STPSC4H065DLF Equivalent & Substitute Parts

Part Overview

The STPSC4H065DLF is a Silicon Carbide (SiC) Schottky diode manufactured by STMicroelectronics, rated for 650 V DC reverse voltage and 4 A average rectified current. This device is packaged in a Surface Mount PowerFlat™ (8x8) configuration and is classified as Active product status with ROHS3 compliance. The STPSC4H065DLF operates across a junction temperature range of -40°C to 175°C and features zero reverse recovery time, making it suitable for high-frequency switching applications requiring minimal switching losses. Equivalent and substitute parts are identified to provide design flexibility, supply chain alternatives, and component availability options for applications where the primary part may be unavailable or where alternative packaging configurations are acceptable.

Substiute Parts

STPSC4H065DLF

STMicroelectronicsIn Stock: 842STPSC4H065DLF Datasheet

Current PartRFQ

FFSM0465A

onsemiIn Stock: 1200FFSM0465A Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the STPSC4H065DLF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4 A
• Technology: SiC (Silicon Carbide) Schottky
• Reverse Recovery Time (trr): 0 ns (no recovery time > 500 mA)

Mechanical Equivalence Criteria:

• Mounting Type: Surface Mount
• Package footprint compatibility: 8x8 mm form factor

Compliance Criteria:

• RoHS3 Compliant
• Product Status: Active

The FFSM0465A from onsemi meets all electrical equivalence criteria with identical voltage and current ratings, SiC Schottky technology, and zero reverse recovery time. Both devices are Surface Mount components with 8x8 mm package dimensions, ROHS3 compliance, and Active product status. Differences in forward voltage drop (1.75 V vs. 1.55 V at 4 A) and reverse leakage current (200 µA vs. 40 µA at 650 V) are within acceptable tolerance ranges for SiC Schottky diode technology and do not preclude substitution in applications where the primary part is unavailable.

Parameter Comparison

Engineering Selection Recommendations

STPSC4H065DLF (Primary Selection): The STPSC4H065DLF is the primary component choice when available. It is manufactured by STMicroelectronics, carries Active product status, and is ROHS3 compliant. This device exhibits lower forward voltage drop (1.55 V at 4 A) and lower reverse leakage current (40 µA at 650 V), resulting in reduced power dissipation and improved efficiency in rectification applications. The operating temperature range of -40°C to 175°C supports standard industrial and commercial applications.

FFSM0465A (Substitute Selection): The FFSM0465A from onsemi is a direct electrical substitute when the STPSC4H065DLF is unavailable. Both devices are rated for 650 V and 4 A with SiC Schottky technology and zero reverse recovery time. The FFSM0465A is manufactured by onsemi, carries Active product status, and is ROHS3 compliant. The extended operating temperature range (-55°C to 175°C) provides additional thermal margin for low-temperature applications. The higher forward voltage drop (1.75 V at 4 A) and reverse leakage current (200 µA at 650 V) are characteristic of onsemi's SiC Schottky process and remain within acceptable limits for 650 V, 4 A rectifier applications. PCB layout modifications may be required due to differences in package pinout between the 8-PowerVDFN and 4-PowerTSFN configurations.

Frequently Asked Questions (FAQ)

Q: Can the FFSM0465A directly replace the STPSC4H065DLF without PCB modifications?

A: The FFSM0465A and STPSC4H065DLF have identical electrical ratings (650 V, 4 A, SiC Schottky technology) and both are Surface Mount devices with 8x8 mm package dimensions. However, the package designations differ (8-PowerVDFN vs. 4-PowerTSFN), indicating different pinout configurations. PCB layout modifications are required to accommodate the different pin assignments and footprints.

Q: What are the key differences between these two diodes?

A: The primary differences are forward voltage drop (1.55 V vs. 1.75 V at 4 A), reverse leakage current (40 µA vs. 200 µA at 650 V), operating temperature range (-40°C to 175°C vs. -55°C to 175°C), and package configuration (8-PowerVDFN vs. 4-PowerTSFN). Both devices share identical voltage and current ratings, SiC Schottky technology, and zero reverse recovery time.

Q: Are both devices RoHS3 compliant?

A: Yes, both the STPSC4H065DLF and FFSM0465A are ROHS3 compliant and carry Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions.

Q: Which device has better thermal performance?

A: The STPSC4H065DLF exhibits lower forward voltage drop (1.55 V vs. 1.75 V at 4 A), resulting in lower power dissipation and reduced junction temperature rise during operation. The FFSM0465A provides an extended low-temperature operating range (-55°C vs. -40°C minimum).

Q: Can these devices be used interchangeably in high-frequency switching applications?

A: Both devices feature zero reverse recovery time (0 ns) and SiC Schottky technology, making them suitable for high-frequency switching applications. Electrical substitution is valid; however, PCB layout redesign is necessary due to package differences.

Q: What is the significance of the 8x8 mm package dimension?

A: The 8x8 mm dimension refers to the physical footprint of the Surface Mount package. Both the STPSC4H065DLF (8-PowerVDFN) and FFSM0465A (4-PowerTSFN) share this footprint size, but differ in internal pinout and lead configuration, requiring separate PCB designs.