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STPSC12065D Silicon Carbide Schottky Diode Equivalent & Substitute Parts
Part Overview
The STPSC12065D is an active silicon carbide Schottky rectifier diode manufactured by STMicroelectronics, rated for 650 V DC reverse voltage and 12 A average rectified current in a through-hole TO-220AC package. This diode is part of the ECOPACK®2 series and is designed for high-efficiency power conversion applications requiring fast switching characteristics and minimal reverse recovery time.
Equivalent and substitute parts are identified when design requirements permit component interchange due to matching or superior electrical and mechanical specifications. Substitute parts may originate from alternative manufacturers while maintaining functional compatibility within the specified parameter ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650 | V |
| Current - Average Rectified (Io) | 12 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 | V @ 12 A |
| Reverse Recovery Time (trr) | 0 | ns |
| Current - Reverse Leakage @ Vr | 150 | µA @ 650 V |
| Capacitance @ Vr, F | 750 | pF @ 0V, 1MHz |
| Operating Temperature - Junction | -40 to 175 | °C |
| Mounting Type | Through Hole | - |
| Package / Case | TO-220-2 | - |
| Technology | SiC (Silicon Carbide) Schottky | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of silicon carbide Schottky rectifier diodes is determined by the following critical parameters:
Voltage Rating: All substitute parts must meet or exceed the 650 V DC reverse voltage specification of the STPSC12065D.
Current Rating: Substitute parts must support the 12 A average rectified current requirement. Parts with higher current ratings (such as 35 A) are acceptable as they provide design margin.
Forward Voltage Drop: Forward voltage characteristics at rated current determine power dissipation and thermal performance. Variations in Vf are acceptable within the context of system design requirements.
Reverse Recovery Time: Silicon carbide Schottky technology inherently exhibits zero or negligible reverse recovery time, eliminating this as a differentiating parameter among SiC devices.
Package Compatibility: All substitute parts utilize the TO-220-2 or TO-220AC package format, ensuring mechanical and thermal interface compatibility.
Regulatory Compliance: All parts maintain ROHS3 compliance and REACH unaffected status, meeting environmental and regulatory requirements.
Substitute parts are grouped as parametric equivalents (matching all critical specifications) or similar alternatives (meeting functional requirements with acceptable parameter variations).
Parameter Comparison
| Parameter | STPSC12065D (Main) | STPSC12065DY | PCDP1265G1_T0_00001 | UJ3D06512TS | S3D12065A |
|---|---|---|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics | Panjit International Inc. | Qorvo | SMC Diode Solutions |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 12 A | 12 A | 12 A | 12 A | 35 A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 12 A | 1.45 V @ 12 A | 1.7 V @ 12 A | 1.7 V @ 12 A | 1.7 V @ 12 A |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 150 µA @ 650 V | 50 µA @ 600 V | 80 µA @ 650 V | 80 µA @ 650 V | 16 µA @ 650 V |
| Capacitance @ Vr, F | 750 pF @ 0V, 1MHz | 750 pF @ 0V, 1MHz | 452 pF @ 1V, 1MHz | 392 pF @ 1V, 1MHz | 764 pF @ 0V, 1MHz |
| Operating Temperature - Junction | -40 to 175 °C | -40 to 175 °C | -55 to 175 °C | -55 to 175 °C | -55 to 175 °C |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Technology | SiC Schottky | SiC Schottky | SiC Schottky | SiC Schottky | SiC Schottky |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Active | Active | Active | Active |
Engineering Selection Recommendations
STPSC12065DY (STMicroelectronics): This part is a parametric equivalent to the STPSC12065D, sharing identical voltage, current, and forward voltage specifications. The STPSC12065DY includes automotive-grade qualification (AEC-Q101) and exhibits lower reverse leakage current (50 µA @ 600 V versus 150 µA @ 650 V). Both parts are manufactured by STMicroelectronics within the ECOPACK®2 series and maintain identical operating temperature ranges. Selection of STPSC12065DY is appropriate when automotive qualification or reduced leakage characteristics are required.
PCDP1265G1_T0_00001 (Panjit International Inc.): This part meets the 650 V and 12 A specifications with forward voltage of 1.7 V @ 12 A. The extended operating temperature range (-55 to 175 °C) provides additional thermal margin. Reverse leakage current is 80 µA @ 650 V. This part is suitable for applications where alternative manufacturer sourcing is acceptable and forward voltage variation is tolerable.
