designed for automotive-grade applications with AEC-Q101 qualification. The part is currently listed as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650 | V |
| Current - Average Rectified (Io) | 8 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 @ 8 A | V |
| Reverse Recovery Time (trr) | 0 | ns |
| Current - Reverse Leakage @ Vr | 105 | µA @ 650 V |
| Capacitance @ Vr, F | 540 | pF @ 0V, 1MHz |
| Package / Case | TO-220-2 | |
| Mounting Type | Through Hole | |
| Operating Temperature - Junction | -40 to 175 | °C |
| Technology | SiC (Silicon Carbide) Schottky | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the STPSC8065DY is determined by the following critical parameters:
Electrical Parameters:
- Voltage - DC Reverse (Vr) (Max): 650 V minimum
- Current - Average Rectified (Io): 8 A minimum
- Voltage - Forward (Vf) (Max): Tolerance range for forward voltage drop
- Reverse Recovery Time (trr): 0 ns (SiC Schottky characteristic)
- Current - Reverse Leakage @ Vr: Leakage current specification
Mechanical Parameters:
- Package / Case: TO-220-2 form factor
- Mounting Type: Through Hole
- Operating Temperature - Junction: -40°C to 175°C minimum
Compliance Parameters:
- Technology: SiC (Silicon Carbide) Schottky
- Grade: Automotive
- Qualification: AEC-Q101
- RoHS Status: ROHS3 Compliant
Substitute parts are classified into two categories: parametric equivalents (identical electrical and mechanical specifications) and similar alternatives (compatible electrical performance with minor parameter variations).
Parameter Comparison
| Parameter | STPSC8065DY (Main) | STPSC8065D (Parametric Equivalent) | STPSC10065DY (MFR Recommended) | UJ3D06508TS (Similar Alternative) |
|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics | Qorvo |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 8 A | 8 A | 10 A | 8 A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 8 A | 1.45 V @ 8 A | 1.45 V @ 10 A | 1.7 V @ 8 A |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 105 µA @ 650 V | 105 µA @ 650 V | 130 µA @ 650 V | 50 µA @ 650 V |
| Capacitance @ Vr, F | 540 pF @ 0V, 1MHz | 540 pF @ 0V, 1MHz | 670 pF @ 0V, 1MHz | 250 pF @ 1V, 1MHz |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature - Junction | -40 to 175°C | -40 to 175°C | -40 to 175°C | -55 to 175°C |
| Technology | SiC Schottky | SiC Schottky | SiC Schottky | SiC Schottky |
| Grade | Automotive | Automotive | Automotive | Not Specified |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | Not Specified |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
STPSC8065D (Parametric Equivalent)
The STPSC8065D is a direct parametric equivalent to the STPSC8065DY. Both components share identical electrical specifications (650 V, 8 A, 1.45 V forward voltage, 105 µA reverse leakage) and mechanical packaging (TO-220-2, through-hole). The STPSC8065D maintains active product status, automotive grade qualification, and AEC-Q101 certification. This component is the preferred substitute for direct replacement in existing designs without circuit modification.
STPSC10065DY (Manufacturer Recommended Upgrade)
The STPSC10065DY is the manufacturer-recommended upgrade path from the obsolete STPSC8065DY. This component increases the average rectified current rating from 8 A to 10 A while maintaining the same 650 V reverse voltage rating and TO-220-2 package. The forward voltage remains at 1.45 V, and all automotive qualifications (AEC-Q101) and compliance certifications are retained. This option is suitable for applications requiring higher current capacity or future design margin. The increased reverse leakage (130 µA versus 105 µA) and capacitance (670 pF versus 540 pF) remain within acceptable ranges for most power conversion applications.
UJ3D06508TS (Alternative from Secondary Manufacturer)
The UJ3D06508TS from Qorvo provides electrical compatibility at 650 V and 8 A ratings with identical zero reverse recovery time. This component features lower reverse leakage (50 µA) and reduced capacitance (250 pF), which may benefit high-frequency switching applications. However, this part does not carry automotive grade designation or AEC-Q101 qualification. The forward voltage is higher at 1.7 V compared to 1.45 V, resulting in increased power dissipation. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin. This option is suitable for non-automotive applications or where the performance characteristics align with circuit requirements.
Frequently Asked Questions (FAQ)
Q: Can the STPSC8065D directly replace the STPSC8065DY in existing designs?
A: Yes. The STPSC8065D is a parametric equivalent with identical electrical and mechanical specifications. Both components feature 650 V reverse voltage, 8 A average rectified current, 1.45 V forward voltage at 8 A, and TO-220-2 through-hole packaging. No circuit modifications are required.
Q: What is the difference between the STPSC8065DY and STPSC10065DY?
A: The primary difference is the average rectified current rating: STPSC8065DY is rated at 8 A, while STPSC10065DY is rated at 10 A. Both maintain 650 V reverse voltage and identical forward voltage characteristics. The STPSC10065DY exhibits slightly higher reverse leakage (130 µA versus 105 µA) and capacitance (670 pF versus 540 pF). Both are automotive-grade with AEC-Q101 qualification.
Q: Is the UJ3D06508TS suitable for automotive applications?
A: The UJ3D06508TS does not carry automotive grade designation or AEC-Q101 qualification. This component is suitable for industrial and consumer applications where automotive compliance is not required. For automotive designs, the STPSC8065D or STPSC10065DY are the appropriate selections.
Q: How does forward voltage affect component selection?
A: Forward voltage directly impacts power dissipation and thermal management. The STPSC8065DY and STPSC8065D both specify 1.45 V at 8 A, while the UJ3D06508TS specifies 1.7 V at 8 A. The 0.25 V difference results in increased power loss in the UJ3D06508TS. For applications with tight thermal budgets, the lower forward voltage of the STMicroelectronics options is preferable.
Q: What does reverse leakage current indicate?
A: Reverse leakage current is the small current that flows through the diode when reverse-biased. Lower leakage current indicates better blocking characteristics. The STPSC8065DY and STPSC8065D specify 105 µA at 650 V, while the UJ3D06508TS specifies 50 µA at 650 V. The UJ3D06508TS exhibits superior reverse blocking performance, though both values are acceptable for most applications.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. The STPSC8065DY, STPSC8065D, STPSC10065DY, and UJ3D06508TS are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.
Q: Can the STPSC10065DY be used in place of the STPSC8065DY?
A: Yes. The STPSC10065DY is a higher-current-rated variant suitable for applications requiring increased current capacity. The 10 A rating provides design margin over the original 8 A specification. All electrical and mechanical parameters are compatible, and automotive qualifications are maintained. This substitution is appropriate for new designs or upgrades.
Q: What is the significance of zero reverse recovery time?
A: Zero reverse recovery time is a characteristic of silicon carbide Schottky diodes. This eliminates the delay associated with charge carrier removal during switching transitions, enabling faster switching speeds and reduced electromagnetic interference compared to conventional silicon rectifiers. All substitute options maintain this SiC Schottky technology.
Q: How does capacitance affect circuit performance?
A: Capacitance influences switching speed and high-frequency performance. The STPSC8065DY and STPSC8065D specify 540 pF at 0 V, the STPSC10065DY specifies 670 pF, and the UJ3D06508TS specifies 250 pF. Lower capacitance (UJ3D06508TS) benefits high-frequency applications, while higher capacitance may require additional circuit compensation in sensitive applications.
Q: Is the TO-220-2 package compatible across all substitute parts?
A: Yes. All substitute parts (STPSC8065D, STPSC10065DY, and UJ3D06508TS) utilize the TO-220-2 through-hole package, ensuring mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.
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