STPSA92 Equivalent & Substitute Parts

Part Overview

The STPSA92 is a PNP bipolar junction transistor manufactured by STMicroelectronics, rated for 300 V collector-emitter breakdown voltage and 500 mA maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is rated for 625 mW maximum power dissipation with a transition frequency of 50 MHz. The STPSA92 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Max)	500	mA
Collector-Emitter Breakdown Voltage (Max)	300	V
Power Dissipation (Max)	625	mW
Transition Frequency	50	MHz
Vce Saturation (Max)	500	mV @ 2mA, 20mA
DC Current Gain (hFE Min)	40	@ 30mA, 10V
Mounting Type	Through Hole	—
Package	TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the STPSA92 is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type must be PNP
Collector-emitter breakdown voltage must be greater than or equal to 300 V
Maximum collector current must be greater than or equal to 500 mA
Maximum power dissipation must be greater than or equal to 625 mW
Package must be through-hole compatible with TO-92-3 footprint or mechanically equivalent

Secondary Compatibility Factors:

Vce saturation characteristics
DC current gain (hFE)
Transition frequency
Operating temperature range
RoHS and REACH compliance status

The substitute parts listed below meet the primary substitution criteria and are therefore electrically and mechanically compatible with the STPSA92 in applications where the specified parameters are required.

Parameter Comparison

Parameter	STPSA92 (STMicroelectronics)	2N4403BU (Fairchild)	KSP92BU (Fairchild)	ZTX757 (Diodes Inc.)
Transistor Type	PNP	PNP	PNP	PNP
Ic (Max)	500 mA	600 mA	500 mA	500 mA
Vce Breakdown (Max)	300 V	40 V	300 V	300 V
Power (Max)	625 mW	625 mW	625 mW	1 W
Frequency - Transition	50 MHz	200 MHz	50 MHz	30 MHz
Vce Saturation (Max)	500 mV @ 2mA, 20mA	750 mV @ 50mA, 500mA	500 mV @ 2mA, 20mA	500 mV @ 10mA, 100mA
DC Current Gain (hFE Min)	40 @ 30mA, 10V	100 @ 150mA, 2V	25 @ 30mA, 10V	50 @ 100mA, 5V
Operating Temperature (Max)	150°C	150°C	150°C	200°C
Package	TO-92-3	TO-92-3	TO-92-3	E-Line (TO-92 compatible)
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

KSP92BU (Fairchild Semiconductor) provides the closest electrical match to the STPSA92. This part maintains identical collector-emitter breakdown voltage (300 V), collector current rating (500 mA), power dissipation (625 mW), and transition frequency (50 MHz). The KSP92BU is classified as active product status, ensuring ongoing availability and supply chain continuity. The part is packaged in TO-92-3 configuration with direct footprint compatibility.

ZTX757 (Diodes Incorporated) is a direct functional equivalent with enhanced specifications. This part meets all primary substitution criteria with identical voltage and current ratings. The ZTX757 offers superior power dissipation capability (1 W versus 625 mW) and extended operating temperature range (-55°C to 200°C). The device is RoHS3 compliant and carries active product status. The E-Line package is mechanically compatible with TO-92-3 footprints in through-hole applications.

2N4403BU (Fairchild Semiconductor) is not recommended as a direct substitute. Although this part shares the same PNP type and TO-92-3 package, the collector-emitter breakdown voltage is limited to 40 V, which does not meet the 300 V requirement of the STPSA92. This part is suitable only for applications with reduced voltage specifications.

Frequently Asked Questions (FAQ)

Q: Can the KSP92BU be used as a direct replacement for the STPSA92?

A: Yes. The KSP92BU meets all primary electrical and mechanical substitution criteria. Both devices are rated for 300 V collector-emitter breakdown, 500 mA maximum collector current, 625 mW power dissipation, and 50 MHz transition frequency. Both are packaged in TO-92-3 configuration. The KSP92BU is active product status, providing supply continuity for the obsolete STPSA92.

Q: What is the key difference between the ZTX757 and the STPSA92?

A: The ZTX757 exceeds the STPSA92 specifications in power dissipation (1 W versus 625 mW) and operating temperature range (-55°C to 200°C versus 150°C maximum). Electrical ratings for voltage and current are identical. The ZTX757 uses an E-Line package, which is mechanically compatible with TO-92-3 through-hole footprints.

Q: Why is the 2N4403BU listed as a substitute if it has only 40 V breakdown voltage?

A: The 2N4403BU is listed in the original STPSA92 substitute documentation but does not meet the primary substitution criteria for applications requiring 300 V operation. This part is suitable only for circuits with reduced voltage specifications and should not be selected for direct replacement in 300 V applications.

Q: Are all substitute parts RoHS3 compliant?

A: The KSP92BU and 2N4403BU RoHS compliance status is not specified in the available documentation. The ZTX757 is confirmed RoHS3 compliant. For applications requiring RoHS3 certification, the ZTX757 is the recommended selection.

Q: Can the ZTX757 be used in existing PCB designs without layout modifications?

A: The ZTX757 E-Line package is mechanically compatible with TO-92-3 through-hole footprints. Pin configuration and lead spacing are compatible with standard TO-92-3 land patterns. No PCB layout modifications are required for mechanical substitution.

Q: What is the minimum DC current gain for each substitute part?

A: The STPSA92 specifies 40 hFE minimum at 30 mA collector current and 10 V Vce. The KSP92BU specifies 25 hFE minimum at the same conditions. The ZTX757 specifies 50 hFE minimum at 100 mA collector current and 5 V Vce. The 2N4403BU specifies 100 hFE minimum at 150 mA collector current and 2 V Vce. Gain specifications vary with measurement conditions and must be evaluated for specific circuit requirements.

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