UJ3D06512TS (Qorvo): This part matches the 650 V and 12 A ratings with forward voltage of 1.7 V @ 12 A and extended operating temperature range (-55 to 175 °C). Reverse leakage is 80 µA @ 650 V. The lower junction capacitance (392 pF @ 1V, 1MHz) may provide switching performance advantages in high-frequency applications. This part is suitable for designs where Qorvo sourcing is preferred.
S3D12065A (SMC Diode Solutions): This part provides 650 V rating with elevated current capacity of 35 A, offering significant design margin above the 12 A requirement. Forward voltage is 1.7 V @ 12 A. Reverse leakage is substantially lower at 16 µA @ 650 V. The extended operating temperature range (-55 to 175 °C) and higher current rating make this part suitable for applications requiring thermal or current margin, or where SMC Diode Solutions is the preferred supplier.
All substitute parts maintain ROHS3 compliance and active product status, ensuring regulatory conformance and long-term availability.
Frequently Asked Questions (FAQ)
Q: Can STPSC12065DY be used as a direct replacement for STPSC12065D?
A: Yes. STPSC12065DY is a parametric equivalent with identical voltage (650 V), current (12 A), and forward voltage (1.45 V @ 12 A) specifications. Both parts are manufactured by STMicroelectronics in the same package format (TO-220-2). The primary difference is the automotive qualification (AEC-Q101) and lower reverse leakage current of STPSC12065DY.
Q: What is the significance of forward voltage differences among substitute parts?
A: Forward voltage (Vf) determines the voltage drop across the diode during conduction and directly affects power dissipation and thermal performance. STPSC12065D and STPSC12065DY specify 1.45 V @ 12 A, while PCDP1265G1_T0_00001, UJ3D06512TS, and S3D12065A specify 1.7 V @ 12 A. The 0.25 V difference results in increased power dissipation. Substitution is acceptable when thermal design accommodates the higher dissipation or when system requirements permit the variation.
Q: Are all substitute parts compatible with the TO-220AC package footprint?
A: All substitute parts utilize the TO-220-2 package format, which is mechanically and thermally compatible with TO-220AC applications. The TO-220AC and TO-220-2 designations refer to the same physical package with two leads. Thermal interface and mounting characteristics are identical across all listed parts.
Q: What is the advantage of S3D12065A with 35 A current rating?
A: S3D12065A provides a current rating of 35 A compared to the 12 A requirement of STPSC12065D. This higher rating provides design margin for transient current conditions and thermal stress. The part also exhibits lower reverse leakage current (16 µA @ 650 V) compared to the main part (150 µA @ 650 V), reducing standby power dissipation. Selection is appropriate when design margin or reduced leakage is beneficial.
Q: How do reverse leakage current differences affect circuit performance?
A: Reverse leakage current flows when the diode is reverse-biased and contributes to standby power dissipation and circuit quiescent current. STPSC12065D specifies 150 µA @ 650 V, while substitute parts range from 16 µA (S3D12065A) to 80 µA (PCDP1265G1_T0_00001 and UJ3D06512TS). Lower leakage reduces standby power consumption. Substitution is appropriate when leakage variation does not exceed circuit design tolerances.
Q: What is the operating temperature range consideration for substitution?
A: STPSC12065D specifies -40 to 175 °C junction temperature range. Substitute parts PCDP1265G1_T0_00001, UJ3D06512TS, and S3D12065A extend the lower limit to -55 °C. This extended range provides additional thermal margin for cold-start conditions. Substitution is appropriate for applications operating within the specified temperature ranges of either part.
Q: Are all parts RoHS3 compliant?
A: Yes. All listed parts, including the main part STPSC12065D and all substitute parts, maintain ROHS3 compliance and REACH unaffected status. This ensures regulatory conformance for applications subject to environmental and hazardous substance restrictions.
Q: What role does junction capacitance play in diode selection?
A: Junction capacitance affects switching speed and high-frequency performance. STPSC12065D specifies 750 pF @ 0V, 1MHz. Substitute parts range from 392 pF (UJ3D06512TS) to 764 pF (S3D12065A). Lower capacitance generally improves switching performance at high frequencies. Substitution is appropriate when capacitance variation does not degrade circuit switching characteristics or electromagnetic compatibility.
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