STPSC4H065DI Silicon Carbide Schottky Diode Equivalent & Substitute Parts

Part Overview

The STPSC4H065DI is an active silicon carbide Schottky rectifier diode manufactured by STMicroelectronics, rated for 650 V DC reverse voltage and 4 A average rectified current in a through-hole TO-220AC insulated package. This component is designed for high-efficiency power conversion applications requiring fast switching characteristics and low forward voltage drop. Equivalent and substitute parts are identified to support procurement flexibility, inventory management, and supply chain continuity for applications where the primary part becomes unavailable or where alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	650	V
Current - Average Rectified (Io)	4	A
Voltage - Forward (Vf) (Max) @ If	1.75 @ 4	V @ A
Current - Reverse Leakage @ Vr	40	µA @ 650 V
Technology	SiC (Silicon Carbide) Schottky	—
Package / Case	TO-220-2 Insulated	—
Mounting Type	Through Hole	—
Operating Temperature - Junction	-40 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the STPSC4H065DI is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4 A
Technology: SiC (Silicon Carbide) Schottky
Current - Reverse Leakage @ Vr: 40 µA @ 650 V

Mechanical Equivalence Criteria:

Package / Case: TO-220-2 configuration
Mounting Type: Through Hole
Supplier Device Package: TO-220AC

Compliance Criteria:

RoHS Status: ROHS3 Compliant
REACH Status: REACH Unaffected

The PCDP0465G1_T0_00001 manufactured by Panjit International Inc. meets all specified electrical and mechanical parameters, confirming its status as a direct substitute for the STPSC4H065DI.

Parameter Comparison

Parameter	STPSC4H065DI (STMicroelectronics)	PCDP0465G1_T0_00001 (Panjit International Inc.)	Match Status
Voltage - DC Reverse (Vr) (Max)	650 V	650 V	Equivalent
Current - Average Rectified (Io)	4 A	4 A	Equivalent
Voltage - Forward (Vf) (Max) @ If	1.75 V @ 4 A	1.7 V @ 4 A	Compatible
Current - Reverse Leakage @ Vr	40 µA @ 650 V	40 µA @ 650 V	Equivalent
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky	Equivalent
Package / Case	TO-220-2 Insulated	TO-220-2	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Operating Temperature - Junction	-40 to 175 °C	-55 to 175 °C	Compatible
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
REACH Status	REACH Unaffected	REACH Unaffected	Equivalent

Engineering Selection Recommendations

Primary Part: STPSC4H065DI

The STPSC4H065DI remains the primary specification for applications requiring STMicroelectronics sourcing, established supply agreements, or design validation with this manufacturer's silicon carbide Schottky technology. This part is active, ROHS3 compliant, and REACH unaffected.

Substitute Part: PCDP0465G1_T0_00001

The PCDP0465G1_T0_00001 from Panjit International Inc. is a direct electrical and mechanical equivalent suitable for applications where the primary part is unavailable or where alternative sourcing is required. This part meets all critical electrical specifications, operates across an extended lower temperature range (-55°C minimum versus -40°C), and maintains ROHS3 and REACH compliance. The forward voltage drop is marginally lower (1.7 V versus 1.75 V at 4 A), which represents improved efficiency characteristics. Both parts are active products with confirmed inventory availability.

Frequently Asked Questions (FAQ)

Q: Can the PCDP0465G1_T0_00001 be used as a direct replacement for the STPSC4H065DI in existing designs?

A: Yes. Both parts are silicon carbide Schottky diodes with identical voltage and current ratings (650 V, 4 A), equivalent reverse leakage current (40 µA @ 650 V), and identical TO-220AC through-hole packaging. The PCDP0465G1_T0_00001 exhibits a lower forward voltage drop (1.7 V versus 1.75 V at 4 A), which improves efficiency. Both parts are ROHS3 compliant and REACH unaffected.

Q: Are there any temperature range differences between these parts?

A: The PCDP0465G1_T0_00001 operates from -55°C to 175°C junction temperature, while the STPSC4H065DI operates from -40°C to 175°C. The Panjit part supports a lower minimum temperature, making it suitable for applications requiring extended cold-temperature operation.

Q: Do both parts use the same package configuration?

A: Yes. Both the STPSC4H065DI and PCDP0465G1_T0_00001 use the TO-220-2 through-hole package with TO-220AC supplier device packaging. Pin configuration and mechanical dimensions are compatible for direct board-level substitution.

Q: What is the reverse recovery time specification for these diodes?

A: The STPSC4H065DI specifies fast recovery with switching speed ≤ 500 ns for currents > 200 mA. The PCDP0465G1_T0_00001 specifies zero reverse recovery time (trr = 0 ns), which is characteristic of silicon carbide Schottky technology and indicates superior switching performance.

Q: Are both parts compliant with environmental and regulatory requirements?

A: Yes. Both the STPSC4H065DI and PCDP0465G1_T0_00001 are ROHS3 compliant and REACH unaffected. Both parts carry Moisture Sensitivity Level (MSL) ratings appropriate for standard handling and storage (STPSC4H065DI: MSL 1 Unlimited; PCDP0465G1_T0_00001: Not Applicable).

Q: What is the capacitance specification for these diodes?

A: The STPSC4H065DI does not specify junction capacitance in the provided parameters. The PCDP0465G1_T0_00001 specifies 146 pF @ 1 V, 1 MHz. This parameter does not affect substitution eligibility for standard rectification applications.

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